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SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
CATHODE MARK
B 1
KDR357
SCHOTTKY BARRIER TYPE DIODE
G
FEATURES
Low Forward Voltage : VF(3)=0.43V(Typ.) Low Reverse Current : IR=5 (Max.) Small Package : USC.
K
A
H
E
2 D
J C I
MAXIMUM RATING (Ta=25
CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range pad dimension of 4 4mm.
)
SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 45 40 200 100 1 200* 125 -55 125 UNIT V V mA mA A mW
M M
DIM A B C D E F G H I J K L M
MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6
1. ANODE 2. CATHODE
USC
* : Mounted on a glass epoxy circuit board of 20 20mm,
Marking
Type Name
UL
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance IR CT
)
TEST CONDITION IF=1mA IF=10mA IF=100mA VR=40V VR=0V, f=1MHz MIN. TYP. 0.24 0.31 0.43 30 MAX. 0.55 5 A pF V UNIT
SYMBOL
2003. 2. 25
Revision No : 3
F
L
1/2
KDR357
I F - VF
10 FORWARD CURRENT I F (uA) 10 10 10 10 1 0.1 0 100 200 300 400 500
5
I R - VR
10 3 REVERSE CURRENT I R (nA)
Ta=25 C
Ta=25 C
4
3
2
10
2
10 0 10 20 30
40
FORWARD VOLTAGE V F (mV)
REVERSE VOLTAGE VR (V)
C T - VR
TERMINAL CAPACITANCE CT (pF) 30 25 20 15 10 5 0
f=1MHz Ta=25 C
0
10
20
30
40
REVERSE VOLTAGE VR (V)
2003. 2. 25
Revision No : 3
2/2

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