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1SR156-400 Diodes Rectifier diode 1SR156-400 Applications High speed rectification External dimensions (Units : mm) 1.50.2 Features 1) Small surface mounting type. (PMDS) 2) VRM=400V guaranteed while maintaining high speed. 3) High reliability. CATHODE MARK 4.50.2 1.20.3 2 1 4 2 0.1 +0.02 -0.1 2.00.2 2.60.2 Construction Silicon diffused junction ROHM : PMDS EIAJ : - JEDEC : SOD-106 1 , 2 ***Date code EX. 1999.29.2 Absolute maximum ratings (Ta = 25C) Parameter Absolute peak reverse voltage Peak reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature 60Hz for 1 Symbol VRSM VRM IO IFSM Tj Tstg Limits 500 400 1.0 20 150 -55~+150 Unit V V A A C C Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min. - - - Typ. - - - Max. 1.3 10 0.4 Unit V A s IF=0.8A VR=400V IF=IR=10mA, Irr=1mA Conditions 5.00.3 1SR156-400 Diodes Electrical characteristic curves (Ta = 25C) 10 105 500 REVERSE RECOVERY TIME : trr (ns) 125C FORWARD CURRENT : IF (A) REVERSE CURRENT : IR (nA) IR=10mA Irr=1mA 400 1 104 75C 100m 103 25C 300 10m 125C -25C 25C 75C 102 -25C 200 1m 10 100 0.1m 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 0 100 200 300 400 500 600 700 0 0 5 10 15 20 25 30 35 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) FORWARD CURRENT : IF (mA) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Reverse recovery time characteristics AVERAGE RECTIFIED CURRENT : IO (A) 0.8 SURGE FORWARD CURRENT : IFSM (A) 1.0 RE SIS TIV E AN 50 40 0.6 CA PA 30 D IN DU TI CI 0.4 CT IVE LO AD 20 VE LO 0.2 AD 10 P=50% 0 0 25 50 100 150 200 0 1 2 5 10 20 50 100 AMBIENT TEMPERATURE : Ta (C) CYCLES (60 Hz) Fig.4 Derating curve Fig.5 Maximum peak forward surge current characteristics 10 D.U.T. 500 PULSE GENERATOR 10 OSCILLOSCOPE Fig.6 Reverse recovery time (trr) measurement circuit This datasheet has been download from: www..com Datasheets for electronics components. |
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