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| BCW 67, BCW 68 PNP General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Peak Collector current - Kollektor-Spitzenstrom Base current - Basis-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IB - IBM Tj TS Grenzwerte (TA = 25/C) BCW 67 32 V 45 V 5V 250 mW 1) 800 mA 1000 mA 100 mA 200 mA 150/C - 65...+ 150/C BCW 68 45 V 60 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 32 V IE = 0, - VCB = 32 V, Tj = 150/C IE = 0, - VCB = 45 V IE = 0, - VCB = 45 V, Tj = 150/C IC = 0, - VEB = 4 V BCW 67 BCW 68 - ICB0 - ICB0 - ICB0 - ICB0 - IEB0 - - - - - Kennwerte (Tj = 25/C) Typ. - - - - - Max. 20 nA 20 :A 20 nA 20 :A 20 nA Emitter-Base cutoff current - Emitterreststrom 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 44 General Purpose Transistors Characteristics (Tj = 25/C) Min. Collector saturation volt. - Kollektor-Sattigungsspg. 1) - IC = 100 mA, - IB = 10 mA - IC = 500 mA, - IB = 50 mA - IC = 100 mA, - IB = 10 mA - IC = 500 mA, - IB = 50 mA BCW 67A / 68F BCW 67B / 68G BCW 67C / 68H BCW 67A / 68F BCW 67B / 68G BCW 67C / 68H BCW 67A / 68F BCW 67B / 68G BCW 67C / 68H BCW 67A / 68F BCW 67B / 68G BCW 67C / 68H - VCEsat - VCEsat - VBEsat - VBEsat hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE hFE fT CCB0 CEB0 - - - - 35 50 80 75 120 180 100 160 250 35 60 100 - - - RthA BCW 67, BCW 68 Kennwerte (Tj = 25/C) Typ. - - - - - - - - - - 160 250 350 - - - 200 MHz 6 pF 60 pF Max. 300 mV 700 mV 1.25 V 2V - - - - - - 250 400 630 - - - - - - 420 K/W 2) BCW 65, BCW 66 BCW 67B = DB BCW 68G = DG BCW 67C = DC BCW 68H = DH Base saturation voltage - Basis-Sattigungsspannung 1) DC current gain - Kollektor-Basis-Stromverhaltnis 1) - VCE = 10 V - IC = 100 : mA - VCE = 1 V - IC = 10 mA - VCE = 1 V - IC = 100 mA - VCE = 2 V - IC = 500 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 50 mA, f = 100 MHz - VCB = 10 V, IE = ie = 0, f = 1 MHz - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN-transistors Empfohlene komplementare NPN-Transistoren Marking - Stempelung BCW 67A = DA BCW 68F = DF Collector-Base Capacitance - Kollektor-Basis-Kapazitat Emitter-Base Capacitance - Emitter-Basis-Kapazitat ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 45 |
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