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PHOTOMULTlPLlER TUBES
R2693, R2693P
Transmission Mode Low Noise Bialkali Photocathode 28mm (1-1/8 inch) Diameter, Side-on Type
FEATURES
Low Dark Current Low Dark Counts (R2693P) Wide Photocathode Excellent Spatial Uniformity Fast Time Response
APPLICATIONS
Fluorescence Detector Chemiluminescence Detector Raman Spectroscopy Emission Spectroscopy Light Scattering Detector
GENERAL
Parameter
Spectral Response Wavelength of Maximum Response Photocathode MateriaI Minimum Effective Area Window Material Dynode Structure Number of Stages Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base SuitabIe Socket Applicable Socket Assembly
Description
185 to 650 375 Low noise bialkali 16(H) 18(W) UV glass Circular-cage 9 1.2 3.4 11-pin base JEDEC No. B11-88 E678-11A (option) E717-21 (option)
Unit
nm nm
Figure 1: Electron Trajectories
LIGHT
mm
PHOTOELECTRONS
PHOTOCATHODE
GLASS BULB
pF pF
2nd DYNODE
FOCUSING ELECTRODES 1st DYNODE 3rd DYNODE
TPMSC0003EB
Figure 2: Typical Spatial Uniformity
X-Axis RELATIVE SENSITIVITY (%)
100 80 60 40 20 0 8 4 0 4 8 9 4.5 0 4.5 9
Y-Axis
100 80 60 40 20 0
Y
SPOTSIZE : 1mm DIA SUPPLY VOLTAGE : 1000V WAVELENGTH : 400nm
X
DISTANCE FROM CENTER OF PHOTOCATHODE (mm)
DISTANCE FROM CENTER OF PHOTOCATHODE (mm)
TPMSB0066EA
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c) 1993 Hamamatsu Photonics K.K.
RELATIVE SENSITIVITY (%)
PHOTOMULTlPLlER TUBES R2693, R2693P
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage Average Anode Current Ambient Temperature Between Anode and Cathode Between Anode and Last Dynode
A
Value
1250 250 0.1 -80 to +50
Unit
Vdc Vdc mA
CHARACTERISTlCS (at 25
Parameter
Cathode Sensitivity Anode Sensitivity Gain
D
)
R2693 for General Purpose Min. Typ. Max.
30 20.5 50 62 7.0 300 3.7 105 6 106 0.5 5.0
R2693P for Photon Counting Min. Typ. Max.
30 20.5 50 62 7.0 300 3.7 105 6 106 0.1 15 2.0 50
Unit
% A/lm mA/W A/lm-b A/lm A/W
Quantum Efficiency at 375nm Luminous B Radiant at 375nm (Peak) Blue C Luminous D Radiant at 375nm
100
100
Anode Dark Current E (After 30min. storage in darkness) Anode Dark Counts E ENI(Equivalent Noise Input) F
D
nA cps W ns ns ns % %
8.6
G H J
Time Response Anode Current Stability
K
Anode Pulse Rise Time Electron Transit Time Current Hysteresis Voltage Hysteresis
Transit Time Spread (FWHM)
10-17 1.2 18 1.0 0.5 1.0
3.9
10-17 1.2 18 1.0 0.5 1.0
NOTES
A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 100 volts between the cathode and all other electrodes connected together as anode. C: The value is cathode output current when a blue filter(Corning CS-5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. D: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1:Voltage Distribution Ratio G:The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. H: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. In measurement, the whole photocathode is illuminated. J: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the single photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. K: Hysteresis is temporary instability in anode current after light and voltage are applied. Hysteresis = lmax. li lmin. 100(%)
R2693
Electrodes Ratio Electrodes Ratio
K Dy1 Dy2 Dy3 * * * * Dy9 P 1 1 1 ********1 1 K Dy1 Dy2 Dy3 * * * * Dy9 P 2.5 1.5 1 * * * * * * * * 1 1
R2693P
ANODE CURRENT
SuppIy Voltage : 1000Vdc, K : Cathode,Dy : Dynode, P : Anode
li
l max. l min. TIME
E: Measured with the same supply voltage and voltage distribution ratio as Note D after removal of light. F: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where 2q.ldb.G. S q = Electronic charge (1.60 10-19 coulomb). ldb = Anode dark current(after 30 minutes storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. f
0
5
6
7 (minutes)
TPMSB0002EA
(1)Current Hysteresis The tube is operated at 750 volts with an anode current of 1 microampere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 micro -ampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation.
Figure 3: Typical Spectral Response
100
TPMSB0060EA
Figure 4: Typical Time Response
200
TPMSB0061EA
CATHODE RADIANT SENSITIVITY CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%)
100 80 60
10 QUANTUM EFFICIENCY
TIME (ns)
40
TRAN
20
SIT TIM
E
1
10 8 6
0.1
4
2
RISE
300 500 700
TIME
1000 1500
0.01
1
200
400
600
800
WAVELENGTH (nm)
SUPPLY VOLTAGE (V)
Figure 5: Typical Gain and Anode Dark Current (R2693)
108
TPMSB0062EA
Figure 6: Typical Single Photoelectron Pulse Height Distribution (R2693P)
1.0
TPMSB0063EA
10-5
107
10-6
FULL SCALE(SIGNAL+DARK):1 10 4 FULL SCALE(DARK) :1 10 3
0.8 SIGNAL+DARK
ANODE DARK CURRENT(A)
106
10-7
COUNTS PER CHANNEL
105 GAIN
G
AI
N
10-8
0.6
AR
K
C
U
R
R
104
EN
T
0.4
10-9
WAVELENGTH OF INCIDENT LIGHT : 400nm SUPPLY VOLTAGE : 1000vdc SIGNAL+DARK COUNTS : 5364cps DARK COUNTS : 15cps AMBIENT TEMPERATURE : +25
AN
O
D
E
103
10-10
D
0.2
DARK
102
10-11
0 0 200 400 600 800 1000 CHANNEL NUMBER(ch) DISCRIMINATION LEVEL
101 300
400
500
600
800
1000
10-12 1300
SUPPLY VOLTAGE(V)
Figure 7: Typical Temperature Coefficient of Anode Sensitivity
+1.2 +0.8
) TEMPERATURE COEFFICIENT(%/
TPMSB0064EA
Figure 8: Typical Temperature Characteristics of Dark Current(R2693) (at 1000V, after 30minutes storage)
100
TPMSB0065EA
10
+0.4
0
ANODE DARK CURRENT (nA)
1
-0.4
0.1
-0.8
-1.2 200
300
400
500
600
700
0.01 0 20 40 60 TEMPERATURE (C)
80
100
WAVELENGTH (nm)
PHOTOMULTlPLlER TUBES R2693, R2693P
Figure 9: Dimensional Outline and Basing Diagram (Unit: mm)
29.0 1.7
18MIN. PHOTOCATHODE
16MIN.
76MAX.
90MAX.
2.5
DY5 DY4 4 DY3 3 DY2 2
5
DY6 6
7
DY7 8 DY8 9 DY9 10 P
49.0
1
11 K
DY1
DIRECTION OF LIGHT
34MAX. HA COATING 11 PIN BASE JEDEC No. B11-88
BOTTOM VIEW (BASING DIAGRAM)
TPMSA0007EA
Figure 10: Optional Accessories (Unit: mm) Socket E678-11A
49 38
33.0 0.3 3.5 5
D Type Socket Assembly E717-21
PMT P R10 DY9 38.0 0.3 49.0 0.3 DY8 DY7 DY6 DY5 31.0 0.5 HOUSING (INSULATOR) POTTING COMPOUND DY4 DY3 DY2 DY1 K 9 R9 8 R8 7 R7 6 5 4 R4 3 R3 450 10 2 R2 1 R1 11
-HV
SOCKET PIN No. 10
C3 C2 C1
SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) POWER SUPPLY GND AWG22 (BLACK)
3.5
33
29 4.8
R6 R to R10 : 330k C1 to C3 : 0.01 F R5
5
29 4
41.0 0.5
AWG22 (VIOLET)
18
R1 to R10 : 330k C1 to C3 : 0.01 F
TACCA0002ED
TACCA0008EB
Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
Warning-Personal Safety Hazards Electrical Shock-Operating voltages applied to this device present a shock hazard.
HAMAMATSU PHOTONICS K.K., Electoron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limted: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: (44)181-367-3560, Fax: (44)181-367-6384 North Europe: Hamamatsu Photonics Norden AB: Farogatan 7, S-164-40 Kista Sweden, Telephone: (46)8-703-29-50, Fax: (46)8-750-58-95 Italy: Hamamatsu Photonics Italia: S.R.L.: Via Della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)2-935 81 733, Fax: (39)2-935 81 741
TPMS1014E01 MAR. 1993

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