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| MITSUBISHI TRANSISTOR MODULES QM50HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50HA-HB * * * * * IC Collector current .......................... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 53.5 430.2 88 B E C R6 B 5.3 36.5 18 14 5.3 C E 3-M4 33 3.5 3.5 24MAX. LABEL 4.5 22 7 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 50 50 310 3 500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M4 2500 0.98~1.47 10~15 1.47~1.96 15~20 0.98~1.47 10~15 90 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M5 B(E) terminal screw M4 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V, Collector open IC=50A, IB=67mA IC=-50A (diode forward voltage) IC=50A, VCE=2.5V Min. -- -- -- -- -- -- 750 -- VCC=300V, IC=50A, IB1=100mA, -IB2=1.0A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 80 2.5 3.0 1.8 -- 2.0 8.0 3.0 0.4 1.3 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 Tj=25C 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 0 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) VCE=5.0V COLLECTOR CURRENT IC (A) IB=150mA 80 IB=100mA IB=50mA IB=20mA 40 IB=10mA 60 DC CURRENT GAIN hFE VCE=2.5V 20 Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 VCE=2.5V 7 Tj=25C 5 4 3 2 10 -1 7 5 4 3 2 10 -2 2.2 2.6 3.0 3.4 3.8 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE 4.2 10 0 VCE(sat) 7 5 4 3 IB=67mA 2 Tj=25C Tj=125C -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 Tj=25C Tj=125C 10 1 7 5 4 3 2 10 0 7 5 4 3 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 3 IC=50A IC=25A 1 IC=10A ts 2 SWITCHING TIME tf ton Tj=25C Tj=125C 2 3 4 5 7 10 1 VCC=300V IB1=100mA IB2=-1.0A 2 3 4 5 7 10 2 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 10 -1 10 0 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA COLLECTOR CURRENT IC (A) 10 1 7 5 4 3 2 160 ts tf 140 120 100 80 60 40 20 0 0 Tj=125C ts, tf (s) SWITCHING TIME IB2=-1.5A IB2=-3.5A 10 0 7 5 4 VCC=300V 3 IB1=100mA IC=50A 2 Tj=25C Tj=125C 10 -1 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 100 200 300 400 500 600 700 800 VCE (V) BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) 10 1 7 5 3 2 DC 1ms 10ms DERATING FACTOR (%) 10 2 7 5 3 2 100s 500s 100 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 TC (C) SECOND BREAKDOWN AREA COLLECTOR DISSIPATION 10 0 7 5 3 2 TC=25C NON-REPETITIVE 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 710 1 2 3 5 7 10 2 0.5 0.4 Zth (j-c) (C/ W) 0.3 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 0.2 0.1 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) Tj=25C Tj=125C 0.6 1.0 1.4 1.8 2.2 0.2 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 500 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 10 2 400 200 Qrr 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Tj=25C Tj=125C 10 -1 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 10 0 7 5 3 2 VCC=300V IB1=100mA IB2=-1.0A 10 0 trr CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 2 3 5 7 2.0 1.6 Zth (j-c) (C/ W) 1.2 0.8 0.4 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) Feb.1999 trr (s) 300 Irr (A), Qrr (c) 10 1 7 5 3 2 Irr 10 1 |
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