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ELM7Sx ,ELM7Sx B
* GENERAL DESCRIPTION
SERIES CMOS LOGIC IC
*EELM7Sxx,ELM7SxxB Series are CMOS ICs. They realize a high speed operation similar to LS-TTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains wider noise immunity and constant output. *E ELM7S66,ELM7S66B are CMOS analog switches. They realize a high speed operation with a low power consumption by CMOS features. With a low on resistance and a high transmission rate, they realize a wider input voltage range.
*
FEATURES
SOT-25 (2.9*~ 1.6*~ 1.1mm) 5 - pin package
*E Very small
SOT-26 (2.9*~ 1.6*~ 1.1mm) 6 - pin package *E Same electrical characteristics as 74HC Series *E Power voltage range : 2.0 * 6.0V *E Operation temp. range : - 40 * + 85*Z *E| IOH | = IOL = 2mA (min)
*
SERIES
Function NAND
VCC
AND
VCC
NOR
VCC
OR
VCC
Diagram ( T OP VIEW)
GND
GND
GND
GND
Prod u ct Function
ELM7S00 ELM7S00B INV
VCC
ELM7S08 ELM7S08B UNB. INV
VCC
ELM7S02 ELM7S02B UNB. INV* ~ 2
ELM7S32 ELM7S32B EX OR
VCC
Diagram ( T OP VIEW)
VCC GND
GND
GND
GND
Prod u ct Function
ELM7S04 ELM7S04B ANALOG SW
VCC
ELM7SU04 ELM7SU04B SMT. INV
VCC
ELM7SU04W ELM7SU04BW
ELM7S86 ELM7S86B
Diagram ( T OP VIEW)
GND
GND
Prod u ct
ELM7S66 ELM7S66B
ELM7S14 ELM7S14B
13
ELM7Sx ,ELM7Sx B
* SELECTION GUIDE
Sy m b ol 00 08 02 32 Function 04 U04 86 66 14 NAND AND NOR OR INV UNB.INV EX OR Analog SW SMT. INV
SERIES CMOS LOGIC
ELM7S x x
: Sn/ P b
a,b
14
ELM7S00,ELM7S00B
* DESCRIPTION
2-input NAND Gate
ELM7S00,ELM7S00B are CMOS 2-input NAND gate ICs. They realize a high speed operation similar to LSTTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains wider noise immunity and constant output.
*
FEATURES
*E Package : SOT-25 package *E Same electrical characteristics as 74HC Series *E Power voltage range : 2.0 * 6.0V *E Operation temp. range : - 40 * + 85*Z *E| IOH | = IOL = 2mA (min)
*
PIN CONFIGURATION
TOP VIEW 5 4
1
2
3
Pin No. 1 2 3 4 5
Pin Nam e INB INA GND OUTX VCC
Input INA INB Low Low Low High High Low High High
Output OUTX High High High Low
*
MARKING
SOT-25
@AB
No. @ A B
Ma rk E 1 A*M ex c epted I) (
Contents ELM7Sx x , ELM7Sx x B series ELM7S00, ELM7S00B Lot No.
* MAXIMUM ABSOLUTE RATINGS
Param e ter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Sy m b ol Value VCC -0.5*+70 . VIN -0.5*VCC+05. VOUT -0.5*VCC+05. IIK *}20 IOK }20 * IOUT *}25 ICC, IGND *}25 Pd 200 Tstg -65+150 * *Z Units V V V mA mA mA mA mW
15
CMOS LOGIC IC ELM7S00,ELM7S00B 2-input NAND Gate
* SUGGESTED OPERATING CONDITION
Param e ter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Sy m b ol VCC VIN VOUT Top tr,tf Value 2.0*60 . 0*VCC 0*VCC -40*+85 0*1000 VCC=20V) ( . 0*00 VCC=45V) 5 ( . 0*400 VCC=60V) ( . Units V V V *Z ns
* DC ELECTRICAL CHARACTERISTICS
Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Ma x . Min. Ma x . Units 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 Input Voltage 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 4.5 4.4 4.5 4.4 VOH 6.0 95. 6.0 95. V 4.5 4.18 4.36 4.13 6.0 68 84 5. 5. 63 5. Output Voltage 2.0 0.0 0.1 0.1 4.5 0.0 0.1 0.1 VOL 6.0 0.0 0.1 0.1 4.5 0.11 0.26 0.33 6.0 0.13 0.26 0.33 Input Current IIN 6.0 -0.1 0.1 -1.0 1.0 Static Current ICC 6.0 1.0 10.0 Cond i tions
VIN= VIH or VIL
IOH = -20EA IOH = -2mA IOH = -2.6mA
VIN= VIH IOL = 20A E V IOL = 2mA IOL = 2.6mA VIN = VCC or GND VIN = VCC or GND
EA EA
* AC ELECTRICAL CHARACTERISTICS
( CL=15pF, tr=tf=6ns,VCC=5V ) Top = 25 * Z Param e ter Sy m . Min. Ty p . Ma x . 4 High Output tTLH Down-time tTHL 3 5 Propagation tPLH Delay-time tPHL 5 Units 10 10 15 15 Cond i tions ns ns Refer to following test circuit Refer to following test circuit
16
CMOS LOGIC IC ELM7S00,ELM7S00B 2-input NAND Gate
( CL=0pF, tr=tf=6ns ) 5 Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Max. Min. Max. Units Cond i tions 2.0 18 125 155 tTLH 4.5 7 25 31 ns 6.0 6 21 26 High-Output Refer to Down-time test circuit 2.0 14 125 155 tTHL 4.5 6 25 31 ns 6.0 6 21 26 2.0 16 100 125 tPLH 4.5 8 20 25 ns 6.0 7 17 21 Propagation Refer to Delay-time test circuit 2.0 16 100 125 tPHL 4.5 6 20 25 ns 6.0 5 17 21 Input Capacity CIN 5 10 10 pF Equivalent Inner Capacity CPD 10 pF
* CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current umption at non-load is calculated as onsc following formula ; ICC (opr) = CPD *E VCC *E fIN + ICC
*
TEST CIRCUIT
VCC
OUT PUT
Pu l se O i l l a to r sc
50
I NPUT
C L
* Output hould be opened when easuring current consuption. s m m
*
MEASURED WAVE PATTERN
6 ns 6 ns
VCC
90% 50% INPUT 10%
90% 50% 10%
GND
tTHL
OUTPUT 90% 50% 10% 10%
tTLH
90% 50% VOL VOH
tPHL
tPLH
17
ELM7S08,ELM7S08B
* DESCRIPTION
2-input AND Gate
ELM7S08,ELM7S08B are CMOS 2-input AND gate ICs. They realize a high speed operation similar to LSTTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains wider noise immunity and constant output.
*
FEATURES
: SOT-25 package
*E Package
*E Same electrical characteristics as 74HC Series *E Power voltage range : 2.0 * 6.0V *E Operation temp. range : - 40 * +85*Z *E| IOH | = IOL = 2mA (min)
*
PIN CONFIGURATION
TOP VIEW 5 4
1
2
3
Pin No. 1 2 3 4 5
Pin Nam e INB INA GND OUTX VCC
Input INA INB Low Low Low High High Low High High
Output OUTX Low Low Low High
*
MARKING
SOT-25
@AB
No. @ A B
Mark E 2 A*M (excepted I)
Contents ELM7Sxx, ELM7Sxx series ELM7S08, ELM7S08B Lot No.
* MAXIMUM ABSOLUTE RATINGS
Param e ter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Sy m b ol Value VCC -0.5*+70 . VIN -0.5*VCC+05. VOUT -0.5*VCC+05. IIK *}20 IOK }20 * IOUT *}25 ICC, IGND *}25 Pd 200 Tstg -65+150 * *Z Units V V V mA mA mA mA mW
18
CMOS LOGIC IC ELM7S08,ELM7S08B 2-input AND Gate
* SUGGESTED OPERATING CONDITION
Param e ter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Sy m b ol VCC VIN VOUT Top tr,tf Value 2.0*60 . 0*VCC 0*VCC -40*+85 0*1000 VCC=20V) ( . 0*00 VCC=45V) 5 ( . 0*400 VCC=60V) ( . Units V V V *Z ns
* DC ELECTRICAL CHARACTERISTICS
Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Ma x . Min. Ma x . Units Cond i tions 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 Input Voltage 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIH IOH = -20EA VOH 6.0 95. 6.0 95. V 4.5 4.18 4.36 4.13 IOH = -2mA 6.0 68 83 5. 5. 63 5. IOH = -2.6mA Output Voltage 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIH IOL = 20A E VOL 6.0 0.0 0.1 0.1 V or 4.5 0.12 0.26 0.33 VIL IOL = 2mA 6.0 0.13 0.26 0.33 IOL = 2.6mA Input Current IIN 6.0 -0.1 0.1 -1.0 1.0 EA VIN = VCC or GND Static Current ICC 6.0 1.0 10.0 EA VIN = VCC or GND
* AC ELECTRICAL CHARACTERISTICS
( CL=15pF, tr=tf=6ns,VCC=5V ) Top = 25 * Z Param e ter Sy m . Min. Ty p . Ma x . 4 High Output tTLH Down-time tTHL 3 4 Propagation tPLH Delay-time tPHL 5 Units 10 10 15 15 Cond i tions ns ns Refer to following test circuit Refer to following test circuit
19
CMOS LOGIC IC ELM7S08,ELM7S08B 2-input AND Gate
( CL=0pF, tr=tf=6ns ) 5 Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Max. Min. Max. Units Cond i tions 2.0 21 125 155 tTLH 4.5 7 25 31 ns 6.0 6 21 26 High-Output Refer to Down-time test circuit 2.0 18 125 155 tTHL 4.5 6 25 31 ns 6.0 6 21 26 2.0 16 100 125 tPLH 4.5 6 20 25 ns 6.0 5 17 21 Propagation Refer to Delay-time test circuit 2.0 17 100 125 tPHL 4.5 8 20 25 ns 6.0 7 17 21 Input Capacity CIN 5 10 10 pF Equivalent Inner Capacity CPD 10 pF
* CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current umption at non-load is calculated as onsc following formula; ICC (opr) = CPD *E VCC *E fIN + ICC
*
TEST CIRCUIT
VCC
Pulse Oscilator
50
INPUT
OUTPUT
CL
* Output hould be opened when easuring current consuption. s m m
*
MEASURED WAVE PATTERN
6 ns 6 ns VCC
90% 50%
90% 50% 10%
INPUT
10%
tPLH
tPHL
90% 50% 10% 10%
GND
90% 50%
VOH
OUTPUT
VOL
tTLH
tTHL
20
ELM7S02,ELM7S02B
* DESCRIPTION
2-input NOR Gate
ELM7S02,ELM7S02B are CMOS 2-input NOR gate ICs. They realize a high speed operation similar to LSTTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains wider noise immunity and constant output.
