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| Semiconductor IRF420, IRF421, IRF422, IRF423 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. July 1998 Features * 2.2A and 2.5A, 450V and 500V * rDS(ON) = 3.0 and 4.0 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol Ordering Information D PART NUMBER IRF420 IRF421 IRF422 IRF423 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF420 IRF421 IRF422 IRF423 S G NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1998 File Number 1571.3 5-1 IRF420, IRF421, IRF422, IRF423 Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified IRF420 500 500 2.5 1.6 10 20 50 0.4 210 -55 to 150 300 260 IRF421 450 450 2.5 1.6 10 20 50 0.4 210 -55 to 150 300 260 IRF422 500 500 2.2 1.4 8 20 50 0.4 210 -55 to 150 300 260 IRF423 450 450 2.2 1.4 8 20 50 0.4 210 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . .TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See TB334 . . . . . . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V, (Figure 10) 500 450 VGS(TH) IDSS VGS = VDS , ID = 250A VDS = Rated BVDSS , VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC 2.0 4.0 25 250 V V V A A MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF420, IRF422 IRF421, IRF423 Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) IRF420, IRF421 IRF422, IRF423 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IRF420, IRF421 IRF422, IRF423 Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge ID(ON) VDS > ID(ON) x rDS(ON)MAX , VGS = 10V (Figure 7) 2.5 2.2 - 100 A A nA IGSS rDS(ON) VGS = 20V ID = 1.4A, VGS = 10V, (Figures 8, 9) - gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VGS = 10V, ID 2.5A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature VDS 10V, ID = 2.0A, (Figure 12) VDD = 250V, ID 2.5A, RG = 18, RL = 96, VGS = 10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 1.5 - 2.5 3.0 2.3 10 12 28 12 11 3.0 4.0 15 18 42 18 19 S ns ns ns ns nC - 5 6 - nC nC 5-2 IRF420, IRF421, IRF422, IRF423 Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS LD Measured between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die. Measured from the Source Lead, 6mm (0.25in) from the Flange and Source Bonding Pad. Modified MOSFET Symbol Showing the Internal Devices Inductances. D LD G LS S TEST CONDITIONS VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11) MIN - TYP 300 75 20 5.0 MAX - UNITS pF pF pF nH Internal Source Inductance LS - 12.5 - nH Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA Free Air Operation - - 2.5 30 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D MIN - TYP - MAX 2.5 10 UNITS A A G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES: VSD trr QRR TJ = 25oC, ISD = 2.5A, VGS = 0V, (Figure 13) TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/s TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/s 130 0.57 270 1.2 1.4 540 2.3 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 60mH, RG = 25, peak IAS = 2.5A, Figures 15, 16. 5-3 IRF420, IRF421, IRF422, IRF423 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID , DRAIN CURRENT (A) TC = 25oC Unless Otherwise Specified 2.5 2.0 IRF420, IRF421 1.5 IRF422, IRF423 1.0 0.8 0.6 0.4 0.2 0 0.5 0 0 50 100 150 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) TC , CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 ZJC, TRANSIENT THERMAL IMPEDANCE 1 0.5 0.2 0.1 0.05 PDM t1 t2 0.1 0.02 0.01 SINGLE PULSE 0.01 10-5 NOTES: DUTY FACTOR: D = t1/t2 TJ = PDM x ZJC + TC 10-4 10-3 10-2 0.1 1 10 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 5 10 ID, DRAIN CURRENT (A) IRF420/1 10s IRF422/3 IRF420/1 100s IRF422/3 1 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED SINGLE PULSE 10 IRF420/2 IRF421/3 DC 102 103 0 0 50 100 150 1ms 10ms ID , DRAIN CURRENT (A) 4 VGS = 10V 80s PULSE TEST VGS = 6V 3 VGS = 5.5V 2 1 VGS = 4V VGS = 5V VGS = 4.5V 200 250 0.1 1 VDS , DRAIN TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 5-4 IRF420, IRF421, IRF422, IRF423 Typical Performance Curves 5 80s PULSE TEST VGS = 10V ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 4 VGS = 6V 3 TC = 25oC Unless Otherwise Specified (Continued) 10 VDS 50V 80s PULSE TEST TJ = 150oC TJ = 25oC 1 2 VGS = 5.5V 0.1 1 VGS = 4V 0 0 VGS = 5V VGS = 4.5V 4 8 12 16 VDS , DRAIN TO SOURCE VOLTAGE (V) 20 0.01 0 2 4 6 8 10 VGS , GATE TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 10 80s PULSE TEST 8 NORMALIZED ON RESISTANCE rDS(ON) , DRAIN TO SOURCE ON RESISTANCE () 3.0 ID = 2.5A VGS = 10V 2.4 6 1.8 4 VGS = 10V VGS = 20V 1.2 2 0.6 0 0 2 4 6 8 10 ID , DRAIN CURRENT (A) 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2s pulse is minimal. FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE vs JUNCTION TEMPERATURE 1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A C, CAPACITANCE (pF) 1.15 1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS 800 1.05 600 CISS 400 0.95 0.85 200 CRSS COSS 0.75 -60 -40 0 -20 0 20 40 60 80 100 120 140 160 1 10 VDS , DRAIN TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (oC) 102 FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-5 IRF420, IRF421, IRF422, IRF423 Typical Performance Curves 4.0 ISD , SOURCE TO DRAIN CURRENT (A) PULSE DURATION = 80s gfs , TRANSCONDUCTANCE (S) 3.2 TJ = 25oC 2.4 TC = 25oC Unless Otherwise Specified (Continued) 10 PULSE DURATION = 80s TJ = 150oC 1 1.6 TJ = 150oC 0.8 TJ = 25oC 0 0 0.8 1.6 2.4 3.2 4.0 ID , DRAIN CURRENT (A) 0.1 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 20 VGS , GATE TO SOURCE VOLTAGE (V) ID = 2.5A 16 VDS = 400V VDS = 250V VDS = 100V FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 12 8 4 0 0 4 8 12 16 20 Qg(TOT) , TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5-6 IRF420, IRF421, IRF422, IRF423 Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG IAS VDD tP VDS VDD + 0V IAS 0.01 0 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 5-7 |
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