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| Datasheet File OCR Text: |
| HE8812SG GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features * High efficiency, high output Absolute Maximum Ratings (TC = 25C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Rated Value 250 3 -20 to +60 -40 to +90 Units mA V C C 253 HE8812SG Optical and Electrical Characteristics (TC = 25C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise and fall times Symbol PO p VF IR Ct tf, tf Min 40 840 -- -- -- -- -- Typ -- 870 50 -- -- 30 10 Max -- 900 60 2.5 100 -- -- Units mW nm nm V A pF ns Test Conditions I F = 200 mA I F = 200 mA I F = 200 mA I F = 200 mA VR = 3 V VR = 0 V, f = 1 MHz I F = 50 mA Typical Characteristic Curves 254 HE8812SG Typical Characteristic Curves (cont) 255 |
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