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| MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF858/D NPN Silicon RF Power Transistor Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 - 960 MHz. * Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.6 Watts CW Minimum Power Gain = 11 dB Minimum ITO = + 44.5 dBm Typical Noise Figure = 6 dB * Characterized with Small-Signal S-Parameters and Series Equivalent Large-Signal Parameters from 800- 960 MHz * Silicon Nitride Passivated * 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.5 Adc and Rated Output Power * Will Withstand RF Input Overdrive of 0.85 W CW * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MRF858 MRF858S CLASS A 800 - 960 MHz 3.6 W (CW), 24 V NPN SILICON RF POWER TRANSISTOR CASE 319-07, STYLE 2 MRF858 CASE 319A-02, STYLE 2 MRF858S MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ TC = 50C Derate above 50C Operating Junction Temperature Storage Temperature Range Symbol VCEO VCBO VEBO PD TJ Tstg Characteristic Thermal Resistance (TJ = 150C, TC = 50C) Symbol RJC Symbol Min Typ Value 30 55 4 20 0.138 200 - 65 to +150 Unit Vdc Vdc Vdc Watts W/C C C THERMAL CHARACTERISTICS Max 6.9 Unit C/W ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 20 mA, IB = 0) Collector-Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) Collector-Base Breakdown Voltage (IC = 20 mA, IE = 0) Emitter-Base Breakdown Voltage (IE = 1 mA, IC = 0) Collector Cutoff Current (VCB = 24 V, IE = 0) Teflon is a registered trademark of du Pont de Nemours & Co., Inc. V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICES 28 55 55 4 -- 35 85 85 5 -- -- -- -- -- 1 Vdc Vdc Vdc Vdc mA (continued) Max Unit REV 2 (c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1995 MRF858 MRF858S 1 ELECTRICAL CHARACTERISTICS -- continued Characteristic ON CHARACTERISTICS DC Current Gain (IC = 0.1 A, VCE = 5 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, f = 1 MHz) FUNCTIONAL CHARACTERISTICS Common-Emitter Power Gain (VCE = 24 V, IC = 0.5 A, f = 840- 900 MHz, Power Output = 3.6 W) Load Mismatch (Po = 3.6 W) (VCE = 24 V, IC = 0.5 A, f = 840 MHz, Load VSWR = 30:1, All Phase Angles) RF Input Overdrive (VCE = 24 V, IC = 0.5 A, f = 840 MHz) No degradation Third Order Intercept Point (VCE = 24 V, IC = 0.5 A) (f1 = 900 MHz, f2 = 900.1 MHz, Meas. @ IMD 3rd Order = -40 dBc) Noise Figure (VCE = 24 V, IC = 0.5 A, f = 900 MHz) Input Return Loss (VCE = 24 V, IC = 0.5 A, f = 840- 900 MHz, Power Output = 3.6 W) Pg 11 12 -- dB Cob -- 6.5 8 pF hFE 30 60 120 -- Symbol Min Typ Max Unit No Degradation in Output Power Pin(over) -- -- 0.85 W ITO + 44.5 + 45.5 -- dBm NF IRL -- -- 6 - 12 -- -9 dB dB Table 1. MRF858 Common Emitter S-Parameters VCE (V) 24 IC (A) 0.5 f (MHz) 800 820 840 860 880 900 920 940 960 S11 |S11| 0.942 0.942 0.941 0.940 0.941 0.940 0.940 0.940 0.940 167 166 166 166 165 165 165 164 164 |S21| 1.493 1.453 1.415 1.379 1.351 1.320 1.289 1.252 1.222 S21 50 50 49 48 47 46 45 44 43 |S12| 0.027 0.027 0.028 0.028 0.029 0.030 0.030 0.031 0.031 S12 58 58 59 59 59 59 59 59 59 |S22| 0.538 0.541 0.545 0.550 0.553 0.557 0.562 0.566 0.570 S22 - 165 - 164 - 165 - 165 - 165 - 165 - 165 - 165 - 165 Table 2. Zin and ZOL* versus Frequency f (MHz) 840 870 900 1.1 1.1 1.2 Zin (Ohms) 2.9 3.5 3.5 9.9 9.5 9 ZOL* (Ohms) - 14.4 - 14.6 - 14.5 VCE = 24 V, IC = 0.5 A, Po = 3.6 W ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency. MRF858 MRF858S 2 MOTOROLA RF DEVICE DATA + R1 R8 VCE F1 V_SUPPLY C1 R2 Q1 Q2 R3 R4 R5 R7 C15 R6 + C2 B1 C3 C4 C7 L3 L4 TL1 