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TM
HA-5142/883
Dual, Ultra Low Power Operational Amplifier
Description
The HA-5142/883 dual, ultra-low power operational amplifier provides AC and DC performance characteristics similar to, or better than most general purpose amplifiers while only drawing 1/30 of the supply current of most general purpose amplifiers. This amplifier is well suited to applications which require low power dissipation and good electrical characteristics. The HA-5142/883 provides accurate signal processing by virtue of their low input offset voltage (6mV), low input bias current (100nA), high open loop gain (20kV/V) and low noise (20nV/Hz). These characteristics coupled with a 1.5V/s slew rate and a 24kHz bandwidth make the HA-5142/883 ideal for use in low power instrumentation, audio amplifier and active filter designs.
July 1994
Features
* This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. * Low Supply Current at VS = +5V. . . .(+25oC) 160A (Max) (Full) 200A (Max) * Wide Supply Voltage Range . . . . . . Single 3V to 30V or Dual 1.5 to 15V * High Slew Rate . . . . . . . . . . . . . . . . . . . . . . 0.8V/s (Min) 1.5V/s (Typ) * High Gain . . . . . . . . . . . . . . . . . . . . . . . . . . 20kV/V (Min) 75kV/V (Typ) * Low Noise (1kHz) . . . . . . . . . . . . . . . . . . 20nV/Hz (Typ) * 100% Tested at 15V and +5V, 0V Power Supplies * Unity Gain Stable * Dielectric Isolation
Ordering Information
PART NUMBER HA7-5142/883 HA2-5142/883 HA4-5142/883 TEMPERATURE RANGE -55oC
o
Applications
* Portable Instruments * Meter Amplifiers * Telephone Headsets * Microphone Amplifiers * Instrumentation * For Further Design Ideas See Application Note AN544
PACKAGE 8 Lead CerDIP 8 Pin Can 20 Lead Ceramic LCC
to
+125oC
o
-55 C to +125 C -55oC to +125oC
Pinouts
HA-5142/883 (CERDIP) TOP VIEW
NC
HA-5142/883 (CLCC) TOP VIEW
OUT 1 NC NC V+
HA-5142/883 (METAL CAN) TOP VIEW
V+ 8 OUT1 1 18 NC OUT2 NC -IN2 NC +IN1 3 4 V5 +IN2 -IN1 2 -+ 1 2 +6 -IN2 17 16 15 14 7 OUT2
OUT1 -IN1 +IN1
1 2 3 + 1 2 +
8 7 6 5
V+ OUT2 NC -IN2 +IN2 -IN1 NC +IN1 NC 4 5 6 7 8
3
2 1 -+
1 20 19
2 +-
V- 4
9 NC
10 11 12 13 VNC +IN2 NC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright (c) Intersil Americas Inc. 2002. All Rights Reserved
Spec Number
149
511035-883 FN3732.1
Specifications HA-5142/883
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . 35V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VOutput Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection Output Current Duration . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite One Amplifier Shorted to Ground Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC
Thermal Information
