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| SD1538-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESI .200 .150 .140 .7. .REFRACTORY .BALLASTI .30: .I GNED FOR HIGH POWER PULSE IFF, DME, AND TACAN APPLICATIONS W (typ.) IFF 1030 - 1090 MHz W (min.) DME 1025 - 1150 MHz W (typ.) TACAN 960 - 1215 MHz 8 dB MIN. GAIN GOLD METALLIZATION N G AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS N PUT AND OUTPUT MATCHED, COMMON BASE CONFIGURATION .400 x .400 2LFL (M138) hermetically sealed ORDER CODE SD1538-08 BRANDING 1538-8 PIN CONNECTION DESCRIPTION The SD1538-08 is a gold metallized, silicon NPN power transistor. The SD1538-08 is designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1538-08 is packaged in a metal/ceramic package with internal input/output matching, resulting in improved broadband performance and low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter 1. Collector 2. Base 3. Emitter 4. Base Value Unit VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 11 583 +200 - 65 to +150 V V V A W C C THERMAL DATA RTH(j-c) September 6, 1994 Junction-Case Thermal Resistance 0.30 C/W 1/5 SD1538-08 ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVEBO ICES hFE DYNAMIC Symbol I C = 10mA I C = 25mA I E = 5mA VCE = 50V VCE = 5V IE = 0mA VBE = 0V IC = 0mA IE = 0mA IC = 300mA 65 65 3.5 -- 5 -- -- -- -- -- -- -- -- 10 -- V V V mA -- Test Conditions Value Min. Typ. Max. Unit POUT PG Note: f = 1025 - 1150 MHz PIN = 25 W f = 1025 - 1150 MHz PIN = 25 W = 10Sec, Duty Cyle VCE = 50 V VCE = 50 V 150 7.8 -- -- -- -- W dB Pulse W idth = 1% TYPICAL PERFORMANCE POWER OUTPUT vs POWER INPUT POWER OUTPUT vs FREQUENCY 2/5 SD1538-08 TYPICAL PERFORMANCE (cont'd) EFFICIENCY vs POWER INPUT EFFICIENCY vs FREQUENCY IMPEDANCE DATA TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD IMPEDANCE 3/5 SD1538-08 TEST CIRCUIT C1, C2 C3 C4 C5 L1 L2 : : : : .6 - 4.5pF Gigatrim .100 x .100 120pF Chip Capacitor .100 x .100 470pF Chip Capacitor 100F Electrolytic : #20 AWG : 3 Turns, #20 AWG Wound on #32 Drill Bit Board Material: Telfon Er = 2.5, Thickness = .031" 4/5 SD1538-08 PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0138 rev. D Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c)1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. |
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