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0.5 CMOS 1.65 V to 3.6 V Dual SPDT/2:1 MUX ADG836L FEATURES 0.5 typical on resistance 0.8 maximum on resistance at 125C 1.65 V to 3.6 V operation Automotive temperature range: -40C to +125C Guaranteed leakage specifications up to 125C High current carrying capability: 300 mA continuous Rail-to-rail switching operation Fast switching times <20 ns Typical power consumption: <0.1 W FUNCTIONAL BLOCK DIAGRAM ADG836L S1A D1 S1B IN1 IN2 S2A D2 S2B 04753-0-001 APPLICATIONS Cellular phones PDAs MP3 players Power routing Battery-powered systems PCMCIA cards Modems Audio and video signal routing Communication systems SWITCHES SHOWN FOR A LOGIC 1 INPUT Figure 1. GENERAL DESCRIPTION The ADG836L is a low voltage CMOS device containing two independently selectable single-pole, double-throw (SPDT) switches. This device offers ultralow on resistance of less than 0.8 over the full temperature range. The ADG836L is fully specified for 3.3 V, 2.5 V, and 1.8 V supply operation. Each switch conducts equally well in both directions when on and has an input signal range that extends to the supplies. The ADG836L exhibits break-before-make switching action. The ADG836L is available in a 10-lead package. PRODUCT HIGHLIGHTS 1. 2. 3. 4. 5. 6. Less than 0.8 over full temperature range of -40C to +125C. Single 1.65 V to 3.6 V operation. Compatible with 1.8 V CMOS logic. High current handling capability (300 mA continuous current at 3.3 V). Low THD + N (0.02% typ). Small 10-lead MSOP package. Rev. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 (c) 2004 Analog Devices, Inc. All rights reserved. ADG836L TABLE OF CONTENTS Specifications..................................................................................... 3 Absolute Maximum Ratings............................................................ 6 Truth Table ........................................................................................ 6 Pin Terminology ............................................................................... 7 Typical Performance Characteristics ............................................. 8 Test Circuits..................................................................................... 11 Outline Dimensions ....................................................................... 13 Ordering Guide........................................................................... 14 REVISION HISTORY 5/04--Data Sheet Changed from Rev. 0 to Rev. A Updated Ordering Guide............................................................... 14 4/04--Revision 0: Initial Version Rev. A | Page 2 of 16 ADG836L SPECIFICATIONS Table 1. VDD = 2.7 V to 3.6 V, GND = 0 V, unless otherwise noted.1 Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match between Channels (RON) On Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS Source Off Leakage IS (OFF) Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current, IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS2 tON tOFF Break-before-Make Time Delay (tBBM) Charge Injection Off Isolation Channel-to-Channel Crosstalk +25C -40C - +85C -40C - +125C 0 V to VDD 0.5 0.65 0.04 0.1 0.15 0.2 1 0.2 1 0.16 0.75 0.075 0.8 0.08 Unit V typ max typ max typ max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ dB typ % dB typ MHz typ pF typ pF typ A typ A max Test Conditions/Comments VDD = 2.7 V VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA (Figure 18) VDD = 2.7 V, VS = 0.65 V, IS = 10 mA VDD = 2.7 V, VS = 0 V to VDD, IS = 10 mA VDD = 3.6 V VS = 0.6 V/3.3 V, VD = 3.3 V/0.6 V (Figure 19) VS = VD = 0.6 V or 3.3 V (Figure 20) 10 15 100 120 2 0.8 0.005 0.1 4 21 26 4 7 17 VIN = VINL or VINH 28 8 29 9 RL = 50 , CL = 35 pF VS = 1.5 V/0 V (Figure 21) RL = 50 , CL = 35 pF VS = 1.5 V (Figure 21) RL = 50 , CL = 35 pF VS1 = VS2 = 1.5 V (Figure 22) VS = 1.5 V, RS = 0 , CL = 1 nF (Figure 23) RL = 50 , CL = 5 pF, f = 100 kHz (Figure 24) S1A-S2A/S1B-S2B (Figure 27) RL = 50 , CL = 5 pF, f = 100 kHz S1A-S1B/S2A-S2B (Figure 26) RL = 50 , CL = 5 pF, f = 100 kHz RL = 32 , f = 20 Hz to 20 kHz, VS = 2 V p-p RL = 50 , CL = 5 pF (Figure 25) RL = 50 , CL = 5 pF (Figure 25) 5 40 -67 -90 -67 Total Harmonic Distortion (THD + N) Insertion Loss -3 dB Bandwidth CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 0.02 -0.05 57 25 75 0.003 1 Temperature range for Y version is -40C to +125C. Guaranteed by design, not subject to production test. VDD = 3.6 V Digital inputs = 0 V or 3.6 V 4 1 2 Rev. A | Page 3 of 16 ADG836L Table 2. VDD = 2.5 V 0.2 V, GND = 0 V, unless otherwise noted.1 Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match between Channels (RON) On Resistance Flatness (RFLAT (ON)) LEAKAGE CURRENTS Source Off Leakage IS (OFF) Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS2 tON tOFF Break-before-Make Time Delay (tBBM) Charge Injection Off Isolation Channel-to-Channel Crosstalk +25C -40C - +85C -40C - +125C 0 V to VDD 0.65 0.72 0.04 0.16 0.23 0.2 0.4 0.2 0.6 0.24 0.8 0.08 0.88 0.085 Unit V typ max typ max typ max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ dB typ % dB typ MHz typ pF typ pF typ A typ A max VIN = VINL or VINH Test Conditions/Comments VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA (Figure 18) VDD = 2.3 V, VS = 0.7 V, IS = 10 mA VDD = 2.3 V, VS = 0 V to VDD, IS = 10 mA VDD = 2.7 V VS = 0.6 V/2.4 V, VD = 2.4 V/0.6 V (Figure 19) VS = VD = 0.6 V or 2.4 V (Figure 20) 4 12 45 90 1.7 0.7 0.005 0.1 4 23 29 5 7 17 30 8 31 9 RL = 50 , CL = 35 pF VS = 1.5 V/0 V (Figure 21) RL = 50 , CL = 35 pF VS = 1.5 V (Figure 21) RL = 50 , CL = 35 pF VS1 = VS2 = 1.5 V (Figure 22) VS = 1.25 V, RS = 0 , CL = 1 nF (Figure 23) RL = 50 , CL = 5 pF, f = 100 kHz (Figure 24) S1A-S2A/S1B-S2B; RL = 50 V, CL = 5 pF, f = 100 kHz;Figure 27 S1A-S1B/S2A-S2B; RL = 50 , CL = 5 pF, f = 100 kHz Figure 25 RL = 32 , f = 20 Hz to 20 kHz, VS = 1.5 V p-p RL = 50 , CL = 5 pF (Figure 25) RL = 50 , CL = 5 pF (Figure 25) 5 30 -67 -90 -67 Total Harmonic Distortion (THD + N) Insertion Loss -3 dB Bandwidth CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 0.022 -0.06 57 25 75 0.003 1 Temperature range for Y version is -40C to +125C. Guaranteed by design, not subject to production test. VDD = 2.7 V Digital inputs = 0 V or 2.7 V 4 1 2 Rev. A | Page 4 of 16 ADG836L Table 3. VDD = 1.65 V 1.95 V, GND = 0 V, unless otherwise noted.1 Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) +25C -40C - +85C -40C - +125C 0 V to VDD 1 1.4 2 0.1 2.2 4 2.2 4 Unit V typ max typ typ Test Conditions/Comments On Resistance Match between Channels (RON) LEAKAGE