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| Datasheet File OCR Text: |
| MM8006 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI MM8006 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO-72 MAXIMUM RATINGS IC VCBO PDISS TJ TSTG 50 mA 15 V 600 mW @ TC = 25 C -65 C to +200 C -65 C to +200 C 1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE CHARACTERISTICS SYMBOL BVCEO BVCBO ICBO BVEBO hFE VCE(SAT) VBE(SAT) ft Cob Cib NF Gpe Pout TC = 25 C NONE TEST CONDITIONS IC = 3.0 mA IC = 1.0 A VCB = 15 V VCB = 15 V IE = 10 A VCE = 1.0 V IC = 10 mA IC = 10 mA VCE = 10 V VCB = 0 V VCB = 10 V VEB = 0.5 V VCE = 6.0 V VCB = 12 V VCB = 15 V IC = 1.0 mA IC = 6.0 mA IC = 8.0 mA IC = 1.0 mA IB = 1.0 mA IB = 1.0 mA IC = 4.0 mA f = 100 MHz f = 140 KHz f = 140 KHz f = 140 KHz f = 60 MHz f = 200 MHz f = 500 MHz TA = 150 C MINIMUM TYPICAL MAXIMUM 10 15 0.01 1.0 3.0 25 0.4 1.0 1000 3.0 1.7 2.0 6.0 15 30 25 UNITS V V A V --V V MHz pF pF dB dB mW % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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