*
FEATURES
: SOT-25 package
*E Package
*E Same electrical characteristics as 74HC Series *E Power voltage range : 2.0 * 6.0V *E Operation temp. range : - 40 * +85*Z *E| IOH | = IOL = 2mA (min)
*
PIN CONFIGURATION
TOP VIEW 5 4
1
2
3
Pin No. 1 2 3 4 5
Pin Nam e INB INA GND OUTX VCC
Input INA INB Low Low Low High High Low High High
Output OUTX High Low Low Low
*
MARKING
SOT-25
@AB
No. @ A B
Ma rk E 3 A*M ex c epted I) (
Contents ELM7Sx x, ELM7Sx x B series ELM7S02, ELM7S02B Lot No.
* MAXIMUM ABSOLUTE RATINGS
Param e ter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Sy m b ol Value VCC -0.5*+70 . VIN -0.5*VCC+05. VOUT -0.5*VCC+05. IIK *}20 IOK }20 * IOUT *}25 ICC, IGND *}25 Pd 200 Tstg -65+150 * *Z Units V V V mA mA mA mA mW
21
CMOS LOGIC IC ELM7S02,ELM7S02B 2-input NOR Gate
* SUGGESTED OPERATING CONDITION
Param e ter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Sy m b ol VCC VIN VOUT Top tr,tf Value 2.0*60 . 0*VCC 0*VCC -40*+85 0*1000 VCC=20V) ( . 0*00 VCC=45V) 5 ( . 0*400 VCC=60V) ( . Units V V V *Z ns
* DC ELECTRICAL CHARACTERISTICS
Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Ma x . Min. Ma x . Units Cond i tions 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 Input Voltage 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIL IOH = -20EA VOH 6.0 95. 6.0 95. V 4.5 4.18 4.35 4.13 IOH = -2mA 6.0 68 83 5. 5. 63 5. IOH = -2.6mA Output Voltage 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIH IOL = 20A E VOL 6.0 0.0 0.1 0.1 V or 4.5 0.12 0.26 0.33 VIL IOL = 2mA 6.0 0.13 0.26 0.33 IOL = 2.6mA Input Current IIN 6.0 -0.1 0.1 -1.0 1.0 EA VIN = VCC or GND Static Current ICC 6.0 1.0 10.0 EA VIN = VCC or GND
* AC ELECTRICAL CHARACTERISTICS
Top = 25 * Z Param e ter Sy m . Min. Ty p . Ma x . 4 High Output tTLH Down-time tTHL 3 5 Propagation tPLH Delay-time tPHL 5 Units 10 10 15 15
( CL=15pF, tr=tf=6ns,VCC=5V ) Cond i tions
ns ns
Refer to following test circuit Refer to following test circuit
22
CMOS LOGIC IC ELM7S02,ELM7S02B 2-input NOR Gate
( CL=0pF, tr=tf=6ns ) 5 Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Max. Min. Max. Units Cond i tions 2.0 21 125 155 tTLH 4.5 8 25 31 ns 6.0 7 21 26 High-Output Refer to Down-time test circuit 2.0 16 125 155 tTHL 4.5 7 25 31 ns 6.0 6 21 26 2.0 19 100 125 tPLH 4.5 8 20 25 ns 6.0 7 17 21 Propagation Refer to Delay-time test circuit 2.0 17 100 125 tPHL 4.5 7 20 25 ns 6.0 6 17 21 Input Capacity CIN 5 10 10 pF Equivalent Inner Capacity CPD 10 pF
* CPD is IC's Inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current umption at non-load is calculated as onsc following formula; ICC (opr) = CPD *E VCC *E fIN + ICC
*
TEST CIRCUIT
VCC INPUT
Pulse Oscilator
OUTPUT
50
CL
* Output hould be opened when easuring current consuption. s m m
*
MEASURED WAVE PATTERN
6 ns 6 ns
VCC
90% 50% INPUT 10%
90% 50% 10%
GND
tTHL
OUTPUT 90% 50% 10% 10%
tTLH
90% 50% VOL VOH
tPHL
tPLH
23
ELM7S32,ELM7S32B
* DESCRIPTION
2-input OR Gate
ELM7S32,ELM7S32B are CMOS 2-input OR gate ICs. They realize a high speed operation similar to LS-TTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains wider noise immunity and constant output.
