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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MDC3105LT1/D Advance Information Integrated Relay/Solenoid Driver * Optimized to Switch 3 V to 5 V Relays from a 5 V Rail * Compatible with "TX'' and "TQ'' Series Telecom Relays Rated up to 300 mW at 3 V to 5 V * Features Low Input Drive Current * Internal Zener Clamp Routes Induced Current to Ground Rather Than Back to Supply * Guaranteed Off State with No Input Connection * Supports Large Systems with Minimal Off-State Leakage * ESD Resistant in Accordance with the 2000 V Human Body Model * Provides a Robust Driver Interface Between Relay Coil and Sensitive Logic Circuits Applications include: * Telecom Line Cards and Telephony * Industrial Controls * Security Systems * Appliances and White Goods * Automated Test Equipment * Automotive Controls This device is intended to replace an array of three to six discrete components with an integrated SMT part. It is available in a SOT-23 package. It can be used to switch other 3 to 5 Vdc Inductive Loads such as solenoids and small DC motors. MAXIMUM RATINGS Rating Power Supply Voltage Recommended Operating Supply Voltage Input Voltage Reverse Input Voltage Output Sink Current Continuous Junction Temperature Operating Ambient Temperature Range Storage Temperature Range Symbol VCC VCC Vin(fwd) Vin(rev) IO TJ TA Tstg MDC3105LT1 Motorola Preferred Device RELAY/SOLENOID DRIVER SILICON MONOLITHIC CIRCUIT BLOCK 3 1 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) INTERNAL CIRCUIT DIAGRAM Vout Vin 1.0 k 6.8 V (1) 33 k GND (2) (3) Value 6.0 2.0-5.5 6.0 -0.5 300 150 -40 to +85 -65 to +150 Unit Vdc Vdc Vdc Vdc mA C C C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation(1) Derate above 25C Thermal Resistance Junction to Ambient 1. FR-5 PCB of 1 x 0.75 x 0.062, TA = 25C Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. This document contains information on a new product. Specifications and information herein are subject to change without notice. Symbol PD RqJA Max 225 556 Unit mW C/W (c) Motorola, Small-Signal Transistors, FETs and Diodes Device Data Motorola Inc. 1996 1 MDC3105LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Output Zener Breakdown Voltage (@ IT = 10 mA Pulse) Output Leakage Current @ 0 Input Voltage (Vout = 5.5 Vdc, Vin = O.C., TA = 25C) (Vout = 5.5 Vdc, Vin = O.C., TA = 85C) V(BRout) V(-BRout) IOO -- -- -- -- 5.0 30 6.4 -- 6.8 -0.7 7.2 -- V A ON CHARACTERISTICS Input Bias Current @ Vin = 4.0 Vdc (IO = 250 mA, Vout = 0.4 Vdc, TA = -40C) (correlated to a measurement @ 25C) Output Saturation Voltage (IO = 250 mA, Vin = 4.0 Vdc, TA = -40C) (correlated to a measurement @ 25C) Output Sink Current Continuous (TA = -40C, VCE = 0.4 Vdc, Vin = 4.0 Vdc ) (correlated to a measurement @ 25C) IC(on) 250 -- -- Iin -- 2.5 -- Vdc -- 0.2 0.4 mA mAdc TYPICAL APPLICATION-DEPENDENT SWITCHING PERFORMANCE SWITCHING CHARACTERISTICS Characteristic Propagation Delay Times: High to Low Propagation Delay; Figures 1, 2 (5.0 V 74HC04) Low to High Propagation Delay; Figures 1, 2 (5.0 V 74HC04) High to Low Propagation Delay; Figures 1, 3 (3.0 V 74HC04) Low to High Propagation Delay; Figures 1, 3 (3.0 V 74HC04) High to Low Propagation Delay; Figures 1, 4 (5.0 V 74LS04) Low to High Propagation Delay; Figures 1, 4 (5.0 V 74LS04) Transition Times: Fall Time; Figures 1, 2 (5.0 V 74HC04) Rise Time; Figures 1, 2 (5.0 V 74HC04) Fall Time; Figures 1, 3 (3.0 V 74HC04) Rise Time; Figures 1, 3 (3.0 V 74HC04) Fall Time; Figures 1, 4 (5.0 V 74LS04) Rise Time; Figures 1, 4 (5.0 V 74LS04) Input Slew Rate(1) Symbol tPHL tPLH tPHL tPLH tPHL tPLH tf tr