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2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
Transistors
General Purpose Transistor (50V, 0.15A)
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA)
External dimensions (Unit : mm)
2SD2707
0.2
1.2 0.32
1.2 0.8
(2) (3) (1)
0.2
0.4 0.4 0.8
0.5
0.22
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SD2654, 2SD2707 2SD2351, 2SD2226K 2SD2227S Tj Tstg PC Symbol VCBO VCEO VEBO IC Limits 60 50 12 0.15 0.2 0.15 0.2 0.3 150 -55 to +150 C C W Unit V V V
ROHM : EMT3
(1) Base (2) Emitter (3) Collector
2SD2654
(1) (2)
0.13
0.2 0.5 0.5
0.8 1.6
0.15
0.2
A (Pulse)
0.3
A (DC)
(3)
0.55
Junction temperature Storage temperature
Single pulse Pw=100ms
ROHM : EMT3 EIAJ : SC-75A
0~0.1
0.7
1.0
1.6
0.1Min.
(1) Emitter (2) Base (3) Collector
2SD2351
(1)
0.65 0.65 0.7
Packaging specifications and hFE
Type 2SD2707 VMT3 VW BJ T2L 8000 2SD2654 EMT3 VW BJ TL 3000 2SD2351 UMT3 VW BJ T106 3000 2SD2226K SMT3 VW BJ T146 3000 2SD2227S
0.15
0.3
(3)
1.25 2.1
0.2
package hFE Marking Code Basic ordering unit (pleces)
SPT VW - TP 5000
(2)
0~0.1
0.9
1.3
2.0
ROHM : UMT3 EIAJ : SC-70
0.1Min.
Denotes hFE
2SD2226K
Each lead has same dimensions
(1) Emitter (2) Base (3) Collector
(1)
0.4
(3)
1.6 2.8
0.15
0.8
1.1
0.95 0.95 1.9 2.9
(2)
ROHM : SMT3 EIAJ : SC-59
0.3Min.
Each lead has same dimensions
(1) Emitter (2) Base (3) Collector
2SD2227S
3
4
0~0.1
2
(15Min.)
3Min.
0.45
2.5 5
0.5 0.45
ROHM : SPT EIAJ : SC-72
(1) (2) (3)
Taping specifications
(1) Emitter (2) Collector (3) Base
Rev.A
1/3
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
Transistors
Electrical characteristics (Ta = 25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
Measured using pulse current.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min. 60 50 12 - - - 820 - -
Typ. - - - - - - - 250 3.5
Max. - - - 0.3 0.3 0.3 2700 - -
Unit V V V A A V - MHz pF IC=10A IC=1mA IE=10A VCB=50V VEB=12V
Conditions
IC/IB=50mA/5mA VCE/IC=5V/1mA VCE=5V, IE=-10mA, f=100MHz VCB=5V, IE=0A, f=1MHz

Electrical characteristics curves
2.0
COLLECTOR CURRENT : IC (mA)
Ta=25C
COLLECTOR CURRENT : IC (mA)
1.2A
200
500A 160 450A 400A 350A 300A
200
1.6
COLLECTOR CURRENT : IC (mA)
A 250 A 200
150A
100A
VCE=5V
100 50
10 5 2 1 0.5 0.2 0 0.2
0.6A
0.8
0.4A
80
50A
0.4
0.2A
IB=0
40
Ta=25C Measured using pulse current 4 8
IB=0
0
0
0.1
0.2
0.3
0.4
0.5
0
0
12
16
20
Ta=10 0
1.2
0.8A
120
25C -25C
2.0A 1.8A 1.6A 1.4A
1.0A
C
20
0.4
0.6
0.8
1.0
1.2
1.4
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter output characteristics ( )
Fig.2 Grounded emitter output characteristics ( )
Fig.3 Grounded emitter propagation characteristics
5000
DC CURRENT GAIN : hFE
Ta=25C Measured using pulse current
VCE=10V
5000
DC CURRENT GAIN : hFE
Ta=100C 25C
VCE=5V Measured using pulse current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
10000
10000
1000 500 200 100 50 20 10 5 2 1 0.2 0.5 1 2 5 10 20
IC / IB=50 20 10
Ta=25C
2000 1000 500
5V
2000 1000 500 200 100 50 20
-25C
200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 100 200
3V
10 0.2
0.5
1
2
5
10 20
50 100 200
50 100 200
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs. collector current ( )
Rev.A
2/3
2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S
Transistors
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV)
COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV)
1000 500 200 100 50 20 10 5 2 1 0.2 0.5 1 2 5 10 20
-25C Ta=100C 25C
IC / IB=10
10000 5000 2000 1000 500
50 IC/IB=10 20
Ta=25C
10000 5000 2000 1000 500
100C Ta= -25C 25C
IC/IB=10
200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 100 200
200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 100 200
50 100 200
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation voltage vs. collector current ( )
Fig.8 Base-emitter saturation voltage vs. collector current ( )
Fig.9 Base-emitter saturation voltage vs. collector current ( )
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000 500
TRANSITION FREQUENCY : fT (MHz)
1000 500 200 100
100
Ta=25C f=1MHz IE=0A
50 20 10
Ta=25C f=1kHz Vi=100mV(rms) RL=1k
200 100 50 20 10 5
Ta=25C VCE=5V 2 Measured 1 using pulse current -1 -2 -5 -10 -20
Ron : ()
50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100
5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
-50 -100-200 -500 -1000
EMITTER CURRENT : IE (mA)
COLLRCTOR TO BASE VOLTAGE : VCB (V)
IB (mA)
Fig.10 Gain bandwidth product vs. emitter current
Fig.11 Collector output capacitance vs. collector-base voltage
Fig.12 Output on resistance vs. base current
Rev.A
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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