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| PD - 9.1306A IRFIZ46N HEXFET(R) Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V G S RDS(on) = 0.020 ID = 33A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. TO-220 FULLPAK Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. Max. 33 23 180 45 0.3 20 230 16 4.5 5.0 -55 to + 175 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient Min. ---- ---- Typ. ---- ---- Max. 3.3 65 Units C/W 8/25/97 IRFIZ46N Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss C Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Sink Capacitance Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.017 --- V/C Reference to 25C, ID = 1mA --- 0.020 VGS = 10V, ID = 19A --- 4.0 V VDS = VGS , ID = 250A --- --- S VDS = 25V, ID = 28A --- 25 VDS = 55V, VGS = 0V A --- 250 VDS = 44V, VGS = 0V, T J = 150C --- 100 VGS = 20V nA --- -100 VGS = -20V --- 61 ID = 28A --- 13 nC VDS = 44V --- 24 VGS = 10V, See Fig. 6 and 13 12 --- VDD = 28V 80 --- ID = 28A ns 43 --- RG = 12 52 --- RD = 0.98, See Fig. 10 Between lead, --- 4.5 --- 6mm (0.25in.) nH from package --- 7.5 --- --- --- and center of die contact --- 1500 --- VGS = 0V --- 450 --- VDS = 25V pF --- 160 --- = 1.0MHz, See Fig. 5 --- 12 --- = 1.0MHz Min. 55 --- --- 2.0 16 --- --- --- --- --- --- --- --- --- --- --- D G S Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 72 210 33 A 180 1.3 110 310 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 19A, VGS = 0V TJ = 25C, IF = 28A di/dt = 100A/s D G S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 410H RG = 25, IAS = 28A. (See Figure 12) ISD 28A, di/dt 240A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. Uses IRFZ46N data and test conditions t=60s, =60Hz IRFIZ46N 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP 1000 I , D ra in -to -S o u rce C u rre n t (A ) D I , D ra in -to -S o u rce C u rre n t (A ) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP 100 100 10 10 4 .5V 4.5 V 1 0.1 1 2 0 s PU LSE W ID TH TJ TC = 2 5C 10 A 1 0.1 1 20 s P UL SE W IDTH TTJ = 17 5C C 10 100 A 100 V D S , D rain-to-S ource V oltage (V ) V D S , Drain-to-Source V oltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D = 2 8A I D , D r ain- to-S ourc e C urre nt (A ) 2.0 100 TJ = 2 5 C TJ = 1 7 5 C 1.5 1.0 10 0.5 1 4 5 6 7 V DS = 2 5 V 2 0 s P U L SE W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10 V 100 120 140 160 180 A V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T em perature (C ) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFIZ46N 2800 2400 C , C a p a c ita n c e (p F ) 2000 C is s 1600 C os s 1200 V G S , G a te -to -S o u rc e V o lta g e (V ) V GS C is s C rs s C o ss = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d 20 I D = 2 8A V DS = 4 4V V DS = 2 8V 16 12 8 800 C rs s 400 4 0 1 10 100 A 0 0 10 20 30 FO R TES T C IR CU IT SEE FIG U R E 13 40 50 60 A V D S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 I S D , R e v e rse D ra in C u rre n t (A ) OPE R ATIO N IN TH IS A RE A LIMITE D BY R D S(o n) I D , D ra in C u rre n t (A ) 100 100 1 0s T J = 17 5C T J = 25 C 10 1 00s 10 1m s 1 0.4 0.8 1.2 1.6 VG S = 0 V 2.0 A 1 1 T C = 25 C T J = 17 5C S ing le Pulse 10 10m s A 100 2.4 V S D , S ource-to-Drain Voltage (V ) V D S , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRFIZ46N 35 VDS VGS RD 30 D.U.T. + RG ID , Drain Current (A) -VDD 25 10V 20 Pulse Width 1 s Duty Factor 0.1 % 15 Fig 10a. Switching Time Test Circuit VDS 90% 10 5 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature 10 Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRFIZ46N L E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) VDS D.U.T. RG + 10 V 500 TO P 400 B OTTO M ID 11 A 2 0A 28 A VDD IAS tp 0.01 300 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD VDS 200 100 0 25 VD D = 2 5V 50 75 100 125 150 A 175 Starting T J , Junction Temperature (C) IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V .2F .3F QG 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS IG ID Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRFIZ46N Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer D.U.T + - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRFIZ46N Package Outline TO-220 FullPak Outline Dimensions are shown in millimeters (inches) 10.60 (.41 7) 10.40 (.40 9) o 3.40 (.133 ) 3.10 (.123 ) -A 3.70 (.145) 3.20 (.126) 4.8 0 (.189) 4.6 0 (.181) 2 .80 (.110) 2 .60 (.102) LE AD A S SIGN M E N T S 1 - GA TE 2 - D R AIN 3 - SO U R C E 7 .10 (.280) 6 .70 (.263) 16 .0 0 (.630) 15 .8 0 (.622) 1.15 (.04 5) M IN . 1 2 3 N O T ES : 1 D IM EN SION IN G & T O LER A N C IN G PE R AN S I Y14.5 M , 1982 2 C O N TR OLLIN G D IM EN S ION : IN C H . 3.30 (.130 ) 3.10 (.122 ) -B13 .7 0 (.540) 13 .5 0 (.530) C D A 3X 1.40 (.05 5) 1.05 (.04 2) 0.9 0 (.035) 3X 0.7 0 (.028) 0.25 (.010 ) 2 .54 (.100) 2X M AM B 3X 0.48 (.019) 0.44 (.017) B 2.85 (.112 ) 2.65 (.104 ) M IN IM U M C R E EP AG E D IST A NC E B ET W E EN A-B -C -D = 4.80 (.189 ) Part Marking Information TO-220 FullPak E XAM PLE : T HIS IS A N IRF I840G W ITH AS SE MBLY LOT CODE E401 A INT ER NAT IONA L RE CTIF IER LOGO PA RT NU MBE R IRF I840G E 401 9 24 5 AS SE MBLY LOT COD E D ATE CODE (YYW W ) YY = YE AR W W = W E EK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-KU, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 |
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