tf tr tf tr V/t in VCC 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 5.5 Min -- -- -- -- -- -- -- -- -- -- -- -- TBD Typ 55 430 85 315 55 2385 45 160 70 195 45 2400 -- Max -- -- -- -- -- -- ns -- -- -- -- -- -- -- V/ms Units ns 1. Minimum input slew rate must be followed to avoid overdissipating the device. tf 90% 50% 10% tPLH 90% 50% 10% tTHL tTLH tPHL tr VCC GND VZ VCC GND Vin Vout Figure 1. Switching Waveforms 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data MDC3105LT1 +4.5 VCC +5.5 Vdc ++ AROMAT TX2-L2-3 V Vout (3) MDC3105LT1 Vin (1) 1k 6.8 V 33 k 6.8 V Vout (3) MDC3105LT1 1k 33 k Vin (1) 74HC04 OR EQUIVALENT 74HC04 OR EQUIVALENT GND (2) GND (2) Figure 2. A 3.0-V, 200-mW Dual Coil Latching Relay Application with 5.0 V-HCMOS Interface +3.0 VDD +3.75 Vdc +4.5 VCC +5.5 Vdc ++ AROMAT TX2-L2-3 V Vout (3) MDC3105LT1 Vin (1) 1k 6.8 V 33 k 6.8 V Vout (3) MDC3105LT1 1k 33 k Vin (1) 74HC04 OR EQUIVALENT 74HC04 OR EQUIVALENT GND (2) GND (2) Figure 3. A 3.0-V, 200-mW Dual Coil Latching Relay Application with 3.0 V-HCMOS Interface Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 MDC3105LT1 +4.5 VCC +5.5 Vdc ++ AROMAT TX2-L2-3 V Vout (3) MDC3105LT1 BAL99LT1 1k 6.8 V 33 k Vin (1) 6.8 V Vout (3) MDC3105LT1 1k 33 k Vin (1) BAL99LT1 74LS04 74LS04 GND (2) GND (2) Figure 4. A 3.0-V, 200-mW Dual Coil Latching Relay Application with TTL Interface +4.5 TO +5.5 Vdc + AROMAT R1 TX2-5 V - R2 + AROMAT TX2-5 V - Max Continuous Current Calculation R1 = R2 = 178 Nominal @ TA = 25C Vout (3) Assuming 10% Make Tolerance, R1 = R2 = (178 ) (0.9) = 160 Min @ TA = 25C 74HC04 OR EQUIVALENT Vin (1) N Io TC for Annealed Copper Wire is 0.4%/C R1 = R2 = (160 ) [1+(0.004) (-40-25)] = 118 Min @ -40C R1 in Parallel with R2 = 59 Min @ -40C - + 5.5 V59Max Min0.4 V + 86 mA Max W 86 mA 300 mA Max Io spec. GND (2) Figure 5. Typical 5.0 V, 140 mW Coil Dual Relay Application 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data MDC3105LT1 TYPICAL OPERATING WAVEFORMS (Circuit of Figure 5) 4.5 225 3.5 V in (VOLTS) IC (mA) 10 30 50 TIME (ms) 70 90 175 2.5 125 1.5 75 500M 25 10 30 50 TIME (ms) 70 90 Figure 6. 20 Hz Square Wave Input Figure 7. 20 Hz Square Wave Response 9 172 7 Vout (VOLTS) IZ (mA) 10 30 50 TIME (ms) 70 90 132 5 92 3 52 1 12 10 30 50 TIME (ms) 70 90 Figure 8. 20 Hz Square Wave Response Figure 9. 20 Hz Square Wave Response 600 500 400 hFE 300 200 100 0 1 10 100 Io, OUTPUT SINK CURRENT (mA) 1000 Vo = 1.0 V Vo = 0.25 V TJ = 85C TJ = 25C TJ = 125C 1 TJ = 25C 0.8 OUTPUT VOLTAGE (V) 0.6 1 0.4 10 50 175 125 250 IC = 350 mA TJ = - 40C 0.2 0 1E-5 1E-4 1E-3 INPUT CURRENT 1E-2 Figure 10. Pulsed Current Gain Motorola Small-Signal Transistors, FETs and Diodes Device Data Figure 11. Collector Saturation Region 5 MDC3105LT1 INFORMATION FOR USING THE SOT-23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT-23 SOT-23 POWER DISSIPATION The power dissipation of the SOT-23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT-23 package, PD can be calculated as follows: PD = TJ(max) - TA RJA SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150C - 25C 556C/W = 225 milliwatts The 556C/W for the SOT-23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data MDC3105LT1 PACKAGE DIMENSIONS A L 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. BS 1 2 V G C D H K J DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR CASE 318-08 ISSUE AE Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 MDC3105LT1 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 8 Motorola Small-Signal Transistors, FETs and Diodes MDC3105LT1/D Device Data *MDC3105LT1/D* |
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