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MG600Q1US61
TOSHIBA IGBT Module Silicon N Channel IGBT
MG600Q1US61
High Power Switching Applications Motor Control Applications
* * * * * High input impedance High speed: tf = 0.3 s (max) Inductive load Low saturation voltage: VCE (sat) = 2.6 V (max) The electrodes are isolated from case. Enhancement-mode Unit: mm
Equivalent Circuit
C
G E E
JEDEC JEITA TOSHIBA Weight: 465 g (typ.)
2-109F1A
Maximum Ratings (Tc = 25C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Forward current DC (Tc = 80C) DC (Tc = 80C) Symbol VCES VGES IC IF PC Tj Tstg Visol Terminal Mounting 3/4 3/4 Rating 1200 20 600 600 5400 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A A W C C Vrms N*m N*m
Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Isolation voltage Screw torque
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MG600Q1US61
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth (j-c) IF = 600 A, VGE = 0 V Tc = 25C Tc = 125C Inductive load VCC = 600 V IC = 600 A VGE = 15 V RG = 2.0 W Test Condition VGE = 20 V, VCE = 0 V VCE = 1200 V, VGE = 0 V IC = 600 mA, VCE = 5V IC = 600 A, VGE = 15 V Tc = 25C Tc = 125C Min 3/4 3/4 6.0 3/4 3/4 3/4 3/4 3/4 3/4 3/4 (Note 1) 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 7.0 2.1 2.7 50000 0.3 0.2 0.5 0.5 0.1 0.6 2.4 2.2 0.2 3/4 3/4 Max 500 1 8.0 2.6 3.2 3/4 3/4 3/4 3/4 3/4 0.3 3/4 2.8 3/4 3/4 0.023 0.05 V ms C/W ms Unit nA mA V V pF
VCE = 10 V, VGE = 0 V, f = 1 MHz
IF = 600 A, VGE = -15 V, di/dt = 1500 A/ms Transistor stage Diode stage
Note 1: Switching time and reverse recovery time test circuit and timing chart
RG -VGE IC RG
IF
VGE 0
90% 10%
L
VCC IC VCE 0 10% td (off) toff tf 10% td (on) ton tr
90%
90%
Irr IF IF trr
90% Irr 50% Irr
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MG600Q1US61
< VCE (sat) Rank >
VCE (sat)
Rank Symbol 21 22 23 24 25 26 27 Min 1.80 1.90 2.00 2.10 2.20 2.30 2.40 Max 2.10 2.20 2.30 2.40 2.50 2.60 2.70
< VF Rank >
VF
Rank Symbol D E F G Min 1.90 2.10 2.30 2.50 Max 2.20 2.40 2.60 2.80
< Mark Position >
Mark position
24D
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MG600Q1US61
IC - VCE
900 Common 800 emitter Tj = 25C 700 600 500 400 300 200 100 0 10 VGE = 9 V 2 4 6 8 10 20 900 15 12 Common 800 emitter Tj = 25C 700 600 500 400 20 15
IC - VCE
12
(A)
IC
Collector current
Collector current
IC
(A)
10 300 200 100 0 VGE = 9 V
0
0
2
4
6
8
10
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
VCE - VGE
12 Common emitter 12 Common emitter Tj = 25C Tj = 125C
VCE - VGE
(V)
10
(V) VCE Collector-emitter voltage
10
VCE
8
8
Collector-emitter voltage
6 600 4 900 2 IC = 300 A 0 0 5 10 15 20
6 600 4 900
2 IC = 300 A 0 0 5 10 15 20
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
VCE - VGE
12 Common emitter 900 Common emitter 800 VCE = 5 V Tj = -40C
IC - VGE
(V)
10
VCE
Collector-emitter voltage
IC Collector current
600 900 IC = 300 A
8
(A)
6 4 2
