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co . U Features t4 High speed switching ee Low on-resistance Sh No secondary breakdown ta Low driving power a High D voltage . VGS=35V Guarantee w Avalanche-proof w w
Applications
2SK2642-01MR m
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
TO-220F15
2.54
Switching regulators UPS DC-DC converters General purpose power amplifier
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 500 15 60 35 88.7 50 +150 -55 to +150 Unit V A A V mJ W C C
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Symbol V(BR)DSS VGS(th) IDSS
Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge
m o .c U t4 e e h S ta a .D w w w
Gate(G)
3. Source
Equivalent circuit schematic
Drain(D)
Source(S)
*1 L=0.72mH, Vcc=50V
Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS
Min.
Typ.
Max. Units
V V A mA nA S pF
500 3.5
IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr
VDS=500V VGS=0V VGS=35V VDS=0V ID=7.5A VGS=10V
Tch=25C Tch=125C
ID=7.5A VDS=25V VDS=25V VGS=0V f=1MHz
4.5
VCC=300V ID=15A VGS=10V RGS=10 L=100H Tch=25C IF=2xID VGS=0V Tch=25C IF=ID VGS=0V -di/dt=100A/s Tch=25C
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
om .c 4U et he aS at .D w w w
ns 15 1.1 500 8.0 1.65 A V ns C
4.0 4.5 10 500 0.2 1.0 10 100 0.44 0.55 9.0 1400 2100 250 380 110 170 30 50 110 170 90 140 55 90
Min.
Typ.
Max.
Units
2.50 62.5
C/W C/W
1
FUJI POWER MOSFET
Characteristics
Typical output characteristics ID=f(VDS):80s pulse test,Tc=25 C
40 VGS=20V 35 10V 30 8V 25 1.5 2.0
o
2SK2642-01MR
Drain-source on-state resistance RDS(on)=f(Tch):ID=7.5A,VGS=10V
RDS(on) [ ]
ID [A]
20 7V 15 6.5V
1.0
max.
typ. 10 0.5
6V 5 5.5V 0 0 5 10 15 20 25 30 5V 35 0.0 -50 0 50 100 150
o
VDS [V]
Tch [ C]
Typical transfer characteristic ID=f(VGS):80s pulse test,VDS=25V,Tch=25 C
o
Typical drain-source on-state resistance RDS(on)=f(ID):80s pulse test, Tc=25 C
4.0 VGS= 5V 3.5 5.5V 6.5V
o
6V
7V
10
1
3.0
2.5 10
0
RDS(on) []
0 1 2 3 4 5 6 7 8 9 10
ID [A]
2.0
1.5
10
-1
1.0
0.5
10
-2
0.0 0 5 10 15 20 25
VGS [ V ]
ID [ A ]
Typical forward transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25 C
o
Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS
6.0
5.0 10
1
max. 4.0 typ. min. 3.0
10
0
VGS(th) [V]
gfs [s]
2.0
1.0
10 10-1
-1
0.0 10
0
10
1
-50
0
50
100
o
150
ID [A]
Tch [ C ]
2
FUJI POWER MOSFET
Typical capacitances C=f(VDS):VGS=0V,f=1MHz
10n 400 Vcc=400V 350
2SK2642-01MR
Typical gate charge characteristic VGS=f(Qg):ID=15A,Tc=25 C
40
o
300 Ciss 1n 250 250V
0V 35 10 c= V Vc 250 V 0 40 30
25
VGS [V]
VDS [V]
C [F]
200
20
Coss 150 100p Crss 100 100V 10 15
50
5
10p -2 10
0 10
-1
10
0
10
1
10
2
0
20
40
60
80
100
120
140
160
0 180
VDS [V]
Qg [nC]
Forward characteristic of reverse of diode IF=f(VSD):80s pules test,VGS=0V
70
Power Dissipation PD=f(Tc)
60 10
1
Tch=25 C typ.
o
50
IF [A]
PD [W]
10
0
40
30
10
-1
20
10
10
-2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0
50
100
150
VSD [V]
Tc [ C ]
o
Safe operating area ID=f(VDS):D=0.01,Tc=25 C Transient thermal impedande Zthch=f(t) parameter:D=t/T
10
1
o
10
2
10 0.5 10
0
1
t=0.01s DC 1s 10s 100s
Zthch-c [K/W]
ID [A]
0.2 0.1 0.05 10
-1
10
0
1ms
0.02 10 0.01 0
-1
10ms 100ms
10 -5 10
-2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
0
10
1
10
2
10
3
t [s]
VDS [V]
3
FUJI POWER MOSFET
Avalanche energy derating Eas=f(starting Tch):Vcc=50V,IAV=15A
100
2SK2642-01MR
80
60
Eas [mJ]
40
20
0
0
50
o
100
150
Starting Tch [ C ]
4

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