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 Data Sheet No. PD 96942A
IRIS-F6456S
Features
* Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology. * Small temperature characteristics variation by adopting a comparator to compensate for temperature on the control part. * Low start-up circuit current (100uA max) * Built-in Active Low-Pass Filter for stabilizing the operation in case of light load * Avalanche energy guaranteed MOSFET with high VDSS * The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy. * No VDSS de-rating is required. * Built-in constant voltage drive circuit * Built-in soft drive circuit * Built-in low frequency PRC mode (20kHz) * Various kinds of protection functions * Pulse-by-pulse Overcurrent Protection (OCP) * Overvoltage Protection with latch mode (OVP) * Thermal Shutdown with latch mode (TSD)
IRIS-F6456S 650 0.71
INTEGRATED SWITCHER
Package Outline
TO-247 Fullpack (5 Lead)
Key Specifications
Type MOSFET VDSS(V) RDS(ON) MAX AC input(V) 23015% 85 to 264 Pout(W) Note 1 300 150
Descriptions
Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant Operation, and the peak power output is obtained by approximately 120 to 140% of the above listed. When the output voltage is low and ONduty is narrow, the Pout (W) shall become lower than that of above.
IRIS-F6456S is a hybrid IC consists from power MOSFET and a controller IC, designed for Quasi-Resonant (including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications. This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external components count and simplifying the circuit designs. (Note). PRC is abbreviation of "Pulse Ratio Control" (On-width control with fixed OFF-time).
Typical Connection Diagram
IRIS-F6400
GND Vin D S OCP/FB
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IRIS-F6456S
Absolute Maximum Ratings (Ta=25C)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Symbol IDpeak IDMAX EAS Vin Vth PD1 PD2 TF Top Tstg Tch
Definition Drain Current *1 Maximum switching current *5 Single pulse avalanche energy *2 Input voltage for control part O.C.P/F.B Pin voltage Power dissipation for MOSFET *3 Power dissipation for control part (Control IC) *4 Internal frame temperature in operation Operating ambient temperature Storage temperature Channel temperature
Terminals Max. Ratings 3-2 16 3-2 3-2 4-5 1-5 3-2 4-5 16 521 35 6 58 2.8 0.49 -20 ~ +125 -20 ~ +125 -40 ~ +125 150
Units A A mJ V V W W W
Note Single Pulse V2-5=0.78V Ta=-20~+125 Single Pulse IL peak=6.4A
With infintite heatsink
Without heatsink Specified by VinxIin
Refer to recommended operating temperature
*1 Refer to MOS FET A.S.O curve *2 MOS FET Tch-EAS curve *3 Refer to MOS FET Ta-PD1 curve *4 Refer to TF-PD2 curve for Control IC (See page 5) *5 Maximum switching current. The maximum switching current is the Drain current determined by the drive voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and Pin 5 due to patterning, the maximum switching current decreases as shown by V2-5 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating curve of the maximum switching current.
Fig.1
V2-5
Recommended operating conditions Time for input of quasi resonant signals For the quasi resonant signal inputted to O.C.P/F.B Pin at the time of quasi resonant operation, the signal shall be wider than Tth(2).
Tth(2)1.0sec O.C.P/F.B 0V Vth(2)
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IRIS-F6456S
Electrical Characteristics (for Control IC)
Electrical characteristics for control part (Ta=25, Vin=18V,unless otherwise specified)
Symbol Vin(ON) Vin(OFF) Iin(ON) Iin(OFF) TOFF(MAX)
Definition Operation start voltage Operation stop voltage Circuit current in operation Circuit current in non-operation Maximum OFF time Minimum time for input of quasi Tth(2) resonant signals *6 *7 TOFF(MIN) Minimum OFF time Vth(1) O.C.P/F.B Pin threshold voltage 1 Vth(2) O.C.P/F.B Pin threshold voltage 2 IOCP/FB O.C.P/F.B Pin extraction current Vin(OVP) O.V.P operation voltage Iin(H) Latch circuit sustaining current *8 Vin(La.OFF) Latch circuit release voltage *8 Tj(TSD) Thermal shutdown operating temperature
MIN 14.4 9 45 0.68 1.3 1.2 20.5 6.6 140
Ratings TYP 16 10 0.73 1.45 1.35 22.5 -
MAX 17.6 11 20 100 55 1 2 0.78 1.6 1.5 24.5 400 8.4 -
Units V V mA A sec sec sec V V mA V A V
Test Conditions
Vin=017.6V Vin=17.69V
Vin=14V
Vin=024.5V Vin=24.58.5V Vin=24.56.6V
*6 Refer to Recommended operating conditions (See page 2) *7 The minimum OFF time means TOFF width at the time when the minimum quasi resonant signal is inputted. *8 The latch circuit means a circuit operated O.V.P and T.S.D.