CURRENTS Source Off Leakage IS (OFF) Channel On Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS2 tON tOFF Break-before-Make Time Delay (tBBM) Charge Injection Off Isolation Channel-to-Channel Crosstalk VDD = 1.8 V, VS = 0 V to VDD, IS = 10 mA (Figure 18) VDD = 1.65 V, VS = 0 V to VDD, IS = 10 mA VDD = 1.65 V, VS = 0.7 V, IS = 10 mA VDD = 1.95 V VS = 0.6 V/1.65 V, VD = 1.65 V/0.6 V (Figure 19) VS = VD = 0.6 V or 1.65 V Figure 20 0.2 0.4 0.2 0.6 4 10 25 75 0.65 VDD 0.35 VDD nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min pC typ dB typ dB typ 0.005 0.1 4 28 37 7 9 21 VIN = VINL or VINH 38 10 39 11 RL = 50 , CL = 35 pF VS = 1.5 /0 V (Figure 21) RL = 50 , CL = 35 pF VS = 1.5 V (Figure 21) RL = 50 , CL = 35 pF VS1 = VS2 = 1 V (Figure 22) VS = 1 V, RS = 0 V, CL = 1 nF (Figure 23) RL = 50 , CL = 5 pF, f = 100 kHz, (Figure 24) S1A-S2A/S1B-S2B; RL = 50 , CL = 5 pF, f = 100 kHz (Figure 27) S1A-S1B/S2A-S2B; RL = 50 , CL = 5 pF, f = 100 kHz (Figure 25) RL = 32 , f = 20 Hz to 20 kHz, VS = 1.2 V p-p RL = 50 , CL = 5 pF (Figure 25) RL = 50 , CL = 5 pF (Figure 25) 5 20 -67 -90 -67 dB typ Total Harmonic Distortion (THD + N) Insertion Loss -3 dB Bandwidth CS (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 0.14 -0.08 57 25 75 0.003 1.0 4 % dB typ MHz typ pF typ pF typ A typ A max VDD = 1.95 V Digital inputs = 0 V or 1.95 V 1 2 Temperature range for Y version is -40C to +125C. Guaranteed by design, not subject to production test. Rev. A | Page 5 of 16 ADG836L ABSOLUTE MAXIMUM RATINGS TA = 25C, unless otherwise noted. Table 4. Parameter VDD to GND Analog Inputs1 Digital Inputs1 Peak Current, S or D 3.3 V Operation 2.5 V Operation 1.8 V Operation Continuous Current, S or D 3.3 V Operation 2.5 V Operation 1.8 V Operation Operating Temperature Range Automotive (Y Version) Storage Temperature Range Junction Temperature MSOP Package JA Thermal Impedance JC Thermal Impedance IR Reflow, Peak Temperature <20 sec Rating -0.3 V to +4.6 V -0.3 V to VDD + 0.3 V -0.3 V to 4.6 V or 10 mA, whichever occurs first 500 mA 460 mA 420 mA (pulsed at 1 ms, 10% Duty Cycle Max) 300 mA 275 mA 250 mA -40C to +125C -65C to +150C 150C 206C/W 44C/W 235C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. TRUTH TABLE Table 5. Logic 0 1 Switch A Off On Switch B On Off 1 Overvoltages at IN, S, or D are clamped by internal diodes. Current should be limited to the maximum ratings given. ESD CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. Rev. A | Page 6 of 6 ADG836L PIN TERMINOLOGY IN1 1 S1A 2 10 D1 9 S1B TOP VIEW GND 3 (Not to Scale) 8 VDD S2A 4 IN2 5 7 S2B 6 D2 04753-0-002 ADG836L Figure 2. 10-Lead MSOP (RM-10) Table 6. Mnemonic VDD IDD GND S D IN VD (VS) RON RFLAT (ON) RON IS (OFF) ID (OFF) ID, IS (ON) VINL VINH IINL (IINH) CS (OFF) CD (OFF) CD, CS (ON) CIN tON tOFF tBBM Charge Injection Off Isolation Crosstalk -3 dB Bandwidth On Response Insertion Loss THD + N Description Most positive power supply potential. Positive supply current. Ground (0 V) reference. Source terminal. May be an input or output. Drain terminal. May be an input or output. Logic control input. Analog voltage on terminals D and S. Ohmic resistance between terminals D and S. Flatness is defined as the difference between the maximum and minimum value of on resistance as measured On resistance match between any two channels. Source leakage current with the switch off. Drain leakage current with the switch off. Channel leakage current with the switch on. Maximum input voltage for Logic 0. Minimum input voltage for Logic 1. Input current of the digital input. Off switch source capacitance. Measured with reference to ground. Off switch drain capacitance. Measured with reference to ground. On switch capacitance. Measured with reference to ground. Digital input capacitance. Delay time between the 50% and the 90% points of the digital input and switch on condition. Delay time between the 50% and the 90% points of the digital input and switch off condition. On or off time measured between the 80% points of both switches when switching from one to another. A measure of the glitch impulse transferred from the digital input to the analog output during on-off switching. A measure of unwanted signal coupling through an off switch. A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. The frequency at which the output is attenuated by 3 dB. The frequency response of the on switch. The loss due to the on resistance of the switch. The ratio of the harmonic amplitudes plus noise of a signal, to the fundamental. Rev. A | Page 7 of 16 ADG836L TYPICAL PERFORMANCE CHARACTERISTICS 0.60 TA = 25C 0.55 VDD = 3V 0.50 ON RESISTANCE () ON RESISTANCE () 0.8 +125C +85C 1.2 VDD = 3.3V VDD = 2.7V 1.0 0.45 0.40 VDD = 3.6V 0.35 0.30 0.25 0.20 0 0.5 1.0 1.5 2.0 VD, VS (V) 2.5 3.0 3.5 04449-0-004 0.6 VDD = 3.3V 0.4 +25C -40C 04449-0-007 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VD, VS (V) Figure 3. On Resistance vs. VD (VS), VDD = 2.7 V to 3.6 V 0.8 TA = 25C 0.7 VDD = 2.3V ON RESISTANCE () 1.0 1.2 Figure 6. On Resistance vs. VD (VS) for Different Temperature, VDD = 3.3 V VDD = 2.5V ON RESISTANCE () +125C 0.8 +85C 0.6 +25C -40C 0.6 0.5 VDD = 2.5V VDD = 2.7V 0.4 0.4 0.2 0 0.5 1.0 1.5 VD, VS (V) 2.0 2.5 04449-0-005 0 0 0.5 1.0 1.5 VD, VS (V) 2.0 2.5 Figure 4. On Resistance vs. VD (VS), VDD = 2.5 V 0.2 V 1.8 TA = 25C 1.6 1.4 VDD = 1.65V 1.2 1.4 Figure 7. On Resistance vs. VD (VS) for Different Temperature, VDD = 2.5 V VDD = 1.8V +25C +125C -40C ON RESISTANCE () 1.2 VDD = 1.8V 1.0 0.8 0.6 VDD = 1.95V 0.4 0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VD, VS (V) 04449-0-006 ON RESISTANCE () 1.0 0.8 0.7 0.5 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VD, VS (V) +85C 1.8 Figure 5. On Resistance vs. VD (VS), VDD = 1.8 V to 0.15 V Figure 8. On Resistance vs. VD (VS) for Different Temperature, VDD = 1.8 V Rev. A | Page 8 of 16 04449-0-009 04449-0-008 0.3 0.2 ADG836L 80 VDD = 3.3V 60 ID, IS (ON) 40 90 80 70 60 20 TA = 25C CURRENT (nA) QINJ (pC) 50 40 VCC = 3.3V 30 20 VCC = 2.5V VCC = 1.8V 04449-0-013 0 -20 IS (OFF) -40 -60 -80 0 20 40 60 80 100 120 TEMPERATURE (C) 04449-0-010 10 0 0 0.5 1.0 1.5 VS (V) 2.0 2.5 3.0 3.5 Figure 9. Leakage Current vs. Temperature, VDD = 3.3 V Figure 12. Charge Injection vs. Source Voltage 60 VDD = 2.5V 50 35 30 40 30 tON VDD = 1.8V 25 ID, IS (ON) CURRENT (nA) VDD = 2.5V VDD = 3V TIME (ns) 20 10 0 -10 -20 -30 -40 0 20 40 60 80 100 120 TEMPERATURE (C) IS (OFF) 04449-0-011 20 15 10 VDD = 2.5V tOFF 5 VDD = 1.8V VDD = 3V 04449-0-014 0 -40 20 0 20 40 60 80 100 120 TEMPERATURE (C) Figure 10. Leakage Current