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| Semiconductor STK630F Power MOSFET Features * Avalanche rugged technology. * Low input capacitance. * Low leakage current : 10 (Max.) @ VDS=200V. * Low RDS(on) : 0.30(Typ.) Ordering Information Type NO. STK630F Marking STK630 Package Code TO-220F-3L Outline Dimensions 3.05~3.35 9.80~10.20 2.60~3.00 unit : mm 15.40~15.80 12.20~12.60 9.10~9.30 12.40~13.00 1.07 Min. 0.90 Max. 0.60 Max. 2.54 Typ. 2.54 Typ. 1 2 3 0.60 Max. 3.46 Typ. 4.70 Max. 2.70 Max. PIN Connections 1. Gate 2. Drain 3. Source KST-H036-002 1 STK630F Absolute maximum ratings Characteristic Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Drain power dissipation (TC=25) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy Junction temperature Storage temperature range * Limited by maximum junction temperature Symbol VDSS VGSS ID IDP PD EAS IAR EAR TJ Tstg Rating 200 30 TC=25 TC=100 36 30 162 9 7.2 150 -55~150 9 5.7 Unit V V A A A W mJ A mJ C C Thermal Resistance Characteristic Thermal resistance junction-case Thermal resistance junction-ambient Symbol Rth(J-C) Rth(J-A) Typ. - Max. 4.16 62.5 Units /W KST-H036-002 2 STK630F Electrical Characteristics Characteristic Drain-source breakdown voltage Gate threshold voltage Drain-source cut-off current Gate leakage current Static drain-source on-resistance Forward transfer conductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge (Tc=25C) Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Test Condition ID=250 , VGS=0V ID=250 , VDS=VGS VDS=200V, VGS=0V VDS=0V, VGS=30V VGS=10V, ID=4.5A VDS=40V, ID=4.5A VGS=0V, VDS=25V f=1 Min. 200 2.0 - Typ. 3.87 550 110 40 13 13 30 18 22 4.3 10.9 Max. 4.0 10 100 0.4 - Unit V V S - VDD=100V, ID=9A RG=12 Fig 13. - VDS=160V, VGS=10V, ID=9A Fig 12. - nC - Source-Drain Diode Ratings and Characteristics Characteristic Source current (DC) Source current (Pulsed) Diode forward voltage Reverse recovery time Reverse recovery charge (Tc=25C) Symbol IS ISP VSD trr Qrr Test Condition Integral reverse diode in the MOSFET VGS=0V, IS=9A Is=9A, VGS=0V dIS/dt=50A/ Min - Typ 300 0.87 Max 9 36 1.5 - Units A V ns uC Note ; Repetitive rating : Pulse width limited by maximum junction temperature L=3mH, IAS=9A, VDD=50V, RG=27 , starting TJ=25 Pulse Test : Pulse Width 400 , Duty cycle 2% Essentially independent of operating temperature KST-H036-002 3 STK630F Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS Fig. 3 RDS(on) - ID Fig. 4 IS - VSD Fig. 5 VGS - QG Fig. 6 Capacitance - VDS KST-H036-002 4 STK630F Fig. 7 V(BR)DSS - TJ Fig. 8 RDS(on) - TJ C C Fig. 9 ID - TC Fig. 10 Safe operating Area Fig. 11 Thermal Response KST-H036-002 5 STK630F Fig. 12 Gate Charge Test Circuit & Waveform Fig. 13 Switching Time Test Circuit & Waveform Fig. 14 EAS Test Circuit & Waveform KST-H036-002 6 STK630F Fig. 15 Peak Diode Recovery dv/dt Test Circuit & Waveform KST-H036-002 7 STK630F The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication equipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. KST-H036-002 8 |
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