700 600 500 400 300 200 Tj = 125C 100 0 0 25
0 0
5
10
15
20
2
4
6
8
10
12
14
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
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MG600Q1US61
IF - VF
600 Common cathode 500 1000
VCE, VGE - QG
Common emitter RL = 1 W Tj = 25C 20
(V)
VGE = 0 Tj = 25C
V CE
800
16 400
(A)
Forward current IF
400
Collector-emitter voltage
600
600 200 VCE = 0 V
12
300 125
400
8
200
100 -40 0 0 0.5 1 1.5 2 2.5 3
200
4
0 0
1000
2000
3000
4000
0 5000
Forward voltage
VF
(V)
Charge
QG
(nC)
Switching time - RG
10000 VCC = 600 V, IC = 600 A VGE = 15 V : Tj = 25C : Tj = 125C toff td (off) ton 1000 1000
Switching loss - RG
Eon
Switching time
Switching loss
(mJ)
(ns)
100
Eoff
tr td (on)
tf 100 0 5 10 15 20 25 10 0 5 10
VCC = 600 V IC = 600 A VGE = 15 V : Tj = 25C : Tj = 125C 15 20 25
Gate resistance RG
(9)
Gate resistance RG
(9)
Switching time - IC
10000 1000
Switching loss - IC
toff
1000
(mJ)
(ns)
td (off)
100 Eoff
Switching time
ton 100 tr
td (on)
Switching loss
Eon 10 VCC = 600 V, RG = 2 W VGE = 15 V, Ls = 100 nH : Tj = 25C : Tj = 125C
tf VCC = 600 V, RG = 2 W VGE = 15 V, Ls = 100 nH : Tj = 25C : Tj = 125C 200 300 400 500 600
10 0
100
1 0
100
200
300
400
500
600
Collector current
IC
(A)
Collector current
IC
(A)
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Gate-emitter voltage VGE
(V)
MG600Q1US61
Irr, trr - IF
1000 100
Edsw - IF
(mJ)
trr VCC = 600 V RG = 2 W VGE = 15 V : Tj = 25C : Tj = 125C
Irr (A) (ms)
Peak reverse recovery current Reverse recovery time trr
100
Reverse recovery loss Edsw
600
Irr VCC = 600 V RG = 2 W VGE = 15 V : Tj = 25C : Tj = 125C
10
10 0
100
200
300
400
500
1 0
100
200
300
400
500
600
Forward current
IF
(A)
Forward current
IF
(A)
100000 50000 30000
C - VCE I V
Cies
Safe operating area
3000 IC max (pulsed) * 1000
(pF)
(A)
IC max (continuous) 50 ms*
Capacitance C
10000 5000 3000 Coes
Collector current
IC
300
100 100 ms* 1 ms* * Single nonrepetitive pulse Tc = 25C Curves must be with increase in temperature. 3 10 30 100 300 1000 3000
30
1000
Common emitter 500 f = 1 MHz Tj = 25C 300 0.3 0.5 1 0.1
Cres
10
3
5
10
30 50
100
3 1
Collector-emitter voltage
VCE
(V)
Collector-emitter voltage
VCE
(V)
Reverse bias soa
10000 1
Rth (t) - tw
Transient thermal resistance Rth (j-c) (C/W)
Tc = 25C 0.3 0.1 Diode stage 0.03 0.01 0.003 0.001 0.0003 0.001 Transistor stage
(A) Collector current IC
1000 100 Tj < 125C = VGE = 15 V RG = 2 W 10 0 200 400 600 800 1000 1200 1400
0.01
0.1
1
10
Collector-emitter voltage
VCE
(V)
Pulse width
tw
(s)
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MG600Q1US61
Short circuit soa
10000
(A) Collector current IC
1000 100 VGE = 15 V tw = 10 ms Tj = 125C 10 0 200 400 600 800 1000 1200 1400
Collector-emitter voltage
VCE
(V)
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MG600Q1US61
RESTRICTIONS ON PRODUCT USE
000707EAA
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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