|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF897R/D NPN Silicon RF Power Transistor Designed for 24 Volt UHF large-signal, common emitter, class-AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800- 970 MHz. * Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts Minimum Gain = 10.5 dB @ 900 MHz, class-AB Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP) Maximum Intermodulation Distortion -30 dBc @ 30 Watts (PEP) * Characterized with Series Equivalent Large-Signal Parameters from 800 to 960 MHz * Silicon Nitride Passivated * 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power * Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal- Migration * Circuit Board Photomaster Available by Ordering Document MRF897RPHT/D from Motorola Literature Distribution. MRF897R 30 W, 900 MHz RF POWER TRANSISTOR NPN SILICON CASE 395B-01, STYLE 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCEO VCES VEBO IC PD Tstg Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 30 60 4.0 4.0 105 0.60 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C THERMAL CHARACTERISTICS Max 1.67 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 5 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0, TC = 25C) V(BR)CEO V(BR)CES V(BR)EBO ICES hFE Cob 30 60 4.0 -- 33 80 4.7 -- -- -- -- 10.0 Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc) 30 80 120 -- DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) 14 21 28 pF (continued) (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1995 MRF897R 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL CHARACTERISTICS Common-Emitter Amplifier Power Gain (VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz) Collector Efficiency (VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz) Intermodulation Distortion (VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz) Output Mismatch Stress (VCC = 26 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, f2 = 900.1 MHz, Load VSWR = 5:1 (all phase angles)) R1 Q1 VB C25 C6 + R3 L3 B1 C4 C16 L1 C8 BALUN 2 DUT TL7 TL5 INPUT TL1 C1 C3 TL4 BALUN 1 L2 L8 C9 B2 VB VBB L4 C26 R2 + R4 C5 VCC C14 C17 B4 L6 C2 C10 TL6 TL8 TL10 COAX 2 C15 C23 C20 C24 TL11 OUTPUT TL9 L7 C21 B3 C18 Gpe 10.5 12.0 -- dB 30 38 -- % IMD -- -37 -30 dBc No Degradation in Output Power R5 + L5 C11 + C13 VBB VCC COAX 1 TL3 TL2 C7 C22 C19 R6 + C12 + B1, B2, B3, B4 -- Short Ferrite Bead, Fair Rite #2743019447 C1 -- 0.8 - 8.0 pF Var Capacitor, Johansen Gigatrim C2, C3, C23, C24 -- 43 pF, 100 mil, ATC Chip Capacitor C4, C5, C21, C22 -- 1000 pF, 100 mil, ATC Chip Capacitor C6, C7, C11, C12 -- 10 F, Electrolytic Capacitor, Panasonic C8, C9, C16, C17 -- 100 pF, 100 mil, ATC Chip Capacitor C10 -- 9.1 pF, 50 mil, ATC Chip Capacitor C13 -- 250 F Electrolytic Capacitor, Mallory C14, C18, C19, C25 -- 0.1 F, Chip Capacitor, Kemet C15 -- 1.1 pF, 50 mil, ATC Chip Capacitor C20 -- 6.8 pF, 100 mil, ATC Chip Capacitor L1, L2, L3, L4, L5, L6, L7, L8 -- 5 Turns 20 AWG, IDIA 0.126 Choke, Taylor Spring 46 nH N1, N2 -- Type N Flange Mount, Omni Spectra 3052-1648-10 Q1 -- Bias Transistor BD136 PNP R1, R12 -- 27 Ohm, 2.0 W R3, R4, R5, R6 -- 4.0 x 39 Ohm, 1/8 W, Chips Resistors in R3, R4, R5, R6 -- Parallel, Rohm 390-J SB1 -- 0.15 x 0.3 x 0.03 Cu TL1 - TL11 -- Microstrip Line, See Photomaster Balun1, Balun2, Coax 1, Coax 2 -- 2.20 50 Ohm, 0.086 o.d. Balun1, Balun2, Coax 1, Coax 2 -- semi-rigid coax, Micro Coax Balun1, Balun2, Coax 1, Coax 2 -- UT-85-M17 Circuit Board -- 1/32 Glass Teflon, Arlon GX-0300-55-22, Circuit Board -- r = 2.55 Figure 1. 