![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
FJE3303 FJE3303 High Voltage Switch Mode Applications * High Speed Switching * Suitable for Electronic Ballast and Switching Regulator 1 TO-126 2.Collector 3.Base 1. Emitter NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Power Dissipation(Ta=25C) Junction Temperature Storage Temperature Value 700 400 9 1.5 3 0.75 1.5 20 150 - 65 ~ 150 Units V V V A A A A W C C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics Ta=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current *DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC=500A, IE=0 IC=5mA, IB=0 IE=500A, IC=0 VCB=700V, IE=0 VEB=9V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=1.0A IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A IC=1.5A, IB=0.5A VBE (sat) fT tON tSTG tF Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A VCE=10V, IC=0.1A VCC=125V, IC=1A, IB1=0.2A, IB2=-0.2A, RL = 125 4 1.1 4.0 0.7 8 5 0.5 1.0 3.0 1.0 1.2 V V V V V MHz s s s Min. 700 400 9 10 10 21 Typ. Max. Units V V V A A * Pulse test: PW300s, Duty Cycle2% hFE Classification Classification hFE1 (c)2004 Fairchild Semiconductor Corporation R 8 ~ 16 O 14 ~ 21 Rev. A, March 2004 FJE3303 Typical Characteristics (Continued) 1.6 1.4 100 VCE = 2V Ta = 125 C o IC [A], COLLECTOR CURRENT Ta = 75 C o 1.0 0.8 hFE, DC CURRENT GAIN 1.2 IB = 120 mA Ta = - 25 C 10 o Ta = 25 C o IB = 40 mA IB = 20 mA 0.6 0.4 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10 1 1E-3 0.01 0.1 1 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 VCE(sat) [V], SATURATION VOLTAGE Ta = 25 C o 1 Ta = - 25 C o VBE(sat) [V], SATURATION VOLTAGE IC = 4 IB Ta = 125 C o Ta = 75 C o IC = 4 IB 1 Ta = - 25 C o Ta = 25 C o 0.1 Ta = 125 C o Ta = 75 C o 0.01 0.01 0.1 1 10 0.1 0.01 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 10 tSTG & tF [s], SWITCHING TIME tSTG 1 tSTG & tF [s], SWITCHING TIME tSTG 1 tF 0.1 tF 0.1 IB1 = - IB2 = 0.2A VCC = 125V 0.01 0.1 1 IB1 = 120mA, IB2 = - 40mA VCC = 310V 0.01 0.1 1 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. Resistive Load Switching Time Figure 6. Resistive Load Switching Time (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FJE3303 Typical Characteristics 10 10 IC (Pulse) 1ms 5ms 100s IC[A], COLLECTOR CURRENT 1 IC (DC) IC [A], COLLECTOR CURRENT 1 0.1 TC = 25 C Single Pulse 0.01 1 10 100 1000 o IB1 = 1A, RB2 = 0 VCC = 50V, L =1 mH 0.1 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 7. Forward Biased Safe Operating Area Figure 8. Reverse Biased Safe Operating Area 30 PC [W], COLLECTOR POWER DISSIPATION 25 20 15 10 5 0 0 25 50 o 75 100 125 150 175 Ta [ C], AMBIENT TEMPERATURE Figure 9. Power Derating (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 FJE3303 Package Demensions TO-126 0.10 3.90 8.00 0.30 3.25 0.20 14.20MAX o3.20 0.10 11.00 0.20 (1.00) 0.75 0.10 1.60 0.10 0.75 0.10 0.30 (0.50) 1.75 0.20 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 13.06 16.10 0.20 0.50 -0.05 +0.10 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation Rev. A, March 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST BottomlessTM FASTrTM CoolFETTM FPSTM CROSSVOLTTM FRFETTM DOMETM GlobalOptoisolatorTM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM FACTTM i-LoTM Across the board. Around the world.TM The Power Franchise Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM PACMANTM POPTM ISOPLANARTM Power247TM LittleFETTM MICROCOUPLERTM PowerSaverTM PowerTrench MicroFETTM QFET MicroPakTM QSTM MICROWIRETM QT OptoelectronicsTM MSXTM Quiet SeriesTM MSXProTM RapidConfigureTM OCXTM RapidConnectTM OCXProTM SILENT SWITCHER OPTOLOGIC SMART STARTTM OPTOPLANARTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I10 |
Price & Availability of FJE3303
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |