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SD56120
RF POWER TRANSISTORS The LdmoST FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
* EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION, PUSH-PULL * POUT = 100 W WITH 14 dB GAIN @ 860 MHz * BeO FREE PACKAGE
ORDER CODE SD56120 M246 epoxy sealed BRANDING TSD56120
DESCRIPTION The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity.
PIN CONNECTION
1 2
3
5 1-2 Drain 4-5 Gate
4 3 Source
ABSOLUTE MAXIMUM RATINGS (TCASE = 25C)
Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 20 14 217 200 -65 to +150 Unit V V A W C C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 0.6 C/W
June 2001
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SD56120
ELECTRICAL SPECIFICATION (TCASE = 25C) STATIC (Per Section)
Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 20 V VDS = 28 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 28 V VDS = 0 V ID = 200 mA ID = 3 A ID = 3 A VDS = 28 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 3.0 0.7 3 82 48 2.8 Min. 65 1 1 5.0 0.8 Typ. Max. Unit V A A V V mho pF pF pF REF. 7194566A
DYNAMIC
Symbol POUT GPS D GPS D IMD Load mismatch VDD = 28 V VDD = 28 V VDD = 28 V VDD = 28 V VDD = 28 V VDD = 28 V Test Conditions IDQ = 400 mA f = 860 MHz IDQ = 400 mA POUT = 100 W f = 860 MHz IDQ = 400 mA POUT = 100 W f = 860 MHz IDQ = 400 mA POUT = 100 W PEP IDQ = 400 mA POUT = 100 W PEP IDQ = 400 mA POUT = 100 W PEP f = 860 MHz 5:1 Min. 100 14 50 16 60 16 50 -28 Typ. Max. Unit W dB % dB % dBt VSWR
VDD = 28 V IDQ = 400 mA POUT = 100 W ALL PHASE ANGLES
note: f1 = 860 MHz PEP f2 = 860.1 MHz
IMPEDANCE DATA D ZDL
Typical Input Impedance G Zin
Typical Drain Load Impedance
S
FREQ. 860 MHz ZIN () 1.11 - j 2.63 ZDL() 3.01 + j 5.34
Measured drain to drain and gate to gate respectively. 2/8
SD56120
TYPICAL PERFORMANCE Capacitance vs. Drain Voltage (per section)
C (pF)
1000
Gate-Source Voltage vs. Case Temperature
VGS (NORMALIZED)
1.04
f = 1 MHz per section
1.02
100
Ciss
Id = 1 A
Id = 2 A Coss
1
Id = 3 A Id = 4 A Id = 5 A
10
0.98
Crss
VDS = 10 V per section
1 0 10 20 30 40 50
0.96 -25 0 25 50 75 100
Vds (V)
Tc (C)
Drain Current vs. Gate Voltage
Id (A)
6
Output Power vs. Input Power
Pout (W)
140
5
120
100 4 80 3 60 2 40 1
Vds = 10 V per section VDD = 28 V IDQ = 400 mA f = 860 MHz
20
0 2.5 3 3.5 4 4.5 5
0 0 1 2 3 4
Vgs (V)
Pin (W)
Power Gain vs. Input Power
Pg (dB)
20 19 18 17
Efficiency vs. Output Power
Nd (%)
70
60
50
40 16 30 15 20 14 13 12 0 1 2 3 4
Vdd = 28 V Idq = 400 mA f = 860 MHz f = 860 Mhz Vdd = 28 V Idq = 400 mA
10
0 0 20 40 60 80 100 120 140
Pin (W)
Pout (W)
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SD56120
TYPICAL PERFORMANCE Power Gain vs. Output Power
Gp (dB)
22
Intermodulation Distortion vs. Output Power
IMD3 (dBt)
0 -5
20
Idq = 800 mA Idq = 1 A
-10 -15 -20 -25
18
Idq = 400 mA
16
Idq = 200 mA
-30
Idq = 600 mA
-35 14 -40 -45 12
Vdd = 28V f = 860 MHz f1 = 860 MHz f2 = 860.1 MHz Vdd = 28 V Idq = 400 mA
-50 -55 -60
0 20 10 30 40 50 60 70 80
10 1 10 100 1000
100 90 110
120
Pout (W)
Pout (WPEP)
Output Power vs. Drain Voltage
Pout (W)
130 120 110
Output Power vs. Bias Current
Pout (W)
120
115 100 90 80 70 60 105 50 40 30 12 16 20 24 28 32 36
Pin = 2.5 W Idq= 400 mA f = 860 MHz Vdd = 28 V Pin = 2.5 W f = 860 MHz
110