*
FEATURES
: SOT-25 package
*E Package
*E Same electrical characteristics as 74HC Series *E Power voltage range : 2.0 * 6.0V *E Operation temp. range : - 40 * +85*Z *E| IOH | = IOL = 2mA (min)
*
PIN CONFIGURATION
TOP VIEW 5 4
1
2
3
Pin No. 1 2 3 4 5
Pin Nam e INB INA GND OUTX VCC
Input INA INB Low Low Low High High Low High High
Output OUTX Low High High High
*
MARKING
SOT-25
@AB
No. @ A B
Ma rk E 4 A*M exc epted I) (
Contents ELM7Sx x , ELM7Sx x B series ELM7S32, ELM7S32B Lot No.
* MAXIMUM ABSOLUTE RATINGS
Param e ter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Sy m b ol Value VCC -0.5*+70 . VIN -0.5*VCC+05. VOUT -0.5*VCC+05. IIK *}20 IOK }20 * IOUT *}25 ICC, IGND *}25 Pd 200 Tstg -65+150 * *Z Units V V V mA mA mA mA mW
24
CMOS LOGIC IC ELM7S32,ELM7S32B 2-input OR Gate
* SUGGESTED OPERATING CONDITION
Param e ter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Sy m b ol VCC VIN VOUT Top tr,tf Value 2.0*60 . 0*VCC 0*VCC -40*+85 0*1000 VCC=20V) ( . 0*00 VCC=45V) 5 ( . 0*400 VCC=60V) ( . Units V V V *Z ns
* DC ELECTRICAL CHARACTERISTICS
Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Ma x . Min. Ma x . Units 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 Input Voltage 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 4.5 4.4 4.5 4.4 VOH 6.0 95. 6.0 95. V 4.5 4.18 4.36 4.13 6.0 68 83 5. 5. 63 5. Output Voltage 2.0 0.0 0.1 0.1 4.5 0.0 0.1 0.1 VOL 6.0 0.0 0.1 0.1 4.5 0.12 0.26 0.33 6.0 0.16 0.26 0.33 Input Current IIN 6.0 -0.1 0.1 -1.0 1.0 Static Current ICC 6.0 1.0 10.0 Cond i tions
VIN= VIH or VIL
IOH = -20EA IOH = -2mA IOH = -2.6mA
VIN= VIL IOL = 20A E V IOL = 2mA IOL = 2.6mA VIN = VCC or GND VIN = VCC or GND
EA EA
* AC ELECTRICAL CHARACTERISTICS
Top = 25 * Z Param e ter Sy m . Min. Ty p . Ma x . Units 4 10 High Output tTLH Down-time tTHL 4 10 5 15 Propagation tPLH Delay-time tPHL 5 15
( CL=15pF, tr=tf=6ns,VCC=5V ) Cond i tions
ns ns
Refer to following test circuit Refer to following test circuit
25
CMOS LOGIC IC ELM7S32,ELM7S32B 2-input OR Gate
( CL=0pF, tr=tf=6ns ) 5 Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Max. Min. Max. Units Cond i tions 2.0 22 125 155 tTLH 4.5 7 25 31 ns 6.0 6 21 26 High-Output Refer to Down-time test circuit 2.0 18 125 155 tTHL 4.5 6 25 31 ns 6.0 6 21 26 2.0 17 100 125 tPLH 4.5 7 20 25 ns 6.0 6 17 21 Propagation Refer to Delay-time test circuit 2.0 18 100 125 tPHL 4.5 8 20 25 ns 6.0 7 17 21 Input Capacity CIN 5 10 10 pF Equivalent Inner Capacity CPD 10 pF
* CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current umption at non-load is calculated as onsc following formula; ICC (opr) = CPD *E VCC *E fIN + ICC
*
TEST CIRCUIT
VCC
OUTPUT
Pulse Oscilator
50
INPUT
CL
* Output hould be opened when easuring current consuption. s m m
*
MEASURED WAVE PATTERN
6 ns 6 ns VCC
90% 50%
90% 50% 10%
INPUT
10%
tPLH
tPHL
90% 50% 10% 10%
GND
90% 50%
VOH
OUTPUT
VOL
tTLH
tTHL
26
ELM7S04,ELM7S04B
* DESCRIPTION
Inverter
ELM7S04,ELM7S04B are CMOS inverter ICs. They realizes a high speed operation similar to LS-TTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains a wider noise immunity and a constant output.
*
FEATURES
: SOT-25 package
*E Package
*E Same electrical characteristics as 74HC Series *E Power voltage range : 2.0 * 6.0V *E Operation temp. range : - 40 * +85*Z *E| IOH | = IOL = 2mA (min)
*
PIN CONFIGURATION
TOP VIEW 5 4
1
2
3
Pin No. 1 2 3 4 5
Pin Nam e NC INY GND OUTX VCC
Input INA Low High
Output OUTX High Low
*
MARKING
SOT-25
@AB
No. @ A B
Ma rk E 5 A*M ex c epted I) (
Contents ELM7Sx x, ELM7Sx x B series ELM7S04, ELM7S04B Lot No.
