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| N-Channel Depletion-Mode 4-Channel DMOS FET Array CORPORATION SD5501 FEATURES DESCRIPTION The SD5501 is manufactured utilizing Calogic's proprietary high speed, low capacitance DMOS process featuring an N-Channel depletion-mode design. This "normally-ON" device is well suited for high speed instrumentation and communication systems where multiple channels are required for fast switching or dual amplification. Available in a 16-pin plastic dual in-line plastic package or chip form. ORDERING INFORMATION Part SD5501N XSD5501 Package Plastic Sorted Chips in Carriers Temperature Range -55oC to +125oC -55oC to +125oC * Normally ON Configuration * Low Interelectrode Capacitances * High-Speed Switching * Wide Dynamic Range * High-Speed Analog Switches * Wide-Band Dual Differential Amplifiers * Dual Cascode Amplifiers Balanced Mixers * High Intercept Point Double APPLICATIONS PIN CONFIGURATION SCHEMATIC DIAGRAM 3 3 4 1 D G S D1 BODY G1 S1 S2 G2 N/C 1 2 3 4 5 6 7 8 TOP VIEW 16 D4 1 4 15 N/C 14 G4 13 S4 12 S3 11 G3 10 N/C 9 D3 6 8 5 6 8 D G S 5 11 9 12 11 9 D G S 12 14 16 13 14 16 D G S CD2 D2 13 2 BODY SD5501 CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = +25oC unless otherwise noted) VDS VSD VDB VSB VGS VGB VGD ID Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . +30 Vdc Source-Drain Voltage. . . . . . . . . . . . . . . . . . . . +0.5 Vdc Drain-Body Voltage . . . . . . . . . . . . . . . . . . . . . . +30 Vdc Source-Body Voltage . . . . . . . . . . . . . . . . . . . . . +15 Vdc Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . +25 Vdc Gate-Body Voltage. . . . . . . . . . . . . . . . . . . . . . . +25 Vdc Gate-Body Voltage. . . . . . . . . . . . . . . . . . . . . . -0.3 Vdc Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . +25 Vdc Continuous Drain Current . . . . . . . . . . . . . . . . . . 50 mA PD PD Tj TS Total Package Power Dissipation (at or below TA = +25oC) . . . . . . . . . . . . . . . . . 640 mW Linear Derating Factor . . . . . . . . . . . . . . . . 10.7 mW/oC Single Device Power Dissipation (at or below TA = +25oC) . . . . . . . . . . . . . . . . . 300 mW Linear Derating Factor . . . . . . . . . . . . . . . . . 5.0 mW/oC Operating Junction Temperature Range . . -55 to +85oC Storage Temperature Range . . . . . . . . . -55 to + 150oC ELECTRICAL CHARACTERISTCIS (TA = +25oC unless otherwise noted) SYMBOL STATIC BVDS BVSD BVDB BVSB IGSS(fwd) IG VGS (off) VGS (on) IDSX rDS (ON) DYNAMIC gfs gos Ciss Coss Crss C(gs + sb) MATCHING VGSM rDS(on) IDXSM gfsm Gate Source Voltage Match Drain-Source On Resistance Match Zero Gate Voltage Drain Current Match Transconductance Match (1), (2) 50 10% 10% 10% mV VDG = 10V, ID = 5.0mA, VBS = -5.6V ID = 1.0 mA, VGS = 0, VBS = 5.6V VDG = 10V, ID = 5.0 mA, VBS = -5.6V Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Output Capacitance Common-Source Reverse Transfer Capacitance Source Node Capacitance (1) CHARACTERISTIC MIN TYP MAX UNITS TEST CONDITIONS Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Drain-Body Breakdown Voltage Source-Body Breakdown Voltage Forward Gate Leakage Current Gate Operating Current Gate - Source Cutoff Voltage Gate-Source On Voltage Zero Gate Voltage Drain Current Drain-Source On Resistance 20 10 25 15 1.0 -3.0 -0.7 -1.0 -0.3 7.0 5.0 100 150 ohms -100 -10 -5.0 -3.0 40 mA nA pA nA V V ID = 10 nA, VGS = VBS = -5.6V IS = 10 nA, VGD = VBD = -5.6V ID = 10nA, VGB = 0, Source Open IS = 10A, VGB = 0, Drain Open VGS = 25V, VDS = VBS = 0 VDG = 15V, ID = 5.0 mA, VBS = -5.6V TA = +125oC VDS = 10V, ID = 1.0A, VBS = 5.6V VDG = 10V, ID = 5mA, VSB = -5.6V VDS = 10V, VGS = 0, VBS = -5.6V TA = +125oC ID = 1.0mA, VGS = 0, VBS = -5.6V 6.0 7.5 200 3.5 1.2 0.3 4.5 12 350 mS S VDG = 10V ID = 5.0mA VBS = -5.6V f = 1 KHz pF f = 1 MHz f = 1 KHz Note 1: Pulse Test, 80 sec, 1% Duty Cycle Note 2: Match of 4 channels |
Price & Availability of SD5501
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