 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SD1609 160 160 5 100 1.25 150 -45 to +150 2SD1610 200 200 5 100 1.25 150 -45 to +150 Unit V V V mA W C C 2SD1609, 2SD1610 Electrical Characteristics (Ta = 25C) 2SD1609 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2SD1610 Max -- -- -- 10 -- 320 -- 1.5 2 -- -- Min 200 200 5 -- -- 60 30 -- -- -- -- Typ -- -- -- -- -- -- -- -- -- 140 3.8 Max -- -- -- -- 10 320 -- 1.5 2 -- -- V V MHz pF Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 140 V, IE = 0 VCB = 160 V, IE = 0 VCE = 5 V, IC = 10 mA VCE = 5 V, IC = 1 mA VCE = 5 V, IC = 10 mA I C = 30 mA, IB = 3 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Min 160 160 5 -- -- Typ -- -- -- -- -- -- -- -- -- 140 3.8 DC current tarnsfer ratio hFE1* hFE2 Base to emitter voltage VBE Collector to emitter saturation voltage 60 30 -- -- -- -- VCE(sat) Gain bandwidth product f T Collector output capacitance Note: B 60 to 120 Cob 1. The 2SD1609 and 2SD1610 are grouped by h FE1 as follows. C 100 to 200 D 160 to 320 Maximum Collector Dissipation Curve 1.5 Collector power dissipation PC (W) 20 Collector current IC (mA) Typical Output Characteristics 16 1.0 12 8 0.5 4 120 110 100 90 80 70 60 50 40 30 20 10 A IB = 0 2 4 6 8 10 Collector to emitter voltage VCE (V) 0 50 100 Ambient temperature Ta (C) 150 0 2 2SD1609, 2SD1610 DC Current Transfer Ratio vs. Collector Current 500 VCE = 5 V Collector current IC (mA) 50 DC current transfer ratio hFE 200 Ta = 75C 100 25 50 -25 VCE = 5 V Pulse Typical Transfer Characteristics 100 20 10 5 Ta = 7 5C 25 -25 20 10 5 2 1 0 0.2 0.6 0.8 0.4 Base to emitter voltage VBE (V) 1.0 1 2 5 10 20 50 Collector current IC (mA) 100 Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) 5 Gain bandwidth product fT (MHz) IC = 10 IB Pulse VBE(sat) Ta = -25C 75 Gain Bandwidth Product vs. Collector Current 500 VCE = 10 V 200 100 50 2 1.0 0.5 25 75 25 0.2 0.1 VCE(sat) 20 10 5 0.5 Ta = - 1 2 25C 100 0.05 5 20 50 10 Collector current IC (mA) 1.0 2 5 10 20 Collector current IC (mA) 50 3 2SD1609, 2SD1610 Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) 50 f = 1 MHz IE = 0 20 10 5 2 1.0 0.5 1 20 50 100 2 5 10 Collector to base voltage VCB (V) 4 Unit: mm 8.0 0.5 0 12 3.1 +0.15 -0.1 3.7 0.7 11.0 0.5 2.7 0.4 12 0 2.3 0.3 120 1.1 15.6 0.5 0.8 2.29 0.5 2.29 0.5 0.55 1.2 Hitachi Code JEDEC EIAJ Weight (reference value) TO-126 Mod -- -- 0.67 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
Price & Availability of 2SD1609
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |