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This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
DATE
DRAWN Feb.-21-'02
CHECKED Feb.-21-'02
CHECKED Feb.-21-'02
NAME
Date Spec. No. Type Name Device Name
APPROVED
:
: : :
SPECIFICATION
Feb.-21-2002
2SK3523-01R
Power MOSFET
MS5F5173
DWG.NO.
MS5F5173
Fuji Electric Co.,Ltd.
Fuji Electric Co.,Ltd. Matsumoto Factory
1 / 19
H04-004-05
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
Date
Feb.-21 2002
enactment
Classification Index
Revised Records
DWG.NO.
Fuji Electric Co.,Ltd.
Content
MS5F5173
Drawn Checked Checked Approved
2 / 19
H04-004-03
1.Scope 2.Construction 3.Applications 4.Outview
This specifies Fuji Power MOSFET 2SK3523-01R N-Channel enhancement mode power MOSFET for Switching TO-3PF Outview See to 8/19 page
5.Absolute Maximum Ratings at Tc=25 C (unless otherwise specified) Description Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche Current
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
Symbol VDS VDSX ID IDP VGS IAS EAS dVDS/dt dV/dt PD Tch Tstg VISO
Characteristics 500 500 21 84 30 21 400 20 5 3.125 120 150 -55 to +150 2
Unit V V A A V A mJ kV/s kV/s W C C kVrms
Remarks
VGS=-30V
Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation Voltage
L=1.67mH,Vcc=50V VDS<=500V *1 Ta=25C Tc=25C
t=60sec f=60Hz
*1 IF-ID,-di/dt=50A/s,VccBVDSS,Tch150C 6.Electrical Characteristics at Tc=25 C (unless otherwise specified) Static Ratings Description Drain-Source Breakdown Voltage BVDSS Gate Threshold Voltage VGS(th) Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Current IGSS Drain-Source On-State Resistance RDS(on) Symbol Conditions ID=250A VGS=0V ID=250A VDS=VGS VDS=500V Tch=25C VGS=0V VDS=400V Tch=125C VGS=0V VGS= 30V VDS=0V ID=10.5A VGS=10V
DWG.NO.
min.
typ.
max.
Unit
500 3.0 -
-
5.0 25
V V A
250
-
10
100
nA
-
0.20
0.26
Fuji Electric Co.,Ltd.
MS5F5173
3 / 19
H04-004-03
Dynamic Ratings Description Forward Transconductance gfs Input Capacitance Output Capacitance Reverse Transfer Capacitance Crss td(on) Turn-On Time tr td(off) Turn-Off Time Total Gate Charge
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
Symbol
Conditions ID=10.5A VDS=25V VDS=25V VGS=0V f=1MHz
min.
typ.
max.
Unit
11 -
22 2280 320 16
3420 480 24
S
Ciss Coss
pF
Vcc=300V VGS=10V ID=10.5A RGS=10 Vcc=300V ID=21A VGS=10V 27 37 75 11 54 16 20 41 56 113 17 81 24 30 nC ns
tf QG QGS QGD
Gate-Source Charge Gate-Drain Charge
Reverse Diode Description Avalanche Capability IAV Diode Forward On-Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Symbol Conditions L=1.67mH Tch=25C See Fig.1 and Fig.2 IF=21A VGS=0V IF=21A VGS=0V -di/dt=100A/ s Tch=25C 10.00 C 0.7 s Tch=25C 0.98 1.50 V 21 A min. typ. max. Unit
7.Thermal Resistance Description Channel to Case Channel to Ambient Rth(ch-c) Rth(ch-a) Symbol min. typ. max. 1.042 40.0 Unit C/W C/W
Fuji Electric Co.,Ltd.
MS5F5173
DWG.NO.
4 / 19
H04-004-03
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
Fig.1 Test circuit
Fig.2 Operating waveforms
-15V
0 50
D.U.T
DWG.NO.
Fuji Electric Co.,Ltd.
+10V IDP
L=1.67mH Vcc=50V Single Pulse Test
L
MS5F5173
BVDSS VGS
5 / 19
Vcc
ID
VDS
H04-004-03
8.Reliability test items All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs). Each categories under the guaranteed reliability conform to EIAJ ED4701 B101A standards. Test items required without fail : Test Method B-121,B-122,B-123,B-131,B-141 Humidification treatment (852C,655%RH,16824hr) Heat treatment of soldering (Solder Dipping,2605C(265Cmax.),101sec,2 times)
Test No. Test Items 1 Terminal Strength (Tensile) Testing methods and Conditions Reference Standard EIAJ ED4701 Sampling number Acceptance number
2 Terminal Strength (Bending)
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
3 Mounting Strength
4 Vibration
5 Shock
6 Solderability
7 Resistance to Soldering Heat
Pull force TO-220,TO-220F : 10N TO-3P,TO-3PF,TO-247 : 25N TO-3PL : 45N T-Pack,K-Pack : 10N Force maintaining duration :305sec Load force TO-220,TO-220F : 5N TO-3P,TO-3PF,TO-247 : 10N TO-3PL : 15N T-Pack,K-Pack : 5N Number of times :2times(90deg./time) Screwing torque value: (M3) TO-220,TO-220F : 4010N TO-3P,TO-3PF,TO-247 : 5010N TO-3PL : 7010N frequency : 100Hz to 2kHz 2 Acceleration : 100m/s Sweeping time : 20min./1 cycle 6times for each X,Y&Z directions. 2 Peak amplitude: 15km/s Duration time : 0.5ms 3times for each X,Y&Z directions. Solder temp. : 2355C Immersion time : 50.5sec Each terminal shall be immersed in the solder bath within 1 to 1.5mm from the body. Solder temp. : 2605C Immersion time : 101sec Number of times : 2times
A-111A method 1
15
A-111A method 3
15
Mechanical test methods
(0:1)
A-112 method 2 15
A-121 test code C A-122 test code D
15
15
A-131A test code A
15
A-132
15
Fuji Electric Co.,Ltd.
MS5F5173
DWG.NO.
6 / 19
H04-004-03
Test No.
Test Items 1 High Temp. Storage 2 Low Temp. Storage 3 Temperature Humidity Storage 4 Temperature Humidity BIAS 5 Unsaturated Pressurized Vapor 6 Temperature Cycle
Testing methods and Conditions
Climatic test methods
Temperature : 150+0/-5C Test duration : 1000hr Temperature : -55+5/-0C Test duration : 1000hr Temperature : 852C Relative humidity : 855% Test duration : 1000hr Temperature : 852C Relative humidity : 855% Bias Voltage : VDS(max) * 0.8 Test duration : 1000hr Temperature : 1302C Relative humidity : 855% Vapor pressure : 230kPa Test duration : 96hr High temp.side : 1505C Low temp.side : -555C Duration time : HT 30min,LT 30min Number of cycles : 100cycles Fluid : pure water(running water) High temp.side : 100+0/-5C Low temp.side : 0+5/-0C Duration time : HT 5min,LT 5min Number of cycles : 100cycles Ta=255C Tc=90degree TchTch(max.) Test duration : 3000 cycle Temperature : 150+0/-5C Bias Voltage : VGS(max) Test duration : 1000hr Temperature : 150+0/-5C Bias Voltage : VDS(max) Test duration : 1000hr
Reference Standard EIAJ ED4701 B-111A B-112A B-121A test code C
Sampling number 22 22
Acceptance number
22
B-122A test code C
22
(0:1)
B-123A test code C 22
B-131A test code A
22
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
7 Thermal Shock
B-141A test code A
22
Test for FET
1 Intermittent Operating Life 2 HTRB (Gate-source) 3 HTRB (Drain-Source)
D-322
22
D-323
22
(0:1)
D-323
22
Failure Criteria Symbols Item Breakdown Voltage BVDSS IDSS IGSS VGS(th) RDS(on) gfs VSD ----Failure Criteria Lower Limit Upper Limit LSL * 0.8 --------LSL * 0.8 ----LSL * 0.8 --------USL * 2 USL * 2 USL * 1.2 USL * 1.2 ----USL * 1.2 Unit V A A V S V -----
Electrical Characteristics Outview
Zero gate Voltage Drain-Source Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source on-state Resistance Forward Transconductance Diode forward on-Voltage Marking Soldering
With eyes or Microscope
and other damages * LSL : Lower Specification Limit * USL : Upper Specification Limit * Before any of electrical characteristics measure, all testing related to the humidity have conducted after drying the package surface for more than an hour at 150C.
Fuji Electric Co.,Ltd.
MS5F5173
DWG.NO.
7 / 19
H04-004-03
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
DWG.NO.
Fuji Electric Co.,Ltd.
MS5F5173
8 / 19
H04-004-03
9 Warning 9.1. Although Fuji Electric is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 9.2. The products introduced in this Specification are intended for use in the following electronic and electrical equipment witch has normal reliability requirements. * Computers OA equipments * Measurement equipments * Electrical home appliances * Communications equipment (Terminal devices) * Machine tools * AV equipments * Personal equipments * Industrial robots
etc...