* MAXIMUM ABSOLUTE RATINGS
Param e ter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Sy m b ol Value VCC -0.5*+70 . VIN -0.5*VCC+05. VOUT -0.5*VCC+05. IIK *}20 IOK }20 * IOUT *}25 ICC, IGND *}25 Pd 200 Tstg -65+150 * *Z Units V V V mA mA mA mA mW
27
CMOS LOGIC IC ELM7S04,ELM7S04B Inverter
* SUGGESTED OPERATING CONDITION
Param e ter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Sy m b ol VCC VIN VOUT Top tr,tf Value 2.0*60 . 0*VCC 0*VCC -40*+85 0*1000 VCC=20V) ( . 0*00 VCC=45V) 5 ( . 0*400 VCC=60V) ( . Units V V V *Z ns
* DC ELECTRICAL CHARACTERISTICS
Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Ma x . Min. Ma x . Units Cond i tions 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 Input Voltage 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIL IOH = -20EA VOH 6.0 95. 6.0 95. V 4.5 4.18 4.35 4.13 IOH = -2mA 6.0 68 83 5. 5. 63 5. IOH = -2.6mA Output Voltage 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIH IOL = 20A E VOL 6.0 0.0 0.1 0.1 V 4.5 0.12 0.26 0.33 IOL = 2mA 6.0 0.13 0.26 0.33 IOL = 2.6mA Input Current IIN 6.0 -0.1 0.1 -1.0 1.0 EA VIN = VCC or GND Static Current ICC 6.0 1.0 10.0 EA VIN = VCC or GND
* AC ELECTRICAL CHARACTERISTICS
Top = 25 * Z Param e ter Sy m . Min. Ty p . Ma x . 4 High Output tTLH Down-time tTHL 3 5 Propagation tPLH Delay-time tPHL 5 Units 10 10 15 15
( CL=15pF, tr=tf=6ns,VCC=5V ) Cond i tions
ns ns
Refer to following test circuit Refer to following test circuit
28
CMOS LOGIC IC ELM7S04,ELM7S04B Inverter
( CL=0pF, tr=tf=6ns ) 5 Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Max. Min. Max. Units Cond i tions 2.0 22 125 155 tTLH 4.5 8 25 31 ns 6.0 6 21 26 High-Output Refer to Down-time test circuit 2.0 16 125 155 tTHL 4.5 7 25 31 ns 6.0 6 21 26 2.0 18 100 125 tPLH 4.5 8 20 25 ns 6.0 7 17 21 Propagation Refer to Delay-time test circuit 2.0 17 100 125 tPHL 4.5 7 20 25 ns 6.0 6 17 21 Input Capacity CIN 5 10 10 pF Equivalent Inner Capacity CPD 10 pF
* CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current umption at non-load is calculated as onsc following formula; ICC (opr) = CPD *E VCC *E fIN + ICC
*
TEST CIRCUIT
VCC
Pulse Oscilator
50
INPUT
OUTPUT
CL
* Output hould be opened when easuring current consuption. s m m
*
MEASURED WAVE PATTERN
6 ns 6 ns
VCC
90% 50% INPUT 10%
90% 50% 10%
GND
tTHL
OUTPUT 90% 50% 10% 10%
tTLH
90% 50% VOL VOH
tPHL
tPLH
29
ELM7SU04,ELM7SU04B
* DESCRIPTION
Unbuffer Inverter
ELM7SU04,ELM7SU04B are CMOS unbuffer inverter ICs. They realize a high speed operation similar to LSTTL with a lower power consumption by CMOS features.
*
FEATURES
*E Package : SOT-25 package *E Same electrical characteristics as 74HC Series *E Power voltage range : 2.0 * 6.0V *E Operation temp. range : - 40 * +85*Z *E| IOH | = IOL = 2mA (min)
*
PIN CONFIGURATION
TOP VIEW 5 4
1
2
3
Pin No. 1 2 3 4 5
Pin Nam e NC INY GND OUTX VCC
Input INA Low High
Output OUTX High Low
*
MARKING
SOT-25
@AB
No. @ A B
Ma rk E 6 A*M (excepted I)
Contents ELM7Sxx, ELM7SxxB series ELM7SU04, ELM7SU04B Lot No.
