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Ordering number:EN5481
Features
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* Low ON resistance. * 4V drive.
.D
ta a
Sh
et e
4U
.
om c
N-Channel Silicon MOSFET
FW215
DC-DC Converter Applications
Package Dimensions
unit:mm 2129
[FW215]
8 5
5.0
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT
0.595
1.27
Tch
Tstg
Electrical Characteristics at Ta=25C
Parameter
Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Cutoff Voltage Gate-to-Source Leakage Current Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance Input Capacitance
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.D
t a
PW10s, duty cycle1% Mounted on a ceramic board (1200mm2x0.8mm) 1unit Mounted on a ceramic board (1200mm2x0.8mm)
S a
e h
Conditions
t e
0.43
0.1
1.5
1.8max
1
U 4
4
.c
m o
6.0 0.3
4.4
0.2
1:Source 1 2:Gate 1 3:Source 2 4:Gate 2 5:Drain 2 6:Drain 2 7:Drain 1 8:Drain 1
SANYO:SOP8
Ratings 30 20 5 48 1.7 2.0 150 -55 to +150 Unit V V A A W W
C C
Symbol ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=5A ID=5A, VGS=10V ID=5A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz
Conditons
Ratings min 30 100 10 1.0 5 9 36 58 460 250 120 10 120 70 46 78 2.4 typ max
Unit V A A V S m m pF pF pF
V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD
Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage
VDS=10V, f=1MHz See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit See Specified Test Circuit VDS=10V, VGS=10V, ID=5A IS=5A, VGS=0
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
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.D
at
aS
he
15 3 4 1.0
80
et
4U
ns
.
om c
ns ns ns
nC nC nC
1.2
V
61598TS (KOTO) TA-0975 No.5481-1/3
FW215
Switching Time Test Circuit
10V 0V VIN VIN PW=10s D.C.1% VDD=10V ID=5A RL=2
D
VOUT
G
P.G
FW215 50
S
6
I D - VDS
8V 6V
10 9
I D - VGS
VDS =10V
3.5 V
5
4V
Drain Current, ID - A
10V
8
3V
Drain Current, ID - A
4
7 6 5 4 3 2 1
3
75C
25C
1.0 1.5 2.0 2.5
2
1
VGS=2.5V
0 0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 0
Ta =
3.0
- 25
3.5
0.5
Drain-to-Source Voltage,VDS - V
100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100
Gate-to-Source Voltage, VGS - V
VDS=10V
100 90
| yfs | - I D
Between Drain-to-Source On-State Resistance, RDS (on) - m
R DS(on) - VGS
Tc=25C
Forward Transfer Admittance,| yfs| - S
80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 16 18 20
C 25
Ta 2 =5C C 75
ID=5A
Drain Current, ID - A
100
Gate-to-Source Voltage, VGS - V
10 7 VGS=0 5
R DS(on) - Tc
I F - VSD
Between Drain-to-Source On-State Resistance, RDS (on) - m
90
GS A, V
70 60 50 40 30 20 10 0 -60 -40 -20 0 20 40
ID =
5
Forward Current, IF - A
80
=4V
3 2 1.0 7 5 3 2
ID =5
A,VGS
=10V
3 2 60 80 100 120 140 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Case Temperature, Tc - C
Diode Forward Voltage, VSD - V
No.5481-2/3
- 25C
Ta =7
0.1 7 5
5C
25C
C
FW215
10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0 5 10 15 20 25 30
Ciss,Coss,Crss - VDS
f = 1MHz
10
VGS - Q g
Gate-to-Source Voltage, VGS - V
VDS=10V 9 ID =5A
8 7 6 5 4 3 2 1
Ciss,Coss,Crss - pF
Ciss
Coss
Crss
0 0
2
4
6
8
10
12
14
16
Drain-to-Source Voltage,VDS - V
1000 7 VDD =15V 5 VGS=10V
Total Gate Charge, Qg - nC
100 7 I DP = 48A 5 3 2
SW Time - I D
Switching Time, SW Time - ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 0.1 2 3 5 7 1.0 2 3 5
Drain Current, ID- A
tf
t d( off)
10 7 I D = 5A 5 3 2
,,,,,,, ,,,,,,, ,,,,,,, ,,,,,,,
DC op era
1pulse
ASO
10 s
10 0 s
10 ms
tr
10
0m
s
t d(on)
1.0 7 Operation in this area is limited 5 by RDS(on). 3 2 Ta=25C
tio
n
7 10
2
0.1 1unit 7 Mounted ceramic board (1200mm2 x 0.8mm) 5 23 5 7 1.0 2 3 5 7 10
2
3
5
Drain Current,ID - A Allowable Power Disipation, PD (FET2) -W
2.0 1.8
Drain-to-Source Voltage, VDS - V
2.5
P D (FET2) - P D (FET1)
M
Allowable Power Disipation, PD - W
P D - Ta
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4
ou
nte
2.0
1.7
do
nc
era
mi
cb
1.5
To
tal
oa
rd
Di
ss
(1
ip
20
0m
m2 x0
1.0
1u
ati
nit
on
.8m
m)
0.5
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0 0
Mounted ceramic board (1200mm2 x 0.8mm)
20 40 60 80 100 120 140 160
Allowable Power Disipation, PD (FET1) - W
Ambient Temperature, Ta - C
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 1998. Specifications and information herein are subject to change without notice.
PS No.5481-3/3

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