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| MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-24 * * * * * IC Collector current .......................... 75A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 (7.5) 12 93 46.5 B2 E2 (7.5) B2 E2 10.5 13 10.5 34 C2E1 6.5 23 8 E2 23 15 8 C1 E1 B1 C1 C2E1 E2 5 Tab#110, t=0.5 M5 6.5 E1 B1 37 30 23 LABEL Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 75 75 500 4 750 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 250 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=75A, IB=1.5A -IC=75A (diode forward voltage) IC=75A, VCE=5V Min. -- -- -- -- -- -- 75 -- VCC=600V, IC=75A, IB1=-IB2=1.5A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 3.0 3.5 1.8 -- 2.5 15 3.0 0.25 1.2 0.13 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 IB=1.0A IB=0.5A 80 IB=0.1A 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 VCE=2.8V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C VCE=5.0V COLLECTOR CURRENT IC (A) 60 40 IB=0.02A IB=0.01A 20 Tj=25C 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.8 2.2 2.6 3.0 3.4 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 IB=1.5A Tj=25C 5 Tj=125C 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE VCE=2.8V Tj=25C VCE(sat) 3.8 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 50A 4 10 2 7 5 3 2 10 1 7 5 3 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) VCC=600V IB1=-IB2=1.5A ts 3 20A 2 SWITCHING TIME ton, ts, tf (s) 75A 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 10 0 tf 7 5 ton 3 Tj=25C 2 Tj=125C 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 -1 2 3 4 5 7 10 0 VCC=600V IB1=1.5A IC=75A Tj=25C Tj=125C REVERSE BIAS SAFE OPERATING AREA 160 COLLECTOR CURRENT IC (A) ts, tf (s) 140 IB2=-1.5A 120 100 80 60 40 20 Tj=125C IB2=-3A SWITCHING TIME ts tf 2 3 4 5 7 10 1 0 0 200 400 600 800 1000 1200 1400 1600 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 100 50S 100S 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 200 S 10 1 7 TC=25C 5 NON-REPETITIVE 3 2 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2 3 0.32 0.28 0.24 D C 1mS 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (C) Zth (j-c) (C/ W) 0.20 0.16 0.12 0.08 0.04 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 10 2 7 5 4 3 2 10 1 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 10 0 0.4 0.8 1.2 1.6 2.0 2.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75DY-24 HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 800 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 4 3 VCC=600V 2 IB1=-IB2=1.5A Tj=25C Tj=125C 10 1 7 5 4 3 2 10 0 10 0 2 3 4 5 7 10 1 10 1 Irr Qrr 10 0 trr 10 -1 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 7 2.0 1.6 Zth (j-c) (C/ W) 1.2 0.8 0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 trr (s) |
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