JC Thermal Resistance JA CerDIP Package . . . . . . . . . . . . . . . . . . . 115oC/W 28oC/W Ceramic LCC Package . . . . . . . . . . . . . . 65oC/W 15oC/W o Metal Can Package . . . . . . . . . . . . . . . . . 155 C/W 67oC/W Package Power Dissipation Limit at +75oC for TJ +175oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW Package Power Dissipation Derating Factor Above +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/oC Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . 1.5V to 15V or 3V to 30V VINCM 1/2 (V+ - V-) RL 50k
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: R SOURCE = 100, RLOAD = 500k, VOUT = 0V, Unless Otherwise Specified. Subscript 1 Refers to Supply Voltages (V) = 15V, Subscript 2 Refers to V+ = 5.0, V- = 0V GROUP A SUBGROUPS 1 2, 3 VIO2 Input Bias Current +IB1 VCM = 0V, VOUT = 1.4V VCM = 0V, +RS = 10k, -R S = 100 VCM = 0V, +RS = 100, -R S = 10k VCM = 0V, VOUT = 1.4V, +RS = 10k, -R S = 100 VCM = 0V, VOUT = 1.4V, +RS = 100, -R S = 10k VCM = 0V, +RS = 10k, -R S = 10k VCM = 0V, VOUT = 1.4V +RS = 10k, -R S = 10k 1 2, 3 1 2, 3 1 2, 3 1 2, 3 LIMITS TEMPERATURE +25oC +125
oC,
PARAMETERS Input Offset Voltage
SYMBOL VIO1
CONDITIONS VCM = 0V
MIN -6 -8 -6 -8 -100 -125 -100
MAX 6 8 6 8 100 125 100 125 100 125
UNITS V V V V nA nA nA nA nA nA
-55oC -55oC
+25 +125
oC
oC,
+25oC +125oC, -55oC +25oC +125 C, -55 C +25oC +125 C, -55 C +25oC +125
oC, o o o o
-IB1
-125 -100 -125
+IB2
-IB2
1 2, 3
-100 -125
100 125
nA nA
-55oC
Input Offset Current
IIO1
1 2, 3 1 2, 3
+25oC +125 C, -55 C +25oC +125
oC, o o
-10 -20 -10 -20
10 20 10 20
nA nA nA nA
IIO2
-55oC
Spec Number 150
511035-883
Specifications HA-5142/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: R SOURCE = 100, RLOAD = 500k, VOUT = 0V, Unless Otherwise Specified. Subscript 1 Refers to Supply Voltages (V) = 15V, Subscript 2 Refers to V+ = 5.0, V- = 0V GROUP A SUBGROUPS 1 2, 3 1 2, 3 1 2, 3 4 5, 6 4 5, 6 4 5, 6 1 2, 3 1 2, 3 1 2, 3 1 2, 3 -VOUT1 +VOUT2 -VOUT2 Quiescent Power Supply Current (Both Amplifiers) +ICC1 -ICC1 -ICC2 RL = 50k RL = 50k Terminated at 2.5V RL = 50k Terminated at 2.5V VOUT = 0V, IOUT = 0mA VOUT = 0V, IOUT = 0mA VOUT = 1.4V, IOUT = 0mA 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 LIMITS TEMPERATURE +25oC +125
oC,
PARAMETERS Common Mode Range
SYMBOL +CMR1 -CMR1 +CMR2
CONDITIONS V+ = +5V, V- = -25V V+ = +25V, V- = -5V V+ = +5V to +2V, V- = 0V to -3V, VOUT = 1.4V to -1.6V VOUT = 0V and +10V, RL = 50k VOUT = 0V and -10V, RL = 50k VOUT = 1.4V and 2.5V, RL = 50k VCM = 10V, V+ = 5V, V- = -25V, V OUT = -10V VCM = 10V, V+ = 25V, V- = -5V, V OUT = 1/4+10V VCM = 0V to 3V, V+ = 2V, V- = -3V, V OUT = 1/4-1.6V RL = 50k
MIN 10 10 3 3 20 15 20
MAX -10 -10 -10 -10 1 1.2 300 400 160 200
UNITS V V V V V V kV/V kV/V kV/V kV/V kV/V kV/V dB dB dB dB dB dB V V V V V V V V A A A A A A
-55oC
+25oC +125oC, -55oC +25oC +125
oC,
-55oC
Large Signal Voltage Gain
+AVOL1 -AVOL1 +AVOL2
+25oC +125oC, -55oC +25oC +125 C, -55 C +25
oC o o
15 20 15 77
+125oC, -55oC +25oC +125 C, -55 C +25oC +125 C, -55 C +25oC +125oC, -55oC +25oC +125
oC, o o o o
Common Mode Rejection Ratio
+CMRR1
77 77 77 77 77 10 10 3.8 3.5 -300 -400 -
