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| Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 0, 4/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. * Typical 2 - carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 2000 mA, Pout = 44 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 15.9 dB Drain Efficiency -- 27.5% IM3 @ 10 MHz Offset -- - 37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -- - 41 dBc @ 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 28 Vdc, 1880 MHz, 190 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched, Controlled Q, for Ease of Use * Qualified Up to a Maximum of 32 VDD Operation * Integrated ESD Protection * Lower Thermal Resistance Package * Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications * Low Gold Plating Thickness on Leads, 40 Nominal. * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. MRF6P18190HR6 1805 - 1880 MHz, 44 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature CW Operation Symbol VDSS VGS PD Tstg TJ CW Value - 0.5, +68 - 0.5, +12 648 3.7 - 65 to +150 200 190 Unit Vdc Vdc W W/C C C W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 190 W CW Case Temperature 76C, 44 W CW Symbol RJC Value (1,2) 0.27 0.30 Unit C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Freescale Semiconductor, Inc., 2005. All rights reserved. MRF6P18190HR6 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) III (Minimum) Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 250 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss -- 1.5 -- pF VGS(th) VGS(Q) VDS(on) gfs 1 2 -- -- 2 2.8 0.21 5.3 3 4 -- -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 2000 mA, Pout = 44 W Avg., f1 = 1807.5 MHz, f2 = 1817.5 MHz and f1 = 1867.5 MHz, f2 = 1877.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part is internally matched both on input and output. 3. Measurements made with device in push - pull configuration. Gps D IM3 ACPR IRL 14.5 25.5 -- -- -- 15.9 27.5 - 37 - 41 - 12 17.5 -- - 35 - 38 -9 dB % dBc dBc dB MRF6P18190HR6 2 RF Device Data Freescale Semiconductor B1 VBIAS + C7 R1 C6 + C5 C4 B2 R2 Z2 RF INPUT Z1 Z3 C8 Z13 B3 VBIAS + C13 R3 + C12 C11 C10 B4 R4 Z1 Z2 Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 0.700 x 0.067 Microstrip 1.140 x 0.114 Microstrip 2.112 x 0.067 Microstrip 0.174 x 0.067 Microstrip 0.382 x 0.250 Microstrip 0.036 x 0.764 Microstrip 0.178 x 0.764 Microstrip 0.689 x 0.073 Microstrip 0.111 x 0.764 Microstrip 0.124 x 0.856 Microstrip Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z26, Z27 Z28 Z29 Z30 Z31 PCB C9 C23 C24 C25 C26 C22 Z19 + C27 C2 R5 C1 Z5 Z7 Z9 Z11 Z15 Z17 Z21 Z23 Z25 Z27 Z29 DUT Z4 Z6 Z8 Z10 Z14 C14 C3 Z12 Z16 Z20 Z22 Z24 Z26 Z28 C15 Z18 C16 C17 C18 + C19 + C20 + VSUPPLY C21 Z30 RF Z31 OUTPUT C30 + C28 + C29 VSUPPLY 0.477 x 0.136 Microstrip 0.289 x 0.856 Microstrip 0.215 x 0.385 Microstrip 0.118 x 0.259 Microstrip 0.108 x 0.067 Microstrip 2.163 x 0.067 Microstrip 1.397 x 0.114 Microstrip 0.492 x 0.067 Microstrip 0.207 x 0.067 Microstrip Taconic RF - 35, 0.030, r = 3.5 Figure 1. MRF6P18190H Test Circuit Schematic Table 5. MRF6P18190H Test Circuit Component Designations and Values Part B1, B2, B3, B4 C1 C2, C8, C14, C22 C3, C9 C4, C10, C18, C26 C5, C11 C6, C12, C17, C25 C7, C13 C15, C23 C16, C24 C19, C20, C27, C28 C21, C29 C30 R1, R3 R2, R4 R5 Description Short RF Beads 0.6 - 4.5 pF Variable Capacitor 5.6 pF Chip Capacitors 7.5 pF Chip Capacitors 1K pF Chip Capacitors 1 F, 50 V Tantalum Capacitors 0.1 F Chip Capacitors 100 F, 50 V Electrolytic Capacitors, Radial 6.8 pF Chip Capacitors 0.56 F Chip Capacitors (1825) 22 F, 35 V Tantalum Capacitors 470 F, 63 V Electrolytic Capacitors, Radial 0.4 - 2.5 pF Variable Capacitor 1 kW, 1/4 W Chip Resistors (1206) 12 W, 1/4 W Chip Resistors (1206) 560 W Resistor Part Number 2743019447 27271SL 100B5R6CP500X 100B7R5CP500X 100B102JP50X T491C105K050AS CDR33BX104AKWS MCR50V107M8X11 600B6R8BT250XT C1825C564J5RAC T491X226K035AS MCR63V477M13X26 27283PC CRCW12061001F100 CRCW120612R0F100 D55342M07B560 Manufacturer Fair - Rite Johanson Components ATC ATC ATC Kemet Kemet Multicomp ATC Kemet Kemet Multicomp Johanson Components Vishay Vishay Vishay MRF6P18190HR6 RF Device Data Freescale Semiconductor 3 MRF6P18190 Rev. 2 + C7 R1 C6 C5 C4 C15 C3 R2 B1 B2 C2 CUT OUT AREA C14 C16 C19 C17 C18 - C21 + C20 C30 R5 C1 C8 C22 R4 B3 B4 C9 C27 C24 C25 C26 C28 + + C13 R3 C12 C11 C10 C23 - - C29 Figure 2. MRF6P18190H Test Circuit Component Layout MRF6P18190HR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16.5 16.4 16.3 Gps, POWER GAIN (dB) 16.2 16.1 16 15.9 15.8 15.7 15.6 15.5 1760 IRL 1780 1800 1820 1840 1860 1880 1900 ACPR VDD = 28 Vdc Pout = 44 W (Avg.) IDQ = 2000 mA, 2-Carrier W-CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) G 28.2 28 D 27.8 27.6 27.4 ps D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -8 -10 -12 -14 -16 -18 D, DRAIN EFFICIENCY (%) IM3 (dBc), ACPR (dBc) -8 -10 -12 -14 -16 -18 IDQ = 2600 mA IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) IM3 -34 -36 -38 -40 -42 -44 1920 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 44 Watts 15.8 15.7 15.6 Gps, POWER GAIN (dB) 15.5 15.4 15.3 15.2 15.1 15 1760 IRL Gps D VDD = 28 Vdc, Pout = 88 W (Avg.) IDQ = 2000 mA, 2-Carrier W-CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 40.4 40 39.6 39.2 -24 IM3 -26 -28 ACPR -30 -32 1920 1780 1800 1820 1840 1860 1880 1900 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 88 Watts 17.5 17 Gps, POWER GAIN (dB) 16.5 16 15.5 15 14.5 14 13.5 0.1 1400 mA VDD = 28 Vdc, f1 = 1837.5 MHz f2 = 1847.5 MHz, Two-Tone Measurements, 10 MHz Tone Spacing 1 10 100 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2600 mA 2300 mA 2000 mA 1700 mA -30 VDD = 28 Vdc, f1 = 1837.5 MHz, f2 = 1847.5 MHz Two-Tone Measurements, 10 MHz Tone Spacing -35 -40 -45 2300 mA -50 1400 mA -55 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 1700 mA 2000 mA Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6P18190HR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS IMD, INTERMODULATION DISTORTION (dBc) -10 VDD = 28 Vdc, Pout = 190 W (PEP), IDQ = 2000 mA Two-Tone Measurements, Center Frequency = 1842.5 MHz Pout, OUTPUT POWER (dBm) -20 60 59 58 57 56 55 54 53 52 51 50 49 48 P3dB = 54.13 dBm (258.82 W) P1dB = 53.51 dBm (224.38 W) Ideal -30 3rd Order Actual -40 5th Order -50 7th Order VDD = 28 Vdc, IDQ = 2000 mA Pulsed CW, 8 sec(on), 1 msec(off) Center Frequency = 1842.5 MHz 32 33 34 35 36 37 38 39 40 41 42 43 44 -60 0.01 0.1 1 10 100 TWO-TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) 40 Figure 8. Pulse CW Output Power versus Input Power -30 IM3 -35 ACPR IM3 (dBc), ACPR (dBc) 30 VDD = 28 Vdc, IDQ = 2000 mA f1 = 1837.5 MHz, f2 = 1847.5 MHz 2 x W-CDMA, 10 MHz @ 3.84 MHz Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 85_C TC = 25_C D 20 -40 10 -30_C 25_C -30_C 25_C 85_C 10 -45 0 -10 1 -50 -55 100 150 Pout, OUTPUT POWER (WATTS) AVG. W-CDMA Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power 18 17 TC = -30_C Gps, POWER GAIN (dB) 16 15 14 85_C 13 12 11 1 10 100 Pout, OUTPUT POWER (WATTS) CW D VDD = 28 Vdc IDQ = 2000 mA f = 1842.5 MHz 20 10 0 500 25_C 85_C -30_C 30 Gps 70 60 Gps, POWER GAIN (dB) 25_C 50 40 D, DRAIN EFFICIENCY (%) 17 16 15 14 13 12 11 10 9 8 7 0 35 70 105 140 175 210 245 280 315 350 Pout, OUTPUT POWER (WATTS) CW VDD = 12 V 16 V 20 V IDQ = 2000 mA f = 1842.5 MHz 24 V 32 V 28 V Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6P18190HR6 6 Figure 11. Power Gain versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 1010 MTTF FACTOR (HOURS x AMPS2) 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature TYPICAL CHARACTERISTICS W - CDMA TEST SIGNAL 100 10 PROBABILITY (%) 1 (dB) 0.1 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) +20 +30 0 -10 -20 -30 -40 -50 -60 -70 3.84 MHz Channel BW W-CDMA. 3.84 MHz Channel Bandwidth @ +5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ +10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF -ACPR @ +ACPR @ 3.84 MHz BW 3.84 MHz BW -IM3 @ 3.84 MHz BW -15 -10 -5 0 5 10 +IM3 @ 3.84 MHz BW 15 20 25 -80 -25 -20 f, FREQUENCY (MHz) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal Figure 14. 2-Carrier W-CDMA Spectrum MRF6P18190HR6 RF Device Data Freescale Semiconductor 7 f = 1880 MHz Zo = 5 Zsource f = 1800 MHz f = 1800 MHz f = 1880 MHz Zload VDD = 28 Vdc, IDQ = 2000 mA, Pout = 44 W Avg. f MHz 1800 1840 1880 Zsource 3.70 + j1.71 3.40 + j2.75 3.19 + j3.88 Zload 3.70 + j2.49 3.55 + j3.29 3.45 + j4.12 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network + Device Under Test - Output Matching Network - Z source Z + load Figure 15. Series Equivalent Source and Load Impedance MRF6P18190HR6 8 RF Device Data Freescale Semiconductor NOTES MRF6P18190HR6 RF Device Data Freescale Semiconductor 9 NOTES MRF6P18190HR6 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X Q bbb M A A G4 L 1 2 TA M B M B NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF 3 4X 4 K aaa M 4X (FLANGE) B D TA M B M ccc ccc M M TA (LID) M B M TA N (LID) M B M R H C F E PIN 5 M (INSULATOR) bbb M T SEATING PLANE (INSULATOR) S bbb M TA M B M TA M B M STYLE 1: PIN 1. 2. 3. 4. 5. CASE 375D - 05 ISSUE D NI - 1230 MRF6P18190HR6 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) support@freescale.com Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MRF6P18190HR6 Rev. 12 0, 4/2005 Document Number: MRF6P18190H RF Device Data Freescale Semiconductor |
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