840 - 900 MHz Test Circuit Schematic MRF897R 2 MOTOROLA RF DEVICE DATA 45 40 Pout , OUTPUT POWER (WATTS) 35 30 25 20 15 10 5 0 0.0 0.5 VCC = 24 Vdc ICQ = 125 mA 960 MHz 900 MHz f = 800 MHz Pout , OUTPUT POWER (WATTS) 45 40 35 30 25 20 15 10 5 2.5 3.0 0 800 VCC = 24 Vdc ICQ = 125 mA 820 840 860 880 900 f, FREQUENCY (MHz) 920 940 960 0.5 W 1.5 W 1W Pin = 3 W 2.5 W 2W 1.0 1.5 2.0 Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency 40 Pout , OUTPUT POWER (WATTS) 35 30 25 20 15 10 5 0 14 16 Pin = 2.5 W IMD, INTERMODULATION DISTORTION (dBc) 45 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 0 5 f1 = 900 MHz f2 = 900.1 MHz VCC = 24 Vdc ICQ = 125 mA 10 15 20 25 Pout, OUTPUT POWER (WATTS-PEP) 30 35 5TH 7TH 3RD ORDER 1.5 W 0.5 W f = 900 MHz ICQ = 125 mA 18 20 22 24 26 VCC, SUPPLY VOLTAGE (VOLTS) 28 30 Figure 4. Output Power versus Supply Voltage Figure 5. Intermodulation versus Output Power 14.0 13.5 G PE, POWER GAIN (dB) 13.0 12.5 12.0 11.5 11.0 10.5 10.0 9.5 9.0 0.01 125 mA f = 900 MHz VCC = 24 Vdc ICQ = 125 mA 0.1 1 Pout, OUTPUT POWER, (WATTS) 10 250 mA 200 mA ICQ = 400 mA 300 mA 12 GPE 11 GPE , POWER GAIN (dB) 10 9 8 7 6 840 Pout = 30 W (PEP) VCC = 24 Vdc ICQ = 125 mA 50 45 40 35 30 INPUT VSWR 25 20 900 , EFFICIENCY (%) 1.0 1.5 2.0 INPUT VSWR 850 860 870 880 890 f, FREQUENCY (MHz) Figure 6. Power Gain versus Output Power Figure 7. Broadband Test Fixture Performance MOTOROLA RF DEVICE DATA MRF897R 3 f MHz 800 850 900 950 Pout = 30 W (PEP), VCC = 24 V Zin ZOL* Ohms Ohms 1.7 + j9.2 2.6 + j10 4 + j9.9 5 + j8.8 5.9 - j0.4 5.7 + j2.6 5.9 + j3.4 6.2 + j4.4 ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency. f = 800 MHz 850 Zin 960 900 960 900 850 ZOL* Zo = 10 Ohms f = 800 MHz NOTE: Zin & ZOL* are given from base-to-base and collector-to-collector respectively. Figure 8. Series Equivalent Input/Output Impedances R1 C6 C25 C4 R3 L3 C18 Q1 C21 SB1 COAX1 C2 C3 C1 BALUN1 C5 C14 R2 C19 C7 R4 L4 Figure 9. 840 - 900 MHz Test Circuit Component Layout MRF897R 4 EE EE EE CC CC CC CC CC CC CC CC CC CC CC CC B1 C8 L1 C10 C15 C20 L2 C9 B2 C22 R6 EE EE EE EE L5 C C C C C C C C B3 C16 C17 B4 L6 C C C C C11 C13 R5 BALUN2 L7 C23 C24 L8 COAX2 MRF897R C12 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS -A- U Q 2 PL 0.51 (0.020) M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K N Q U INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.055 0.065 0.055 0.070 0.110 0.130 0.079 0.091 0.003 0.005 0.180 0.220 0.315 0.330 0.125 0.135 0.560 BSC BASE BASE COLLECTOR COLLECTOR EMITTER MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 1.40 1.65 1.40 1.78 2.79 3.30 2.01 2.31 0.08 0.13 4.57 5.59 8.00 8.38 3.18 3.42 14.22 BSC 1 3 2 -B- 4 5 K G D J H N E C -T- SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. CASE 395B-01 ISSUE A MOTOROLA RF DEVICE DATA MRF897R 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF897R 6 *MRF897R/D* MRF897R/D MOTOROLA RF DEVICE DATA |
Price & Availability of MRF897R |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |