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| DSSK 60-0045A Power Schottky Rectifier with common cathode IFAV = 2x30 A VRRM = 45 V VF = 0.60 V VRSM V 45 VRRM V 45 Type A C A TO-247 AD DSSK 60-0045A A C A C (TAB) A = Anode, C = Cathode , TAB = Cathode Symbol IFRMS IFAV IFAV IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot Md Weight Symbol IR VF Conditions TC = 150C; rectangular, d = 0.5 TC = 150C; rectangular, d = 0.5; per device TVJ = 45C; tp = 10 ms (50 Hz), sine IAS = 18 A; L = 180 H; TVJ = 25C; non repetitive VA =1.5 * VRRM typ.; f=10 kHz; repetitive Maximum Ratings 70 30 60 500 46 1.8 1000 -55...+175 175 -55...+150 A A A A mJ A V/ms C C C W Nm g Features * International standard package * Very low VF * Extremely low switching losses * Low IRM-values * Epoxy meets UL 94V-0 Applications * Rectifiers in switch mode power supplies (SMPS) * Free wheeling diode in low voltage converters TC = 25C mounting torque typical Conditions TVJ = 25C VR = VRRM TVJ = 125C VR = VRRM IF = 30 A; IF = 30 A; IF = 60 A; TVJ = 125C TVJ = 25C TVJ = 125C 0.25 135 0.8...1.2 6 Advantages * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses Characteristic Values typ. max. 1 10 0.60 0.69 0.74 1.1 mA mA V V V K/W K/W Dimensions see outlines.pdf RthJC RthCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, Conditions and dimensions. 232 (c) 2002 IXYS All rights reserved 1-2 DSSK 60-0045A 100 A IF IR 100 mA TVJ=175C 10000 pF CT 10 150C 1 125C 10 TVJ = 175C 150C 125C 25C 100C 1000 0.1 75C 0.01 50C 25C TVJ= 25C 1 0.0 0.001 0.2 0.4 0.6 VF 0.8 V 1.0 0 10 20 30 40 V 50 VR 100 0 10 20 30 VR 40 V Fig. 1 Maximum forward voltage drop characteristics 80 A 70 IF(AV) 60 50 40 30 20 10 0 0 40 80 120 TC 160C d=0.5 DC Fig. 2 Typ. value of reverse current IR versus reverse voltage VR 60 W 50 P(AV) 40 30 20 10 0 0 10 20 30 40 50 IF(AV) 60 A d= DC 0.5 0.33 0.25 0.17 0.08 Fig. 3 Typ. junction capacitance CT versus reverse voltage VR 10000 A IFSM 1000 100 10 100 1000 s 10000 tP Fig. 4 Average forward current IF(AV) versus case temperature TC Fig. 5 Forward power loss characteristics 1 K/W ZthJC D=0.5 0.33 0.25 0.17 0.08 0.1 Single Pulse (Thermal Resistance) 0.01 0.0001 DSSK 60-0045A 0.001 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case at various duty cycles Note: All curves are per diode 232 (c) 2002 IXYS All rights reserved 2-2 |
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