* MAXIMUM ABSOLUTE RATINGS
Param e ter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Sy m b ol Value VCC -0.5*+70 . VIN -0.5*VCC+05. VOUT -0.5*VCC+05. IIK *}20 IOK }20 * IOUT *}25 ICC, IGND *}25 Pd 200 Tstg -65+150 * *Z Units V V V mA mA mA mA mW
30
CMOS LOGIC IC ELM7SU04,ELM7SU04B Unbuffer Inverter
* SUGGESTED OPERATING CONDITION
Param e ter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Sy m b ol VCC VIN VOUT Top tr,tf Value 2.0*60 . 0*VCC 0*VCC -40*+85 0*1000 VCC=20V) ( . 0*00 VCC=45V) 5 ( . 0*400 VCC=60V) ( . Units V V V *Z ns
* DC ELECTRICAL CHARACTERISTICS
Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Ma x . Min. Ma x . Units Cond i tions 2.0 1.7 1.7 VIH 4.5 3.6 3.6 V 6.0 4.8 4.8 Input Voltage 2.0 0.3 0.3 VIL 4.5 0.9 0.9 V 6.0 1.2 1.2 2.0 1.8 2.0 1.8 VIN= 4.5 4.0 4.5 4.0 VIL IOH = -20EA VOH 6.0 5. 6.0 5. V 4.5 4.18 4.31 4.13 IOH = -2mA 6.0 68 80 5. 5. 63 5. IOH = -2.6mA Output Voltage 2.0 0.0 0.2 0.2 VIN= 4.5 0.0 0.5 0.2 VIH IOL = 20A E VOL 6.0 0.0 0.5 0.5 V 4.5 0.17 0.26 0.33 IOL = 2mA 6.0 0.18 0.26 0.33 IOL = 2.6mA Input Current IIN 6.0 -0.1 0.1 -1.0 1.0 EA VIN = VCC or GND Static Current ICC 6.0 1.0 10.0 EA VIN = VCC or GND
* AC ELECTRICAL CHARACTERISTICS
Top = 25 * Z Param e ter Sy m . Min. Ty p . Ma x . 4 High Output tTLH Down-time tTHL 3 5 Propagation tPLH Delay-time tPHL 5 Units 10 10 15 15
( CL=15pF, tr=tf=6ns,VCC=5V ) Cond i tions
ns ns
Refer to following test circuit Refer to following test circuit
31
CMOS LOGIC IC ELM7SU04,ELM7SU04B Unbuffer Inverter
( CL=50pF, tr=tf=6ns ) Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Ma x . Min. Ma x . Units Cond i tions 2.0 29 125 155 tTLH 4.5 11 25 31 ns 6.0 11 21 26 High-Output Refer to Down-time test circuit 2.0 26 125 155 tTHL 4.5 9 25 31 ns 6.0 8 21 26 2.0 18 100 125 tPLH 4.5 8 20 25 ns 6.0 7 17 21 Propagation Refer to Delay-time test circuit 2.0 17 100 125 tPHL 4.5 7 20 25 ns 6.0 6 17 21 Input Capacity CIN 5 10 10 pF Equivalent Inner Capacity CPD 10 pF
* CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current umption at non-load is calculated as onsc following formula; ICC (opr) = CPD *E VCC *E fIN + ICC
*
TEST CIRCUIT
VCC
Pulse Oscilator
50
INPUT
OUTPUT
CL
* Output hould be opened when easuring current consuption. s m m
*
MEASURED WAVE PATTERN
6 ns 6 ns
VCC
90% 50% INPUT 10%
90% 50% 10%
GND
tTHL
OUTPUT 90% 50% 10% 10%
tTLH
90% 50% VOL VOH
tPHL
tPLH
32
ELM7SU04W,ELM7SU04BW Unbuffer Inverter *~
* DESCRIPTION
2
ELM7SU04W, ELM7SU04BW are CMOS unbuffer inverter ICs. They realize a high speed operation similar to LS-TTL with a lower power consumption by CMOS features.
*
FEATURES
*E Package : SOT-26 package *E Same electrical characteristics as 74HC Series *E Power voltage range : 2.0 * 6.0V *E Operation temp. range : - 40 * +85*Z *E| IOH | = IOL = 2mA (min)
*
PIN CONFIGURATION
TOP VIEW 6 5 4
1
2
3
Pin No. 1 2 3 4 5 6
Pin Nam e OUTA GND INB OUTB VCC INA
Input INA INB Low High
Output OUTA OUTB High Low
*
MARKING
SOT-26
@AB
No. @ A B
Ma rk E B A*M ex c epted I) (
Contents ELM7Sx x, ELM7Sx x B series ELM7SU04W, ELM7SU04BW Lot No.
