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PD - 94083A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRG4BC15UD-S IRG4BC15UD-L
UltraFast CoPack IGBT
VCES = 600V
Features
* UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching * IGBT Co-packaged with ultra-soft-recovery antiparallel diode * Industry standard D2Pak & TO-262 packages
G E
VCE(on) typ. = 2.02V
@VGE = 15V, IC = 7.8A
Benefits
* Best Value for Appliance and Industrial Applications * High noise immune "Positive Only" gate driveNegative bias gate drive not necessary * For Low EMI designs- requires little or no snubbing * Single Package switch for bridge circuit applications * Compatible with high voltage Gate Driver IC's * Allows simpler gate drive
n-ch an nel
D2Pak IRG4BC15UD-S
TO-262 IRG4BC15UD-L
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Max.
600 14 7.8 42 42 4.0 16 20 49 19 -55 to +150 300 (0.063 in. (1.6mm) from case)
Units
V
A
V W C
Thermal Resistance
Parameter
RJC RJC RCS RJA RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount U Junction-to-Ambient (PCB Mount, steady state)V Weight
Min.
--- --- --- --- --- ---
Typ.
--- --- 0.50 --- --- 2 (0.07)
Max.
2.7 7.0 --- 80 40 ---
Units
C/W
g (oz)
www.irf.com
1
06/12/01
IRG4BC15UD-S/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES Parameter Collector-to-Emitter Breakdown VoltageS V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage Min. 600 --- --- --- --- Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage --- Forward TransconductanceT 4.1 Zero Gate Voltage Collector Current --- --- Diode Forward Voltage Drop --- --- Gate-to-Emitter Leakage Current --- Typ. --- 0.63 2.02 2.56 2.21 --- -10 6.2 --- --- 1.5 1.4 --- Max. Units Conditions --- V VGE = 0V, IC = 250A --- V/C VGE = 0V, IC = 1.0mA 2.4 IC = 7.8A VGE = 15V --- V IC = 14A --- IC = 7.8A, TJ = 150C 6.0 VCE = VGE, IC = 250A --- mV/C VCE = VGE, IC = 250A --- S VCE = 100V, IC = 7.8A 250 A VGE = 0V, VCE = 600V 1400 VGE = 0V, VCE = 600V, TJ = 150C 1.8 V IC = 4.0A 1.7 IC = 4.0A, TJ = 150C 100 nA VGE = 20V
VGE(th)
VGE(th)/TJ
gfe ICES VFM IGES
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. 23 4.0 9.6 17 20 160 83 0.24 0.26 0.50 16 21 180 220 0.76 7.5 410 37 5.3 28 38 2.9 3.7 40 70 280 240 Max. Units Conditions 35 IC = 7.8A 6.0 nC VCC = 400V 14 VGE = 15V --- TJ = 25C --- ns IC = 7.8A, VCC = 480V 240 VGE = 15V, R G = 75 120 Energy losses include "tail" and --- diode reverse recovery. --- mJ 0.63 --- TJ = 150C, --- ns IC = 7.8A, VCC = 480V --- VGE = 15V, R G = 75 --- Energy losses include "tail" and --- mJ diode reverse recovery. --- nH Measured 5mm from package --- VGE = 0V --- pF VCC = 30V --- = 1.0MHz 42 ns TJ = 25C 57 TJ = 125C IF = 4.0A 5.2 A TJ = 25C 6.7 TJ = 125C VR = 200V 60 nC TJ = 25C 110 TJ = 125C di/dt 200A/s --- A/s TJ = 25C --- TJ = 125C
IRG4BC15UD-S/L
12.00 Duty cycle : 50% Tj = 125C Tsink = 90C Ta = 55C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 11W for Heatsink Mount Power Dissipation = 1.8W for typical PCB socket Mount
10.00
Load Current ( A )
8.00
60% of rated voltage
6.00
4.00
Ideal diodes
2.00
0.00 0.1 1 10 100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
TJ = 150 C
10
10
TJ = 150 C
1
1
TJ = 25 C V = 15V 20s PULSE WIDTH
GE 1 10
TJ = 25 C
0.1 0.1
0.1 5.0
V = 50V 5s PULSE WIDTH
CC 10.0 15.0 20.0
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
IRG4BC15UD-S/L
14 12 10 8 6 4 2 0 25 50 75 100 125 150 4.0 VGE = 15V 80s PULSE WIDTH
Maximum DC Collector Current(A)
VCE , Collector-to Emitter Voltage (V)
IC = 14A
3.0
IC = 7.8A
2.0
IC = 3.9A
1.0 -60 -40 -20 0 20 40 60 80 100 120 140
TC , Case Temperature ( C)
T J , Junction Temperature (C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.001 0.01
P DM t1 t2 1
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRG4BC15UD-S/L
800
VGE, Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
600
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 7.8A
16
C ies
400
12
C oes
200
8
C res
0 1 10 100
4
0 0 5 10 15 20 25
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
0.48 VCC = 480V VGE = 15V TJ = 25C I C = 7.8A 0.46
10 RG = 75 VGE = 15V VCC = 480V IC = 14A