-CMRR1
+CMRR2
Output Voltage Swing
+VOUT1
-55oC -55oC -55oC -55oC
+25 C +125
oC,
o
+25oC +125
oC, o
+25 C +125
oC,
+25oC +125oC, -55oC +25 C +125
oC, o
-55oC -55oC
+25oC +125
oC,
Spec Number 151
511035-883
Specifications HA-5142/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: R SOURCE = 100, RLOAD = 500k, VOUT = 0V, Unless Otherwise Specified. Subscript 1 Refers to Supply Voltages (V) = 15V, Subscript 2 Refers to V+ = 5.0, V- = 0V GROUP A SUBGROUPS 1 2, 3 1 2, 3 1 2, 3 1 2, 3 LIMITS TEMPERATURE +25oC +125
oC,
PARAMETERS Power Supply Rejection Ratio
SYMBOL +PSRR1
CONDITIONS VSUP = +10V, V+ = +10V, V- = -15V, V+ = +20V, V- = -15V VSUP = +10V, V+ = +15V, V- = -10V, V+ = +15V, V- = -20V VSUP = +10V, V+ = +5V, V- = 0V, V+ = +15V, V- = 0V RL = 50k
MIN 77 77 77 77 77
MAX -
UNITS dB dB dB dB dB dB dB dB
-55oC
-PSRR1
+25oC +125oC, -55oC +25oC +125 C, -55 C +25oC +125
oC, o o
-PSRR2
77 80 80
Channel Separation
CS
-55oC
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: RSOURCE = 50, RLOAD = 50k, CLOAD = 50pF, VOUT = 0V, AV = 1V/V, Unless Otherwise Specified. Subscript 1 Refers to Supply Voltages (V) = 15V; Subscript 2 Refers to V+ = 5.0V, V- = 0.0V. GROUP A SUBGROUPS 4 4 4 4 LIMITS TEMPERATURE +25
oC
PARAMETERS Slew Rate
SYMBOL +SR1 -SR1 +SR2 -SR2
CONDITIONS VOUT = -3V to +3V, VIN S.R. 10V/s VOUT = +3V to -3V, VIN S.R. 10V/s VOUT = 0V to +3V, VIN S.R. 10V/s VOUT = +3V to 0V, VIN S.R. 10V/s
MIN 0.8 0.8 0.8 0.8
MAX -
UNITS V/s V/s V/s V/s
+25oC +25oC +25oC
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: RSOURCE = 50, RLOAD = 50k, CLOAD = 50pF, AV = 1V/V, Unless Otherwise Specified. Subscript 1 Refers to Supply Voltages (V) = 15V; Subscript 2 Refers to V+ = 5.0V, V- = 0.0V. LIMITS PARAMETERS Full Power Bandwidth SYMBOL FPBW1 FPBW2 Minimum Closed Loop Stable Gain Quiescent Power Consumption CLSG PC 1 PC 2 NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2VPEAK). CONDITIONS VPEAK = 10V VPEAK = 1.1V, VREF = 2.5V RL = 50k, CL = 50pF VOUT = 0V, IOUT = 0mA VOUT = 1.4V, IOUT = 0mA NOTES 1, 2 1, 2 1 1, 3 1, 3 TEMPERATURE +25 C +25
oC o
MIN 12.7 115.8 1 -
MAX 12 1
UNITS kHz kHz V/V mW mW
-55oC to +125oC -55oC to +125oC -55oC to +125oC
Spec 3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.) Number 152
511035-883
HA-5142/883 Die Characteristics
DIE DIMENSIONS: 104 x 55 x 19 mils 1 mils 2650 x 1400 x 483m 25.4m METALLIZATION: Type: Al, 1% Cu Thickness: 16kA 2kA GLASSIVATION: Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.) Silox Thickness: 12kA 2kA Nitride Thickness: 3.5kA 1.5kA WORST CASE CURRENT DENSITY: 0.6 x 105A/cm 2 SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 72 PROCESS: Bipolar/JFET Dielectric Isolation
Metallization Mask Layout
HA-5142/883
V-
+IN1
-IN1
OUT1
+IN2
-IN2
OUT2
NC
V+
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com Spec Number 153
511035-883

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