* MAXIMUM ABSOLUTE RATINGS
Param e ter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Sy m b ol Value VCC -0.5*+70 . VIN -0.5*VCC+05. VOUT -0.5*VCC+05. IIK *}20 IOK }20 * IOUT *}25 ICC, IGND *}25 Pd 200 Tstg -65+150 * *Z Units V V V mA mA mA mA mW
33
CMOS LOGIC IC ELM7SU04W,ELM7SU04BW Unbuffer Inverter**~ 2
* SUGGESTED OPERATING CONDITION
Param e ter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Sy m b ol VCC VIN VOUT Top tr,tf Value 2.0*60 . 0*VCC 0*VCC -40*+85 0*1000 VCC=20V) ( . 0*00 VCC=45V) 5 ( . 0*400 VCC=60V) ( . Units V V V *Z ns
* DC ELECTRICAL CHARACTERISTICS
Top = 25 * Z Top = -40* + 8 5 * Z Sy m . VCC Min. Ty p . Ma x . Min. Ma x . Units Cond i tions 2.0 1.7 1.7 VIH 4.5 3.6 3.6 V 6.0 4.8 4.8 Input Voltage 2.0 0.3 0.3 VIL 4.5 0.9 0.9 V 6.0 1.2 1.2 2.0 1.8 2.0 1.8 VIN= 4.5 4.0 4.5 4.0 VIH IOH = -20EA VOH 6.0 5. 6.0 5. V or 4.5 4.18 4.31 4.13 VIL IOH = -2mA 6.0 68 80 5. 5. 63 5. IOH = -2.6mA Output Voltage 2.0 0.0 0.2 0.2 VIN= 4.5 0.0 0.5 0.5 VIH IOL = 20A E VOL 6.0 0.0 0.5 0.5 V 4.5 0.17 0.26 0.33 IOL = 2mA 6.0 0.18 0.26 0.33 IOL = 2.6mA Input Current IIN 6.0 -0.1 0.1 -1.0 1.0 EA VIN = VCC or GND Static Current ICC 6.0 1.0 10.0 EA VIN = VCC or GND Param e ter
* AC ELECTRICAL CHARACTERISTICS
Top = 25 * Z Param e ter Sy m . Min. Ty p . Ma x . Units 5 10 High Output tTLH Down-time tTHL 5 10 5 15 Propagation tPLH Delay-time tPHL 5 15
( CL=15pF, tr=tf=6ns,VCC=5V ) Cond i tions
ns ns
Refer to following test circuit Refer to following test circuit
34
CMOS LOGIC IC ELM7SU04W,ELM7SU04BW Unbuffer Inverter**~ 2
( CL=50pF, tr=tf=6ns ) Top = 25 * Z T op = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Ma x . Min. Ma x . Units Cond i tions 2.0 50 125 155 tTLH 4.5 14 25 31 ns 6.0 12 21 26 High-Output Refer to Down-time test circuit 2.0 50 125 155 tTHL 4.5 14 25 31 ns 6.0 12 21 26 2.0 48 100 125 tPLH 4.5 12 20 25 ns 6.0 9 17 21 Propagation Refer to Delay-time test circuit 2.0 48 100 125 tPHL 4.5 12 20 25 ns 6.0 9 17 21 Input Capacity CIN 5 10 10 pF Equivalent Inner Capacity CPD 10 pF
* CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current umption at non-load is calculated as onsc following formula; ICC (opr) = CPD *E VCC *E fIN + ICC
*
TEST CIRCUIT
VCC
Pulse Oscilator
50
INPUT
OUTPUT
CL
* Output hould be opened when easuring current consuption. s m m
*
MEASURED WAVE PATTERN
6 ns 6 ns
VCC
90% 50% INPUT 10%
90% 50% 10%
GND
tTHL
OUTPUT 90% 50% 10% 10%
tTLH
90% 50% VOL VOH
tPHL
tPLH
35
ELM7S86,ELM7S86B
* DESCRIPTION
2-input EXCLUSIVE OR Gate
ELM7S86,ELM7S86B are CMOS 2-input EXOR gate ICs. They realize a high speed operation similar to LSTTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains a wider noise immunity and a constant output.
*
FEATURES
: SOT-25 package
*E Package
*E Same electrical characteristics as 74HC Series *E Power voltage range : 2.0 * 6.0V *E Operation temp. range : - 40 * +85*Z *E| IOH | = IOL = 2mA (min)
*
PIN CONFIGURATION
TOP VIEW 5 4
1
2
3
Pin No. 1 2 3 4 5
Pin Nam e INB INA GND OUTX VCC
Input INA INB Low Low Low High High Low High High
Output OUTX Low High High Low
*
MARKING
SOT-25
@AB
No. @ A B
Ma rk E 8 A*M ex c epted I) (
Contents ELM7Sx x, ELM7Sx x B series ELM7S86, ELM7S86B Lot No.