C8 C9 DUT C11 TL4 C12 C10 C13 C14 C15 TL5 OUTPUT C16 C5 B2 + C6 L2 L1 INPUT TL2 TL3 0.685 B1, B2 C1 C2, C5 C3, C6 C4, C7 C8, C15 C9, C10 C11 C12, C13, C14 C15, C16 F1 L1, L2 L3 L4 Q1 Q2 Short Ferrite Bead, Fair Rite (2743021447) 250 F, 50 Vdc Electrolytic Capacitor 10 F, 50 Vdc Electrolytic Capacitor 0.1 F, Chip Capacitor 100 pF, Chip Capacitor 43 pF, 100 Mil Chip Capacitor 10 pF, Mini-Unelco 5 pF, Mini-Unelco 0.8 - 8.0 pF, Johanson Gigatrim 1000 pF, Chip Capacitor 1 A Micro-Fuse 10 Turns, 20 AWG, 0.150 ID (10 1/2 W Resistor) 4 Turns, 16 AWG, 0.101 ID 0.5 18 AWG Wire MMBT2222ALT1, NPN Transistor BD136, PNP Transistor R1 R2 R3 R4 R5 R6 R7 R8 TL1, TL5 TL2 TL3 TL4 V_Supply VCE Board 390 , 1/4 W 500 Potentiometer, 1/4 W 7.5K , 1/4 W 2 x 4.7K , 1/4 W 56 , 2 W 75 , 1/4 W 4.7 , 1/4 W 4 , 10 W 50 , Microstrip Transmission Line Microstrip Transmission Line Microstrip Transmission Line Microstrip Transmission Line + 26 Vdc 0.5 Vdc Due to Resistor Tolerance + 24 Vdc @ 0.5 A 0.030 Glass-Teflon(R) 2 oz. Cu, r = 2.55 Figure 1. MRF858 Class A RF Test Fixture Schematic MOTOROLA RF DEVICE DATA MRF858 MRF858S 3 TYPICAL CHARACTERISTICS 13.5 13 G pe , POWER GAIN (dB) Gpe 12.5 12 11.5 11 VSWR 10.5 830 840 850 860 870 880 f, FREQUENCY (MHz) 890 900 1 910 VCC = 24 Vdc IC = 500 mA Pout = 3.6 W (CW) 3 2.5 2 1.5 4 3.5 VSWR in , INPUT VSWR Figure 2. Performance in Broadband Circuit 7 Pout , OUTPUT POWER (WATTS) 6 5 4 3 Pout 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Pin, INPUT POWER (WATTS) 0.8 0.9 1 VCC = 24 Vdc IC = 500 mA f = 870 MHz Gpe 15 1 4 13 1 2 11 10 9 8 2000 G pe , POWER GAIN (dB) 1500 IC (mAdc) Tj = 150C Tf = 50C 1000 500 0 0 2 4 6 8 10 12 14 16 18 20 VCE (Vdc) 22 24 26 28 Figure 3. Output Power & Power Gain versus Input Power Figure 4. DC SOA 1100 1000 900 IC (mAdc) 800 700 600 50 00 Tj = 175C Tf = 50C MTBF FACTOR (HOURS x AMPS2) 1.00E+08 1.72E+07 1.00E+07 3.58E+06 8.57E+05 2.34E+05 1.00E+05 7.17E+04 2.43E+04 1.00E+04 8.98E+03 3.59E+03 1.53E+03 140 160 180 200 220 240 260 TJ, JUNCTION TEMPERATURE (C) 1.00E+06 2 4 6 8 10 12 14 16 18 20 22 24 26 28 VCE (Vdc) 1.00E+03 100 120 Figure 5. DC SOA (This device is MTBF limited for VCE < 20 Vdc.) Figure 6. MTBF Factor versus Junction Temperature MRF858 MRF858S 4 MOTOROLA RF DEVICE DATA R3 R2 R1 Q1 R5 R6 + C2 L1 R7 C15 R4 B2 B1 C4 C3 C8 C12 C11 C10 C13 C14 L3 C9 L4 C7 C16 C11 C15 L2 Q1 C6 C5 + R8 MRF858 Figure 7. MRF858 Test Fixture Component Layout MOTOROLA RF DEVICE DATA MRF858 MRF858S 5 PACKAGE DIMENSIONS -AL 6 5 4 Q 2 PL 0.15 (0.006) M IDENTIFICATION NOTCH TA M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. -N1 2 3 K F D 2 PL 0.38 (0.015) M B J H C E -TSEATING PLANE TA M M N M M 0.38 (0.015) TA N M STYLE 2: PIN 1. 2. 3. 4. 5. 6. DIM A B C D E F H J K L N Q INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 EMITTER (COMMON) BASE (INPUT) EMITTER (COMMON) EMITTER (COMMON) COLLECTOR (OUTPUT) EMITTER (COMMON) CASE 319-07 ISSUE M MRF858 IDENTIFICATION NOTCH 6 A 5 4 K B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.355 0.365 0.225 0.235 0.110 0.125 0.115 0.125 0.075 0.085 0.035 0.045 0.004 0.006 0.090 0.110 MILLIMETERS MIN MAX 9.02 9.27 5.72 5.96 2.80 3.17 2.93 3.17 1.91 2.15 0.89 1.14 0.11 0.15 2.29 2.79 1 2 3 F J D C H SEATING PLANE STYLE 2: PIN 1. 2. 3. 4. 5. 6. EMITTER BASE EMITTER EMITTER COLLECTOR EMITTER DIM A B C D F H J K CASE 319A-02 ISSUE B MRF858S Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF858 MRF858S 6 *MRF858/D* MRF858/D MOTOROLA RF DEVICE DATA |
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