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| (R) April 2005 Preliminary www.lovoltech.com LVS2100N N-Channel PowerJFET(R) Product Summary Typical VDS RDS(ON) @ 0 VGS 11.5 Features Max 24 14 V m * Device is fully on @ VGS = 0V. * Bidirectional blocking when off (no body diode) Applications * Notebook battery switch: Each JFET replaces 2 P-Channel series MOSFETs Pinouts SO-8 Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol VDSS VGS VDG ID TJ TSTG PD Parameter Drain to Source voltage Gate to Source voltage Drain to Gate voltage Drain Current Junction Temperature Storage Temperature Lead Soldering Temperature Power Dissipation Conditions Rating 24 -12 -28 11 50 -55 to 150 -65 to 150 260 2.5 1.3 Units V V V A A C C C W W Continuous, TC = 25C Pulsed, 300S 10 seconds, 1.6mm from case TA = 25C, Note 1 TA = 25C, Note 2 Thermal Resistance Symbol RJA RJC Resistance from: Junction to Ambient Junction to Case Conditions Note 1 Note 2 Rating 50 96 25 Units C/W C/W C/W Note 1. Mounted on 1 in.2, 2 oz copper on FR-4 Note 1. Mounted on 0.05 in.2, 0.5 oz. copper on FR-4 (c)2005 Lovoltech Inc. REV. 0.8.0 04/14/05 (R) LVS2100N Preliminary Electrical Specifications Symbol Static BVDSX BVGDO BVGSO RDS(ON) VGS(OFF) @TJ = 25C (unless otherwise specified) Conditions ID = 0.5 mA, VGS= -4 V IG = -50A IG = -50A VGS = 0V, ID = -7A VGS = 0V, ID = 7A VDS = 16 V, ID = 250A VGS = 5V, VDS = 15V VDS = 12V Parameter Breakdown Voltage Drain to Source Breakdown Voltage Gate to Drain Breakdown Voltage Gate to Source Drain to Source On Resistance Gate Threshold Voltage Total Gate Charge Gate to Drain charge Gate to Source Charge Gate resistance Turn-on Delay Turn-off Delay Rise Time Fall Time Input Capacitance Output Capacitance Gate-Source Capacitance Gate-Drain Capacitance Drain-Source Capacitance Min 24 Typ 28 -32 -14 11.5 13 -2.5 9.3 6.1 3.2 3 4 9 2 7 860 350 588 272 15 Max Units V V V m m V nC nC nC nS -28 -12 14 17 Dynamic QG QGD QGS RG TD(ON) TD(OFF) TR TF CISS COSS CGS CGD CDS ID=15A Circuit of Figure 1 pF pF pF pF pF 15V ID RL 5V 2.2 D.U.T. G D S Figure 1. Switching test circuit. www.lovoltech.com 2 (R) LVS2100N Preliminary Typical Characteristics 15 @TJ = 25C (unless otherwise specified) 1.3 14 Normalized RDS(ON) -10 -5 0 5 10 1.2 RDS (ON) 13 12 1.1 11 10 1 0 20 40 60 80 100 120 140 160 ID (A) Die temperature (TJ) C Figure 2. RDS(ON) vs. Drain Current @VGS = 0V Figure 3. Normalized RDS(ON) vs. junction temperature @ ID = -7A 4.5 4.0 3.5 Normalized RDS(ON) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 VGS Figure 4. Normalized RDS(ON) vs. @ ID = -7A www.lovoltech.com 3 (R) LVS2100N Preliminary Dimensional Outline Drawing SO-8 Dim A A1 B C D E e H h L q 8-lead narrow SOIC Millimeters Min Max 1.35 1.75 0.10 0.20 0.35 0.51 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.50 0.93 0 8 Inches Min Max 0.0530 0.0690 0.0040 0.0080 0.0140 0.0200 0.0075 0.0100 0.1890 0.1960 0.1500 0.1570 0.050 BSC 0.2280 0.2440 0.0100 0.0200 0.0200 0.0370 0 8 8 7 6 5 E H Recommended minimum pad layout dimensions in inches (mm) 1 2 3 4 h x 45 C 0.25 mm (Gage Plane) 0.101 mm 0.004" L q Conforms to JEDEC part number MS-012 www.lovoltech.com 4 (R) LVS2100N Preliminary Ordering Information Part Number LVS2001N Package SO-8 Packing 13" Tape and Reel, 2500 units / reel LIFE SUPPORT POLICY LOVOLTECH'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF LOVOLTECH SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. A critical component in any component of a life support, device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 2. www.lovoltech.com 5 |
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