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| Chip Silicon Rectifier HFM101 thru HFM108 Fast recovery type Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. PATENT PUBLICATION NO. 37116 SMA 0.185(4.8) 0.177(4.4) 0.012(0.3) Typ. 0.110(2.8) 0.094(2.4) 0.165(4.2) 0.150(3.8) 0.067(1.7) 0.060(1.5) 0.040(1.0) Typ. 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDE DO-214AC C Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.0015 ounce, 0.05 gram Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current CONDITIONS Ambient temperature = 50 C 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C o Symbol IO IFSM MIN. TYP. MAX. 1.0 30 5.0 150 UNIT A A uA uA o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR Rq JA CJ TJ -55 32 20 C/w pF +150 o C SYMBOLS MARKING CODE H11 H12 H13 H14 H15 H16 H17 H18 V RRM *1 V RMS *2 VR *3 VF *4 T RR *5 Operating temperature (o C) (V) HFM101 HFM102 HFM103 HFM104 HFM105 HFM106 HFM107 HFM108 50 100 200 300 400 600 800 1000 (V) 35 70 140 210 280 420 560 700 (V) 50 100 200 300 400 600 800 1000 (V) (nS) 1.0 50 *1 Repetitive peak reverse voltage 1.3 -55 to +150 *2 RMS voltage *3 Continuous reverse voltage 1.85 70 *4 Maximum forward voltage *5 Reverse recovery time RATING AND CHARACTERISTIC CURVES (HFM101 THRU HFM108) FIG.1-TYPICAL FORWARD CHARACTERISTICS AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 1.2 1.0 0.8 0.6 0.4 0.2 0 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 0.375"(9.5mm) Lead Length 10 HF M1 0 3 5 4~ HF M1 0 INSTANTANEOUS FORWARD CURRENT,(A) 1~ HF M1 0 HF M1 0 .1 Tj=25 C Pulse Width 300us 1% Duty Cycle H 1.0 FM 10 6~ H FM 10 8 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( C) .01 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,(A) 30 .001 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 24 FORWARD VOLT AGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE 18 Tj=25 C 8.3ms Single Half Sine Wave JEDEC method 12 6 (+) 25Vdc (approx.) () 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) D.U.T. () PULSE GENERATOR (NOTE 2) (+) 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. FIG.5-TYPICAL JUNCTION CAPACITANCE 175 trr +0.5A | | | | | | | | JUNCTION CAPACITANCE,(pF) 120 100 80 60 40 20 0 -0.25A -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm 0 .01 .05 .1 .5 1 5 10 50 100 REVERSE VOLTAGE,(V) |
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