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| Product Description Stanford Microdevices' SSW-508 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable 8-pin small outline plastic package. This single-pole, single-throw, non-reflective switch consumes less than 50uA and operates at -5V and 0V for control bias. P1dB at -5V is +25dBm typical and can be increased to +28dBm with -8V supply. The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. SSW-508 DC-4 GHz GaAs MMIC SPST Switch Isolation vs. Frequency VControl = -5 V -20 -30 dB -40 -50 -60 D C 1 2 3 4 Product Features * High Isolation : 40dB at 1GHz, 30dB at 2GHz * Low DC Power Consumption * Low Insertion Loss : 1.0dB at 2GHz * Non-Reflective * Low Cost Small Outline Plastic Package Applications * Analog/Digital Wireless Communications * AMPS, PCS, DEC and GSM Bands Switches GHz Electrical Specifications at Ta = 25C Sym bol In s . P a r a m e te r s & T e s t C o n d itio n s : Z 0= 5 0 o h m s V = -5 V In s e r tio n L o s s f = 0 .0 5 -1 .0 G H z f = 1 .0 0 -2 .0 G H z f = 2 .0 0 -4 .0 G H z f = 0 .0 5 -1 .0 G H z f = 1 .0 0 -2 .0 G H z f = 2 .0 0 -4 .0 G H z f = 0 .0 5 -2 .0 G H z f = 2 .0 0 -4 .0 G H z f = 0 .0 5 -2 .0 G H z f = 2 .0 0 -4 .0 G H z V = -5 V V = -8 V V = -5 V V = -8 V U n its dB dB dB dB dB dB 35 25 M in . Ty p . 0 .8 1 .0 1 .2 45 35 30 1 .3 1 .7 1 .3 1 .7 +25 +28 +44 +47 40 10 M ax. 1 .2 1 .4 Is o l. Is o la tio n VSW Ron In p u t & O u tp u t V S W R ( o n o r lo w lo s s s ta te ) In p u t & O u tp u t V S W R ( o ff o r i s o l a t e d s t a t e ) 1 d B C o m p r e s s io n a t 2 .0 G H z dBm dBm dBm dBm uA nS V S W R o ff P 1dB T O IP ID Is w T h ir d O r d e r In te r c e p t P o in t D e v ic e C u r r e n t S w itc h in g S p e e d 1 0 % to 9 0 % o r 9 0 % to 1 0 % The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 1999 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 7-33 SSW-508 DC-4 GHz GaAs MMIC SPST Switch Absolute Maximum Ratings RF Input P ower De vic e Vol tage Operating Te m p e r a t u r e Storage Te m p e r a t u r e T he rm al R esis ta nce 2W M ax>500MHz -10V -4 5C to +8 5C Truth Table V1 V2 J1-J2 J1-J3 -5 0 0 -5 Low Loss Is olat ion Is olat ion Low Loss -6 5C to +1 50C 20 deg C/W Pin Out Pin Fu nction Switch Schematic 1 2 3 4 5 6 7 8 J1 V1 V2 GND J2 GND GND GND Switches Insertion Loss vs. Frequency VControl = -5 V 0.0 -0.5 On Port Input/Output VSWR vs. Frequency VControl = -5 V 2.0 1.8 1.6 dB -1.0 -1.5 -2.0 DC 1 2 3 4 5 6 1.4 1.2 1.0 DC 1 2 3 4 5 6 GHz GHz 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC http://www.stanfordmicro.com 7-34 |
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