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| Crystal oscillator SOJ HIGH-FREQUENCY CRYSTAL OSCILLATOR a D with output enable function. * Provided . * Low current consumption. w w w Specifications (characteristics) Item Output frequency range Power source voltage Temperature range Max. supply voltage Operating voltage Storage temperature Operating temperature Symbol f0 VDD-GND VDD TSTG TOPR TSOL f/f0 Iop tw/t VOH (IOH) VOL (IOL) CL N VIH VIL IOE tTLH tTHL tOSC fa * High-density mounting-type SMD. * A general-purpose SMD with heat-resisting cylindrical AT-cut crystal unit and allowing almost the same soldering temperature as SMD IC. * Cylindrical AT crystal unit builtin, thus assuring high reliability. U SG-6154series t aS t ee h om .c SG-615P SG-615PTJ Specifications SG-615PH 1.0250 MHz to 26.0000 MHz 26.0001 MHz to 66.6667 MHz Soldering condition Frequency stability Current consumption C-MOS level Duty TTL level Output voltage Output load condition (fan out) C-MOS TTL Output enable/disable input voltage Output disable current Output rise time C-MOS level TTL level C-MOS level Output fall time TTL level Oscillation start up time Aging Shock resistance Note: * Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition. * External by-pass capacitor is recommended. External dimensions #4 #3 w 5.08 w w S.R. 9.8 Max. 8.65 .D 1 2 3 4 -0.3 V to +7.0 V 5.0 V0.5 V -55 C to +125 C -20 C to 70 C (-40 C to 85 C) Twice at under 260 C within 10 s or under 230 C within 3 min. B: 50 x 10-6 C: 100 x 10-6 23 mA Max. 35 mA Max. 40 % to 60 % -- 40 % to 60 % 45 % to 55 % -- VDD -0.4 V Min. 2.4 V Min. VDD -0.4 V Min. -400 A -4 mA 0.4 V Max. 16 mA 8 mA 4 mA 50 pF Max. -- 50 pF Max. 10 TTL Max. 5 TTL Max. -- 2.0 V Min. 3.5 V Min. 2.0 V Min. 0.8 V Max. 1.5 V Max. 0.8 V Max. 12 mA Max. 28 mA Max. 20 mA Max. -- 7 ns Max. 5 ns Max. -- 8 ns Max. -- 7 ns Max. -- 5 ns Max. t a S a (Unit: mm) e h t e . U 4 m o c Remarks Stored as bare product after unpacking 55 MHz Max.(-40 C to +85 C) B type is possible up to 55 MHz No load condition C-MOS load: 1/2VDD TTL load: 1.4 V _ CL<15 pF IIH=1 A Max.(OE=VDD) IIL=-100 A Min.(OE=GND) IIL=-500 A Min.(OE=GND) PTJ OE=GND C-MOS load: 20 %80 % VDD TTL load: 0.4 V2.4 V C-MOS load: 80 %20 % VDD TTL load: 2.4 V0.4 V Time at 4.5 V to be 0 s Ta= +25 C, VDD = 5 V, first year 4 ms Max. 10 ms Max. 5 x 10-6/year Max. 20 x 10-6 Max. Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2sine wave in 3 directions Recommended soldering pattern 1.3 3.8 1.3 (Unit: mm) NO. Pin terminal OE GND OUT VDD #1 #2 14.0 Max. 4.7 Max. 0.51 0.25 Min. 7.62 33 w w w .D ta a he S 4.06 0.25 3.0 5.8 t4 e 3.0 SG-615P C 20.0000M E 9352A U . om c Crystal oscillator Actual size Specifications (characteristics) Item Output frequency range Symbol f0 SG-615PTW/STW SG-615PHW/SHW Specifications SG-615PCW/SCW 26.0001 MHz to 135.0000 MHz Remarks 55.0001 MHz to 135.0000 MHz Power source Max. supply voltage VDD-GND VDD voltage Operating voltage TSTG Temperature Storage temperature TOPR range Operating temperature TSOL Soldering condition (lead part) Frequency stability Current consumption Output disable current Output disable current C-MOS level Duty TTL level Output voltage f/f0 Iop IoE IST tw/t VOH VOL CL VIH VIL tTLH tTHL tOSC fa S.R. Output load condition (fan out) Output enable disable input voltage C-MOS level Output TTL level rise time C-MOS level Output TTL level fall time Oscillation start up time Aging Shock resistance -0.5 V to +7.0 V 5.0 V0.5 V 3.3 V0.3 V -55 C to +125 C -20 C to +70 C -40 C to +85 C Twice at under 260 C within 10 s or under 230 C within 3 min. B: 50 x 10-6 C: 100 x 10-6 M: 100 x 10-6 45 mA Max. 28 mA Max. 30 mA Max. 16 mA Max. 50 A Max. -- 40 % to 60 % 40 % to 60 % -- VDD-0.4 V Min. 0.4 V Max. 15 pF Max. 0.7 VDD Min. 2.0 V Min. 0.2 VDD Min. 0.8 V Max. -- 4 ns Max. 4 ns Max. 4 ns Max. -- -- -- 4 ns Max. 4 ns Max. 4 ns Max. -- -- 10 ms Max. 5 x 10-6/year Max. 20 x 10-6 Max. -20 C to +70 C 40 C to +85 C No load condition OE=GND ST=GND C-MOS load: 1/2VDD TTL load: 1.4 V IOH= -16 mA (*TW/HW)/-8 mA(*CW) IOL= -16 mA (*TW/HW)/8 mA(*CW) OE,ST OE,ST C-MOS load: 20 %80 % VDD TTL load: 0.4 V2.4 V C-MOS load: 80 %20 % VDD TTL load: 2.4 V0.4 V Time at 4.5 V to be 0 s Ta=+25 C, VDD =5 V Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions Operating condition and Frequency band Operating condition Frequency stability:B ( -20 to +70 C) Frequency stability:C ( -20 to +70 C) Frequency stability:B ( -20 to +70 C) 3.3 V0.3 V Frequency stability:C ( -20 to +70 C) Frequency stability:M ( -40 to +85 C) 1 MHz 1.025 SG-615P 1.025 SG-615P 26 SG-615PCW/SCW 26 SG-615PCW/SCW 26 SG-615PCW/SCW 135 135 50 MHz 26 55 SG-615PTJ/PH 26 SG-615PTJ/PH 66.667 SG-615PTW/STW/PHW/SHW 135 100 MHz SG-615PTW/STW/PHW/SHW 135 150 MHz 135 5 V0.5 V 34 |
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