Electrical Characteristics (for MOSFET)
(Ta=25) unless otherwise specified
Symbol VDSS IDSS
Definition Drain-to-Source breakdown voltage Drain leakage current
MIN 650 -
Ratings TYP -
MAX 300 0.71 250 0.85
Units V A nsec /W
Test Conditions
ID=300A V5- 2=0V(short) VDS =650V V5-2=0V(short) V5-2=10V ID=3.2A
RDS(ON) On-resistance tf Switching time ch-F Thermal resistance
Between channel and internal frame
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IRIS-F6456S
IRIS-F6456S
A.S.O. temperature derating coefficient curve
IRIS-F6456S MOSFET A.S.O. Curve 100
Drain current limit by ON resistance
Ta=25C Single Pulse
100
0.1ms
A.S.O. temperature derating coefficient[%]
80
D Drain Current ID [A]
10
1ms
60
1
40
20
0.1
ASO temperature derating shall be made by obtaining ASO Coefficient from the left curve in your use.
0 0 20 40 60 80 100 120
0.01 1 10 100 1000 Drain-to-Source Voltage VDS [V]
Internal frame temperature TF []
IRIS-F6456S 18.0 16.0 Maximum Switchng Current IDMAX[A] 14.0 12.0 10.0 8.0 6.0 4.0 2.0
0 EAS temperature derating coefficient [%] 80
Maximum Switching current derating curve Ta= 20+125
IR IS-F6456S A valanche energy derating curve 100
60
40
20
0.0 0.70
25
50
75
100
125
150
0.80
0.90 1.00 V2-5 [V]
1.10
1.20
C hannel temperature T ch [ ]
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IRIS-F6456S
IRIS-F6456S MOSFET Ta-PD1 Curve 70
PD1=58[W]
0.5 0.6 IRIS-F6456S MIC TF-PD2 Curve
60
PD2=0.49[W]
Power dissipation PD1[W]
Power dissipation PD2[W]
50
With infinite heatsink
0.4
40
0.3
30
0.2
20
Without heatsink PD1=2.8[W]
0.1
10
0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta[]
0 0 20 40 60 80 100 120 140 160 Internal frame temperature TF[]
IRIS-F6456S Transient thermal resistance curve 10
Transient thermal resistance ch-c[/W]
1
0.1
0.01
0.001
1
10
100
ti e t [sec] m
1m
10m
100m
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IRIS-F6456S Block Diagram
4 Vin
START REG. T.S.D
O.V.P.
LATCH DRIVE
3 D
2 S Vth(1)
+
1 OCP/FB
O.S.C
+
Vth(2)
5 GND
Lead Assignments
Pin No.
Symbol OCP/FB S D Vin GND
IRIS
1 2 3 4 5
Description Overcurrent / Feedback Pin Source Pin Drain Pin Power supply Pin Ground Pin
Function Input of overcurrent detection signal / constant voltage control signal MOSFET source MOSFET drain Input of power supply for control circuit Ground
Other Functions
O.V.P. - Overvoltage Protection Circuit
OCP/FB S D Vin GND
T.S.D. - Thermal Shutdown Circuit STEP DRV - 2 step drive circuit
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IRIS-F6456S
Case Outline
5.50.2 5.50.2 3.450.2
2 0.2
3.2
0.2
IR
a b
3.30.5
IRIS
23 0.3
3.3
3.350.1
(4) 7 0.5
R-end R-end 2-(R1.3)
1.35-0.1 1.75-0.1 0.85-0.1 4xP2.540.1=(10.16)
+0.2 +0.2
+0.2
0.65-0.1 4.50.7
+0.2
15.60.2
aType Number F6456S bLot Number 1st letterThe last digit of year 2nd letterMonth 1 to 9 for Jan. to Sept., O for Oct. N for Nov. D for Dec. 3rd & 4th letterDay Arabic Numerals 5th letter : Registration Symbol
Weight : Approx. 7.5g Dimensions in mm DWG.No.4B-E01515A
0.5
0.5
12
3
45
Material of Pin : Cu Treatment of Pin : Ni plating + solder dip
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC FAX: (310) 252-7903 Visit us at www.irf.com for sales contact information.
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