100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Vds (V)
Idq (A)
Output Power vs. Gate-Source Voltage
Pout (W)
140
120
100
80
60
40
Vdd = 28 V Pin = 2.5 W f = 860 MHz
20
0 0 0.5 1 1.5 2 2.5 3 3.5
Vgs (V)
4/8
SD56120
860 MHz TEST CIRCUIT SCHEMATIC
TL1 Z9 Z1 Z3 Z2 Z5 Z7 Z6 Z4 Z8 TL2
TRANSMISSON LINE DIMENSIONS
DIMENSION TABLE IN MM W XL WXL Z1,Z12 0.215 X TYP 5,46 X TYP Z2,Z3 0.215 X 0.850 5,46 X 21,59 Z4,Z5 0.344 X 1.000 8,73 X 25,40 Z6,Z7 0.344 X 0.440 8,73 X 11,17 Z8,Z9 0.700 X 0.870 17,78 X 22,10 Z10,Z11 0.215 X 0.670 5,46 X 17,02 TL1 & TL2 0.100 X 2.37 2,54 X 60,20 DIMENSION OF MCROSTRIP = 1/2 PRINTED BALUN ONLY. DIM
Z11 Z10
Z12
VGG
+
R1
FB1
VDD
C21 C20 C19 C18
R2 C28 C29
C22 L1 R3
C16
R7
C6
D.U.T. C12
RF INPUT
C1
BALUN1
C2 C4 C3 C5 C8
C9 C11 C10
C13
BALUN2
C14
RF OUTPUT
R1
R8
C7 C15
R6
L2
VGG
+
C17
R4
R5 C27
FB2
VDD
C26 C25 C24 C23
C31
C30
NOTES: 1. DIMENSIONS AT COMPONENT SYMBOLS ARE REFERENCE FOR COMPONENT PLACEMENT. 2. GAP BETWEEN GROUND & TRANSMISSION LINE = 0.056 [1.42] +0.002 [0.05] -0.000 [0.00] TYP. 3. DIMENSIONS OF INPUT AND OUTPUT COMPONENT FROM EDGE OF TRANSMISSION LINES.
REF. 7223940A
860 MHz TEST CIRCUIT COMPONENT PART LIST
COMPONENT C32 C31, C28 C29, C30 C27, C22 C26, C21 C25 ,C20 C24, C19, C17, C16 C23, C18 C15, C14, C13, C12 C11 C10 C9, C8 C7, C6, C5 C4 C3, C2 C1 R7, R8 R6, R3 R5, R2 R4, R1 B2, B1 L2, L1 FB2, FB1 PCB DESCRIPTION .6 - 4.5 pF VARIABLE CAPACITOR .01 F ATC 200B SURFACE MOUNT CERAMIC CHIP CAPACITOR 62 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 270 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 1200 pF ATC 700B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.1 F 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR 10 F 50V ALUMINUM ELECTROLYTIC RADIAL LEAD SURFACE MOUNT CAPACITOR 100 F 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR 47 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 0.8 - 8 pF GIGATRIM VARIABLE CAPACITOR 3.0 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 4.3 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 10 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 2.0 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 20 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 1.3 pF ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR 100 OHM 1/4 W SURFACE MOUNT CHIP RESISTOR 22 OHM 1/4 W CARBON LEADED RESISTOR 4.7 OHM 1/4 W CARBON LEADED RESISTOR 82 OHM 1/4 W CARBON LEADED RESISTOR BALUN, 50 OHM SUCOFORM, OD 0.141 2.37 LG COAXIAL CABLE OR EQUIVALENT INDUCTOR, 6 TURN AIR-WOUND #18AWG ID=0.130[3,30] MAGNET WIRE SURFACE MOUNT EMI SHIELD BEAD ULTRALAM 2000. 0.030" THK r = 2.55, 2 Oz ED CU BOTH SIDES 5/8
SD56120
860 MHz PRODUCTION TEST FIXTURE
+
+
+
860 MHz TEST CIRCUIT PHOTOMASTER
6.4 inches
6/8
4 inches
SD56120
M246 (.230 x .650 WIDE 4/L BAL N/HERM W/FLG) MECHANICAL DATA
mm MIN. A B C D E F G H I J K L 28.83 16.26 4.19 0.08 1.83 1.40 3.18 5.33 6.48 17.27 5.72 22.86 29.08 16.76 5.08 0.15 2.24 1.65 3.43 1.135 .640 .165 .003 .072 .055 .125 TYP. MAX 5.59 6.73 18.29 5.97 MIN. .210 .255 .680 .225 .900 1.145 .660 .200 .006 .088 .065 .135 Inch TYP. MAX .220 .265 .720 .235
Controlling dimension: Inches
Ref. 7145054A
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SD56120
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved
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