Total Switching Losses (mJ)
Total Switching Losses (mJ)
1
IC = 7.8A
0.44
IC = 3.9A
0.42 0 10 20 30 40 50
0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160
R G, Gate Resistance ( )
T J, Junction Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
IRG4BC15UD-S/L
2.0 RG = 75 TJ = 150C VGE = 15V VCC = 480V 100
VGE = 20V TJ = 125
Total Switching Losses (mJ)
1.6
1.2
C, Capacitance(pF)
SAFE OPERATING AREA
10
0.8
0.4
0.0 2 4 6 8 10 12 14 16
1 1 10 100 1000
IC , Collector Current (A)
VDS , Drain-to-Source Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
10
TJ = 150C TJ = 125C T = 25C
J
1
0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0
F orward V oltage D rop - V F M ) (V
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
IRG4BC15UD-S/L
50 14 VR = 20 0V T J = 1 25 C T J = 2 5C
45
I F = 8.0A I F = 4.0A
12
I F = 8.0A
10
40
I F = 4.0A
trr- (nC)
Irr- ( A)
8
35
6 30 4
25 VR = 2 00 V T J = 1 2 5C T J = 2 5 C 20 100 1000 2
di f /dt - (A/ s)
0 100
1000
di f /dt - (A/ s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200 VR = 2 00 V T J = 1 25C T J = 2 5C 160
Fig. 15 - Typical Recovery Current vs. dif/dt
1000 VR = 20 0V T J = 1 25 C T J = 2 5C
I F = 8.0A
I F = 8.0A
di (rec) M/dt- (A /s)
120
I F = 4.0A
I F = 4.0A
Qrr- (nC)
80 40
0 100
di f /dt - (A/ s)
1000
100 100
A 1000
di f /dt - (A/ s )
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
IRG4BC15UD-S/L
Same ty pe device as D .U.T. 90% Vge +Vge
V ce 80% of Vce 430F D .U .T. Ic 10% Vce Ic 5 % Ic td (o ff) tf 9 0 % Ic
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
E o ff =
t1 + 5 S V c e Ic Vceic d tdt t1
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg
trr Ic
Q rr =
trr id ddt Ic t tx
tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic
1 0 % Irr V cc
V pk Irr
D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4
E re c =
t4 V d idIc t dt Vd d t3
t1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
IRG4BC15UD-S/L
V g G AT E SIG NA L DE VIC E U ND E R T E ST CU R RE NT D .U .T.
VO L TA G E IN D.U .T.
CU R RE NT IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 600 0F 100V Vc* D.U.T.
RL= 0 - 480V
480V 4 X I C @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
IRG4BC15UD-S/L
D2Pak Package Outline
1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2
4.69 (.1 85) 4.20 (.1 65)
-B 1.3 2 (.05 2) 1.2 2 (.04 8)
1 0.16 (.4 00 ) RE F.
6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F.
1.7 8 (.07 0) 1.2 7 (.05 0)
1
3
3X
1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0)
0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M BAM
0.5 5 (.022 ) 0.4 6 (.018 )
M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )
NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E
8.89 (.3 50 ) 17 .78 (.70 0)
3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X
D2Pak Part Marking Information
A
IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E
PART NUM BER F530S 9 24 6 9B 1M
DATE CODE (Y YW W ) YY = Y E A R W W = W EEK
IRG4BC15UD-S/L
TO-262 Package Outline
TO-262 Part Marking Information
IRG4BC15UD-S/L
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4.1 0 (.1 6 1 ) 3.9 0 (.1 5 3 )
1 .6 0 (.06 3) 1 .5 0 (.05 9) 0.3 68 (.01 45 ) 0.3 42 (.01 35 )
F E ED D IR E C TIO N 1 .8 5 (.0 73 )
1 .6 5 (.0 65 )
1 1.6 0 (.45 7) 1 1.4 0 (.44 9)
15.4 2 (.60 9) 15.2 2 (.60 1)
2 4.30 (.9 5 7) 2 3.90 (.9 4 1)
TR L
1 0.90 (.42 9) 1 0.70 (.42 1) 1.75 (.06 9) 1.25 (.04 9) 16 .10 (.63 4) 15 .90 (.62 6) 4.72 (.1 3 6) 4.52 (.1 7 8)
F E E D D IR E C TIO N
13.50 (.532) 12.80 (.504)
2 7.40 (1.079) 2 3.90 (.941)
4
330 .00 (14.173) M AX .
60.00 (2.3 62) MIN .
NO T ES : 1. C OM F OR MS TO EIA-418. 2. C ON TR O LLING DIM ENS IO N: M ILLIM ETER . 3. D IME NSIO N M EAS URE D @ HUB . 4. IN CLU DE S F LAN GE DISTO RT IO N @ O U TER E DG E.
26 .40 (1.039) 24 .40 (.961)
30.40 (1.197) M AX. 4
3
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature. R VCC=80%(VCES), VGE=20V, L=10H, RG = 75 S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot. U This only applies to TO-262 package.
V This applies to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.06/01

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