vs. Temperature, VDD = 2.5 V Figure 13. tON/tOFF Times vs. Temperature 50 VDD = 1.8V 40 1 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 04449-0-012 ATTENUATION (dB) 30 CURRENT (nA) IS, ID (ON) 20 TA = 25C VCC = 3.3V/2.5V/1.8V 10 0 IS (OFF) -10 -12 -13 0.01 0.1 1 10 100 -20 0 20 40 60 80 100 120 1000 TEMPERATURE (C) FREQUENCY (MHz) Figure 11. Leakage Current vs. Temperature, VDD = 1.8 V Figure 14. Bandwidth Rev. A | Page 9 of 16 04449-0-015 -11 ADG836L 0 -10 -20 0.10 VDD = 2.5V TA = 25C S1A-D1 32V LOAD 0.08 1.5V p-p TA = 25C VCC = 3.3V/2.5V/1.8V ATTENUATION (dB) THD + N (%) -30 -40 -50 -60 0.06 0.04 0.02 -70 -80 0.01 04449-0-016 0.1 1 10 100 1000 0 20 50 100 200 500 1k 2k 5k 10k 20k FREQUENCY (MHz) FREQUENCY (Hz) Figure 15. Off Isolation vs. Frequency Figure 17. Total Harmonic Distortion + Noise -10 S1A-S1B -20 -30 TA = 25C VCC = 3.3V/2.5V/1.8V S1A-S2A -50 -60 -70 -80 -90 -100 0.01 04449-0-017 ATTENUATION (dB) -40 0.1 1 10 100 1000 FREQUENCY (MHz) Figure 16. Crosstalk vs. Frequency Rev. A | Page 10 of 16 04449-0-018 ADG836L TEST CIRCUITS IDS V1 IS (OFF) S D 04449-0-019 ID (OFF) S D A 04449-0-020 A VS ID (ON) NC A VD 04449-0-021 S D VS RON = V1/IDS VD Figure 18. On Resistance Figure 19. Off Leakage Figure 20. On Leakage VDD 0.1F VDD VS S1B S1A D RL 50 GND VOUT CL 35pF VOUT VIN 50% 50% IN 90% 90% 04449-0-022 tON tOFF Figure 21. Switching Times, tON, tOFF VDD 0.1F 50% VDD VS S1B S1A D RL IN GND 50 VOUT CL 35pF VIN VOUT 80% 80% 0V 50% tBBM tBBM 04449-0-023 Figure 22. Break-before-Make Time Delay, tBBM VDD SW ON S1B VS IN GND D S1A 1nF VOUT VOUT QINJ = CL x VOUT 04449-0-024 SW OFF VIN NC VOUT Figure 23. Charge Injection Rev. A | Page 11 of 16 ADG836L VDD 0.1F NETWORK ANALYZER VOUT VDD 0.1F VDD VDD S1A RL 50 S1B 50 04449-0-025 NC S1B D S1A 50 50 VS VOUT D RL 50 RL 50 GND VS GND OFF ISOLATION = 20 LOG VOUT VS CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG VOUT VS Figure 24. Off Isolation Figure 25. Channel-to-Channel Crosstalk (S1A-S1B) VDD 0.1F NETWORK ANALYZER 50 VS D 04449-0-026 VDD NETWORK ANALYZER VOUT 50 S2A S2B S1A S1B D2 S1B S1A GND RL 50 VOUT D1 NC 50 50 VS 04449-0-027 NC INSERTION LOSS = 20 LOG VOUT WITH SWITCH VOUT WITHOUT SWITCH CHANNEL-TO-CHANNEL CROSSTALK = 20 LOG VOUT VS Figure 26. Bandwidth Figure 27. Channel-to-Channel Crosstalk (S1A-S2A) Rev. A | Page 12 of 16 04449-0-028 ADG836L OUTLINE DIMENSIONS 3.00 BSC 10 6 3.00 BSC 1 5 4.90 BSC PIN 1 0.50 BSC 0.95 0.85 0.75 0.15 0.00 0.27 0.17 COPLANARITY 0.10 COMPLIANT TO JEDEC STANDARDS MO-187BA 1.10 MAX 8 0 0.80 0.60 0.40 SEATING PLANE 0.23 0.08 Figure 28. 10-Lead Mini Small Outline Package [MSOP] (RM-10) Dimensions shown in millimeters Rev. A | Page 13 of 16 ADG836L ORDERING GUIDE Model ADG836LYRM ADG836LYRM-REEL ADG836LYRM-REEL7 Temperature Range -40C to +125C -40C to +125C -40C to +125C Package Description Mini Small Outline Package (MSOP) Mini Small Outline Package (MSOP) Mini Small Outline Package (MSOP) Package Option RM-10 RM-10 RM-10 Branding SQA SQA SQA Rev. A | Page 14 of 16 ADG836L NOTES Rev. A | Page 15 of 16 ADG836L NOTES (c) 2004 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D04753-0-5/04(A) Rev. A | Page 16 of 16 This datasheet has been download from: www..com Datasheets for electronics components. |
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