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HRF503A Silicon Schottky Barrier Diode for Rectifying ADE-208-401B(Z) Rev 2 Features * Low forward voltage drop and suitable for high effifiency rectifying. * DO-214 is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HRF503A Laser Mark 503A Package Code DO-214 Outline Cathode mark Mark 503A 1 2 1. Cathode 2. Anode HRF503A Absolute Maximum Ratings (Ta = 25C) Item Repetitive peak reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Storage temperature Symbol V *1 RRM Value 35 5 Unit V A A C C I o*1 I FSM Tj Tstg *2 100 125 -40 to +125 Notes: 1. See from Fig.4 to Fig.7 2. 10msec half sine wave 1 pulse Electrical Characteristics (Ta = 25C) Item Forward voltage Symbol VF1 VF2 Reverse current Thermal resistance IR Rth(j-a) Rth(j-c) Note: 1. Glass epoxy board Min -- -- -- -- -- Typ 0.38 -- -- 75 35 Max -- 0.45 1.0 -- -- mA Unit V Test Condition I F = 3A I F = 5A VR = 35V *1 C/W Glass epoxy board Tc = 25C Land size 3.5 6.8 2.0 Unit: mm 2 HRF503A Main Characteristic 2 10 10 Pulse test -2 Pulse test Ta=75C Forward current I F (A) 10 Ta=75C 1.0 Ta=25C Reverse current I R (A) 10 -3 10 -4 Ta=25C 10 -1 10 -2 10 -5 10 -3 0 0.1 0.2 0.3 0.4 0.5 0.6 10 -6 0 Forward voltage V F (V) Fig.1 Forward current Vs. Forward voltage 20 40 10 30 Reverse voltage V R (V) 50 Fig.2 Reverse current Vs. Reverse voltage 10 3 f=1MHz Pulse test Capacitance C (pF) 10 2 10 1.0 10 Reverse voltage V R (V) 40 Fig.3 Capacitance Vs. Reverse voltage 3 HRF503A Main Characteristic 5 0A t T Tj =25C D= 12 0V D=5/6 t T D= t T Forward power dissipation Pd (W) 4 t T Reverse power dissipation Pd (W) D=1/6 10 D=2/3 Tj =125C Sin D=1/3 3 D=1/2 DC 2 8 D=1/2 6 Sin 4 1 2 0 0 0 1 2 3 4 5 6 0 10 20 30 40 Forward current I F (A) Fig.4 Forward p ower dissipation Vs. Forward current Reverse voltage V R(V) Fig.5 Reverse power dissipation Vs. Reverse voltage 6 VR=15V Tj =125C 6 VR=15V Tj =125C Glass epoxy PCB 5 Average forward current IO (A) Average forward current IO (A) 5 DC DC 4 D=1/3 4 3 D=1/6 2 Sin D=1/2 3 2 D=1/3 D=1/2 Sin 0 -25 0 25 50 75 100 125 1 D=1/6 0 -25 0 25 50 75 100 125 1 Case temperature Tc (C) Fig.6 Average forward current Vs. Case temperature Ambient temperature Ta (C) Fig.7 Average forward current Vs. Ambient temperature 4 HRF503A Package Dimensions Unit : mm Cathode Mark 3.0 0.2 4.0 0.2 503A 1 2 7.0 0.2 8.0 0.3 1 Cathode 2 Anode 0.25 1.2 0.3 2.1 0.2 Hitachi Code JEDEC Code EIAJ Code Weight (g) DO-214 DO-214 -- 0.16 5 |
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