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| EGP30A-EGP30K Discrete POWER & Signal Technologies EGP30A - EGP30K Features 1.0 min (25.4) * * * * * Glass passivated cavity-free junction. High surge current capability. Low leakage current. Superfast recovery time for high efficiency. Low forward voltage, high current capability. 0.375 (9.53) 0.285 (7.24) DO-201AD COLOR BAND DENOTES CATHODE 0.210 (5.33) 0.190 (4.83) 0.052 (1.32) 0.048 (1.22) Dimensions in inches (mm) 3.0 Ampere Glass Passivated High Efficiency Rectifiers Absolute Maximum Ratings* Symbol IO if(surge) TA = 25C unless otherwise noted Parameter Average Rectified Current .375 " lead length @ TA = 55C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Storage Temperature Range Operating Junction Temperature Value 3.0 125 Units A A 6.25 50 20 8.5 -65 to +150 -65 to +150 W mW/C C/W C/W C C PD RJA RJL Tstg TJ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics Parameter 30A Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) Maximum Reverse Current @ rated VR TA = 25C TA = 125C Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Maximum Forward Voltage @ 3.0 A Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz 50 35 50 TA = 25C unless otherwise noted Device 30B 100 70 100 30C 150 105 150 30D 200 140 200 5.0 100 50 0.95 95 1.25 75 75 1.7 30F 300 210 300 30G 400 280 400 30J 600 420 600 30K 800 560 800 Units V V V A A nS V pF (c)1999 Fairchild Semiconductor Corporation EGP30A - EGP30K, Rev. A EGP30A-EGP30K Typical Characteristics PEAK FORWARD SURGE CURRENT (A) Forward Current Derating Curve 3 FORWARD CURRENT (A) Non-Repetitive Surge Current 175 150 125 100 75 50 25 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 2 1 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.0mm) LEAD LENGTHS 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE ( C) 175 Forward Characteristics 50 FORWARD CURRENT (A) 10 REVERSE CURRENT ( A) EGP30A-EGP30D Reverse Characteristics 100 T A = 150 C 10 T A = 125 C T A = 150 C T A= 25 C 1 1 0.1 TA = 75 C 0.1 EGP30F-EGP30K 0.01 TA = 25 C Pulse Width = 300s 2% Duty Cycle 0.01 0.2 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) 1.6 1.8 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Junction Capacitance 210 180 CAPACITANCE (pF) 150 120 EGP30A-EGP30D 90 EGP30F-EGP30K 60 30 0 0.1 1 10 100 REVERSE VOLTAGE (V) 1000 50 NONINDUCTIVE 50 NONINDUCTIVE +0.5A (-) trr DUT 50V (approx) 50 NONINDUCTIVE Pulse Generator (Note 2) (+) OSCILLOSCOPE (Note 1) 0 -0.25A NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms. -1.0A 1.0cm SET TIME BASE FOR 5/ 10 ns/ cm Reverse Recovery Time Characterstic and Test Circuit Diagram EGP30A - EGP30K, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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