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| VCR11N Linear Integrated Systems FEATURES SECOND SOURCE FOR SILICONIX VCR11N VOLTAGE CONTROLLED RESISTANCE ABSOLUTE MAXIMUM RATINGS @ 25 C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Current Forward Gate Current Maximum Voltages Gate to Drain Voltage Gate to Source Voltage 25V 25V *Contact the factory for surface mount package options and pin outs. 10mA 300mW -65 to +150 C -55 to +135 C 1 N-CHANNEL JFET VOLTAGE CONTROLLED RESISTOR 100 to 200 TO-71 BOTTOM VIEW G1 D1 S1 2 3 5 6 S2 D2 G2 1 7 ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated) SYMBOL BVGSS VGS(off) IGSS rds(on) rDS(min) rDS(max) Cdgo Csgo CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Cutoff Voltage Gate Reverse Current Dynamic Drain to Source On Resistance Static Drain to Source On Resistance Ratio Drain to Gate Capacitance Source to Gate Capacitance MIN -25 -8 100 0.95 0.95 -12 -0.2 200 1 1 8 8 pF pF TYP MAX UNITS V nA CONDITIONS IG = -1A, VDS = 0V ID = 1A, VDS = 10V VGS = -15V, VDS = 0V VGS = 0V, ID = 0A, f = 1kHz VDS = 100mV, rDS = 2002 VGS1 = VGS2, rDS = 2k2 VGD = -10V, IS = 0A, f = 1MHz VGS = -10V, ID = 0A, f = 1MHz 1. 2. Absolute maximum ratings are limiting values above which serviceability may be impaired. VGS1 + Control Voltage necessary to force rDS to 200 or 2k. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems * 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 |
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