9.3. If you need to use a product in this Specification for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
* Transportation equipment (Automotives, Locomotives and ships etc...) * Backbone network equipment * Traffic-signal control equipment * Gas alarm, Leakage gas auto breaker * Burglar alarm, Fire alarm, Emergency equipments etc... 9.4. Don't use products in this Specification for the equipment requiring strict reliability such as (without limitation) * Aerospace equipment * Aeronautic equipment * nuclear control equipment * Medical equipment * Submarine repeater equipment 10. General Notice 10.1. Preventing ESD Damage Although the gate oxide of Fuji Power MOSFETs is much higher ruggedness to ESD damage than small-Signal MOSFETs and CMOS ICs, careful handling of any MOS devices are an important consideration. 1) When handling MOSFETs, hold them by the case (package) and don't touch the leads and terminals. 2) It is recommended that any handling of MOSFETs is done while used electrically conductive floor and tablemats that are grounded. 3) Before touching a MOSFETs terminal, discharge any static electricity from your body and clothes by grounding out through a high impedance resistor (about 1M) 4) When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or soldering bath through a low impedance resistor.
Fuji Electric Co.,Ltd.
MS5F5173
DWG.NO.
9 / 19
H04-004-03
10.2. Short mode failure / Open mode failure The MOSFETs may be in the risk of having short mode failure or open mode failure when the applied over voltage, over current or over temperature each specified maximum rating. It is recommended to use the fail-safe equipment or circuit from such possible failures. 10.3. An Electric shock / A Skin burn You may be in risk for an Electric shock or a Skin burn for directly touching to the leads or package of the MOSFETs while turning on electricity or operating. 10.4. Smoke / Fire Fuji MOSFETs are made of incombustibility material. However, a failure of the MOSFETs may emit smoke or fire. Also, operating the MOSFETs near any flammable place or material may risk the MOSFETs to emit smoke or fire due to the MOSFETs reach high temperature while operated. 10.5. Corrosion / Erosion Avoid use or storage of the MOSFETs under the higher humidity, corrosive gases. It will lead the device to corrode and possibly cause the device to fail.
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
10.6. Radiation field Don't use of the device under the radiation field since the device is not designed for radiation proofing. 11. Notes for Design 11.1. You must design the MOSFETs to be operated within specified maximum ratings (Voltage, Current, Temperature etc...) which are imperative to prevent possible failure or destruction of the device. 11.2. We recommend to use the protection equipment or safety equipment such as fuse, breaker to prevent the fire or damage in case of unexpected accident may have occurred. 11.3. You must design the MOSFETs within it's reliability and lifetime in certain the environment or condition. There is a risk that MOSFETs breakdown earlier than the target lifetime of the your products when MOSFETs was used in the reliability condition excessively. Especially avoid use of the MOSFETs under the higher humidity, corrosive gases. 11.4. We recommend to consider for the temperature rise not only for the Channel but also for the Leads if it designed to large current operation to the MOSFETs. 11.5. We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous Avalanche capability which can be assumed as abnormal condition. Please note the device may be destructed from the Avalanche over the specified maximum rating.
Fuji Electric Co.,Ltd.
MS5F5173
DWG.NO.
10 / 19
H04-004-03
12. Note on implementation 12.1. Soldering Soldering involves temperatures witch exceed the device storage temperature rating. To avoid device damage and to ensure reliability, the following guidelines from the quality assurance standard must be observed. 1) Solder temperature and duration (Through-Hole Package) Solder temperature Duration 2605 C 101 seconds 35010 C 3.50.5 seconds 2) The device should not be soldered closer than 1mm from the package. (* through-hole package) 3) When flow soldered, care must be taken to Avoid immersing the package in the solder-bath. 12.2. Please see to the following the Torque reference when mounting the device to heat sink. Excess torque applied to the mounting screw causes damage to the device and weak torque will increase the thermal resistance. Both of these conditions may lead the device to be destructed.
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
Table 1 : Recommended tightening torques. Package style TO-220 TO-220F TO-3P TO-3PF TO-247 TO-3PL Screw M3 M3 M3 Recommended tightening torques 30 - 50 Ncm 40 - 60 Ncm 60 -80 Ncm
12.3. If the heat sink with coarse finish is used, increase in thermal resistance and concentrated force to a point may cause the MOSFETs to be destructed. We recommend in such condition to process the surface of heat sink within 50m and use of thermal compound to optimize its efficiency of heat radiation. Moreover, it is important to evenly apply the compound and eliminate any air voids. A simple method is to apply a dot of compound of the appropriate quantity to the center of the case just below the chip mount.
Fuji Electric Co.,Ltd.
MS5F5173
DWG.NO.
