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PD -90718B
IRGMC50F
INSULATED GATE BIPOLAR TRANSISTOR
Features
* * * * * Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses
C
Fast Speed IGBT
VCES = 600V
G E
VCE(on) max = 1.7V
@VGE = 15V, IC = 30A
Description
n-channel
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. The performance of various IGBTs varies greatly with frequency. Note that IR now provides the designer with a speed benchmark (fIc/2, or the "half-current frequency "), as well as an indication of the current handling capability of the device.
TO-254AA
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE PD @ TC = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Lead Temperature Weight
Max.
600 35* 30 210 210 20 150 60 -55 to + 150 300 (0.063in./1.6mm from case for 10s) 9.3 (typical)
Units
V A
V W
C g
*Current is limited by pin diameter
Thermal Resistance
Parameter
R thJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 0.83 0.21 -- -- 48
C/W
Test Conditions
For footnotes refer to the last page
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IRGMC50F
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES V(BR)ECS Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 --- Emitter-to-Collector Breakdown Voltage 15 --- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage --- 0.62 --- --- VCE(ON) Collector-to-Emitter Saturation Voltage --- 2.0 --- 1.7 VGE(th) Gate Threshold Voltage 3.0 --- VGE(th)/TJ Temperature Coeff. of Threshold Voltage --- -14 gfe Forward Transconductance T 21 --- --- --- ICES Zero Gate Voltage Collector Current --- --- IGES Gate-to-Emitter Leakage Current --- --- Max. Units Conditions --- V VGE = 0V, IC = 1.0 mA --- V VGE = 0V, IC = 1.0 A --- V/C VGE = 0V, IC = 1.0 mA VGE = 15V 1.7 IC = 30A --- IC = 35A See Fig.5 V --- IC = 30A , TJ = 125C 5.5 VCE = VGE, IC = 250 A --- mV/C VCE = VGE, IC = 250 A --- S VCE 15V, IC = 30A 50 VGE = 0V, VCE = 480V A 2000 VGE = 0V, VCE = 480V, TJ = 125C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LC+LE Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Total Inductance Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Max. Units Conditions 140 IC = 30A 35 nC VCC = 300V See Fig. 8 70 VGE = 15V 48 IC = 30A, VCC = 480V 100 VGE = 15V, RG = 2.35 ns 540 Energy losses include "tail" 360 See Fig. 9, 10 & 13 --- mJ --- 10 --- TJ = 125C --- IC = 30A, VCC = 480V ns --- VGE = 15V, RG = 2.35 --- Energy losses include "tail" --- mJ See Fig. 11, 13 --- nH Measured from Collector lead (6mm/ 0.25in. from package) to Emitter lead (6mm / 0.25in. from package) --- 3000 --- VGE = 0V --- 340 --- pF VCC = 30V See Fig. 7 --- 40 --- = 1.0MHz Typ. 120 15 35 --- --- --- --- 0.2 5.8 6.0 25 49 440 410 10 6.8
Cies Coes Cres
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Note: Corresponding Spice and Saber models are available on the Website. For footnotes refer to the last page
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IRGMC50F
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRGMC50F
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRGMC50F
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRGMC50F
125C
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
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IRGMC50F
L 50V 1 00 0V VC *
D .U .T.
RL = 0 - 480V 480V 4 X IC@25C
480F 960V R
Q
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id.
Fig. 12a - Clamped Inductive
Load Test Circuit
Fig. 12b - Pulsed Collector
Current Test Circuit
IC L D river* 50V 1000V Q R S
* Driver same type as D.U.T., VC = 480V
D .U .T. VC
Fig. 13a - Switching Loss
Test Circuit
Q
R
9 0%
S
1 0% 90 %
VC
t d (o ff)
Fig. 13b - Switching Loss
Waveforms
10 % IC 5% t d (o n )
tr E on E ts = ( Eo n +E o ff )
tf t=5 s E o ff
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IRGMC50F
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot.
R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 10
Case Outline and Dimensions -- TO-254AA
0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]
3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] 0.12 [.005]
17.40 [.685] 16.89 [.665] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B
22.73 [.895] 21.21 [.835]
17.40 [.685] 16.89 [.665] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B R 1.52 [.060]
C
17.40 [.685] 16.89 [.665]
0.84 [.033] MAX.
4.82 [.190] 3.81 [.150] 3.81 [.150]
4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B A
3X 3.81 [.150] 2X
1.14 [.045] 0.89 [.035] 0.36 [.014] BA
3.81 [.150]
2X
NOTE S : 1. 2. 3. 4. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. CONT ROLLING DIMENS ION: INCH. CONF ORMS T O JEDEC OUT LINE T O-254AA. LEGEND 1 = COLLECTOR 2 = EMITTER 3 = GATE
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02
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