11 / 19
H04-004-03
13.Notes for Storage 13.1. The MOSFETs should be stored at a standard temperature of 5 to 35 C and humidity of 45 to 75%RH. If the storage area is very dry, a humidifier may be required. In such a case, use only deionized water or boiled water, since the chlorine in tap water may corrode the leads. 13.2. Avoid exposure to corrosive gases and dust. 13.3. Rapid temperature changes may cause condensation on the MOSFETs surface. Therefore, store the MOSFETs in a place with few temperature changes. 13.4. While in storage, it is important that nothing be loaded on top of the MOSFETs, since this may cause excessive external force on the case. 13.5. Store MOSFETs with unprocessed lead terminals. Rust may cause presoldered connections to go bad during later processing. 13.6. Use only antistatic containers or shipping bag for storing MOSFETs.
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
14. Additional points If you have any question about any portion in this Specification, ask Fuji Electric or its sales agents before using the product. Neither Fuji nor its agents shall be liable for any injury caused bay any use of the products not in accordance with instructions set forth herein.
Fuji Electric Co.,Ltd.
MS5F5173
DWG.NO.
12 / 19
H04-004-03
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
ID [A]
20 40 60 80 0
PD [W] 100 120 140
10
15
20
25
30
35
40
45
50
55
0
0 25
5
0
2
4
6
Tc [C]
Allowable Power Dissipation PD=f(Tc)
Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25C
10 12 VDS [V]
DWG.NO.
Fuji Electric Co.,Ltd.
50 75 100 125
8 8V 20V 10V 6.5V 7.0V
14
VGS=5.5V
16
6.0V
18
MS5F5173
150
20
13 / 19
H04-004-03
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
gfs [S]
10 0.1 1
ID[A] 100
100
10
0.1
0 1 2 3
1
0.1
DWG.NO.
Fuji Electric Co.,Ltd.
4 5 VGS[V] 6 7 8 9
1
ID [A]
10
10
Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C
Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C
MS5F5173
100
14 / 19
H04-004-03
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C
0.6
0.5
VGS= 5.5V
6.0V
6.5V 7.0V
0.4 RDS(on) [ ] 8V 0.3 10V 20V
0.2
0.1
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
0.0 0 5 10 15 20 25 30 35 40 45 50 55 ID [A]
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=10.5A,VGS=10V
0.7
0.6
0.5
RDS(on) [ ]
0.4 max. 0.3
0.2
typ.
0.1
0.0 -50 -25 0 25 50 Tch [C]
DWG.NO.
75
100
125
150
Fuji Electric Co.,Ltd.
MS5F5173
15 / 19
H04-004-03
7.0 6.5 6.0 5.5 5.0 VGS(th) [V] 4.5 4.0 3.5 3.0 2.5 2.0 1.5
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 A
max.
min.
1.0 0.5 0.0 -50 -25 0 25 50 75 Tch [C] 100 125 150
Typical Gate Charge Characteristics VGS=f(Qg):ID=21A,Tch=25C
24 22 20 18
Vcc= 100V Vcc= 250V
16 14 VGS [V] 12 10 8 6 4 2 0 0 20 40 60 Qg [nC] 80
Vcc= 400V
100
120
Fuji Electric Co.,Ltd.
MS5F5173
DWG.NO.
16 / 19
H04-004-03
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
C [nF]
IF [A]
10 10 10 10 10
100
10
1
-3 -2 -1
0
1
10
-1
0.1 0.00
10
0
0.25
0.50
VDS [V]
DWG.NO.
1
Fuji Electric Co.,Ltd.
10 10
2
0.75
1.00
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
VSD [V]
10
3
1.25
1.50
Ciss
Crss
Coss
1.75
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C
MS5F5173
2.00
17 / 19
H04-004-03
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
EAV [mJ]
t [ns] 10 10 10
10
100
150
200
250
300
350
400
450
500
50
0 1
0
10
-1
2
3
0
tr td(on)
25
ID [A]
DWG.NO.
Fuji Electric Co.,Ltd.
10
0
50
10
1
75
tf
Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=21A
starting Tch [C]
10
2
td(off)
100
125
MS5F5173
150
18 / 19
H04-004-03
This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd.
Zth(ch-c) [/W]
Avalanche Current I AV [A] 10 10
0 1
100
101
10-3
10 10
-2 -1
10-2
10
-8
10-1
10
2
10-6
10
Single Pulse
-7
10-5
10
-6
10-4
DWG.NO.
Fuji Electric Co.,Ltd.
10
-5
10-3
tAV [sec] 10
-4
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=50V
Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T,D=0
t [sec]
10
-3
10-2
10-1
MS5F5173
10
100
-2
19 / 19
H04-004-03

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