* MAXIMUM ABSOLUTE RATINGS
Param e ter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Sy m b ol Value VCC -0.5*+70 . VIN -0.5*VCC+05. VOUT -0.5*VCC+05. IIK *}20 IOK }20 * IOUT *}25 ICC, IGND *}25 Pd 200 Tstg -65+150 * *Z Units V V V mA mA mA mA mW
36
CMOS LOGI IC ELM7S86,ELM7S86B 2-input EXCLUSIVE OR Gate
* SUGGESTED OPERATING CONDITION
Param e ter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Sy m b ol VCC VIN VOUT Top tr,tf Value 2.0*60 . 0*VCC 0*VCC -40*+85 0*1000 VCC=20V) ( . 0*00 VCC=45V) 5 ( . 0*400 VCC=60V) ( . Units V V V *Z ns
* DC ELECTRICAL CHARACTERISTICS
Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Ma x . Min. Ma x . Units 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 Input Voltage 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 1.9 2.0 1.9 4.5 4.4 4.5 4.4 VOH 6.0 95. 6.0 95. V 4.5 4.18 4.31 4.13 6.0 68 80 5. 5. 63 5. Output Voltage 2.0 0.0 0.1 0.1 4.5 0.0 0.1 0.1 VOL 6.0 0.0 0.1 0.1 4.5 0.17 0.26 0.33 6.0 0.18 0.26 0.33 Input Current IIN 6.0 -0.1 0.1 -1.0 1.0 Static Current ICC 6.0 1.0 10.0 Cond i tions
VIN= VIH or VIL
IOH = -20EA IOH = -2mA IOH = -2.6mA
VIN= VIH IOL = 20A E V IOL = 2mA IOL = 2.6mA VIN = VCC or GND VIN = VCC or GND
EA EA
* AC ELECTRICAL CHARACTERISTICS
( CL=15pF, tr=tf=6ns,VCC=5V ) Top = 25 * Z Param e ter Sy m . Min. Ty p . Ma x . 7 High Output tTLH Down-time tTHL 7 9 Propagation tPLH Delay-time tPHL 9 Units 10 10 20 20 Cond i tions ns ns Refer to following test circuit Refer to following test circuit
37
CMOS LOGI IC ELM7S86,ELM7S86B 2-input EXCLUSIVE OR Gate
( CL=0pF, tr=tf=6ns ) 5 Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Max. Min. Max. Units Cond i tions 2.0 50 125 155 tTLH 4.5 14 25 31 ns 6.0 12 21 26 High-Output Refer to Down-time test circuit 2.0 50 125 155 tTHL 4.5 14 25 31 ns 6.0 12 21 26 2.0 60 135 170 tPLH 4.5 16 27 34 ns 6.0 10 22 28 Propagation Refer to Delay-time test circuit 2.0 60 135 170 tPHL 4.5 16 27 34 ns 6.0 10 22 28 Input Capacity CIN 5 10 10 pF Equivalent Inner Capacity CPD 10 pF
* CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current umption at non-load is calculated as onsc following formula; ICC (opr) = CPD *E VCC *E fIN + ICC
*
TEST CIRCUIT
VCC
Pulse Oscillator
INPUT
OUTPUT
CL 50
* Output hould be opened when easuring current consuption. s m m
*
MEASURED WAVE PATTERN
6 ns 6 ns VCC
90% 50%
90% 50% 10%
INPUT
10%
tPLH
tPHL
90% 50% 10% 10%
GND
90% 50%
VOH
OUTPUT
VOL
tTLH
tTHL
38
ELM7S66,ELM7S66B
* DESCRIPTION
Analog Switch
ELM7S66,ELM7S66B are CMOS analog switches. They realize a high speed operation with low power consumption by CMOS features. With a low on resistance and a high transmission rate, they realize a wider input voltage range.
*
FEATURES
: SOT-25 package
*E Package
*E Same electrical characteristics as 74HC Series *E Power voltage range : 2.0 * 6.0V *E Operation temp. range : - 40 * +85*Z *E| IOH | = IOL = 2mA (min)
*
PIN CONFIGURATION
TOP VIEW 5 4
1
2
3
Pin No. 1 2 3 4 5
Pin Nam e IN/OUT OUT/IN GND Control VCC
Control Low High
Switch OFF ON
*
MARKING
SOT-25
@AB
No. @ A B
Ma rk E 9 A*M ex c epted I) (
Contents ELM7Sx x, ELM7Sx x B series ELM7S66, ELM7S66B Lot No.
* MAXIMUM ABSOLUTE RATINGS
Param e ter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Sy m b ol Value VCC -0.5*+70 . VIN -0.5*VCC+05. VOUT -0.5*VCC+05. IIK *}20 IOK *}20 IOUT *}25 ICC, IGND *}25 Pd 200 Tstg -65+150 * *Z Units V V V mA mA mA mA mW
39
CMOS LOGIC IC ELM7S66,ELM7S66B Analog Switch
* SUGGESTED OPERATING CONDITION
Param e ter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Sy m b ol VCC VIN VOUT Top tr,tf Value 2.0*60 . 0*VCC 0*VCC -40*+85 0*1000 VCC=20V) ( . 0*00 VCC=45V) 5 ( . 0*400 VCC=60V) ( . Units V V V *Z ns
* DC ELECTRICAL CHARACTERISTICS
Top = 25 * Z Top = -40* + 8 5 * Z VCC Min. Ty p . Max. Min. Max. Units 2.0 1.5 1.5 VIH 4.5 3.15 3.15 V 6.0 4.2 4.2 Input Voltage 2.0 0.5 0.5 VIL 4.5 1.35 1.35 V 6.0 1.8 1.8 2.0 2000 000 5 6250 ON-Resistor RON 4.5 100 200 250 6.0 60 170 210 IS SW-Off 6.0 -0.1 0.1 -1.0 1.0 Leak-Current Off) ( IS SW-ON 6.0 -0.1 0.1 -1.0 1.0 Leak-Current On) ( Cont Input Current ICONT 6.0 -0.1 0.1 -1.0 1.0 Static Current ICC 6.0 1.0 10.0 Parame ter Sy m. Cond i tions
VCONT=VIH VIN=0VCC * IIN/OUT=1A m A E A E VCONT=VIL VIN=VCC, VOUT=GND
VCONT=VIH VIN = VCC or GND A VIN = VCC or GND E A VIN = VCC or GND E
40
CMOS LOGIC IC ELM7S66,ELM7S66B Analog Switch
* AC ELECTRICAL CHARACTERISTICS
T a = - 4 0 * + 8 5 * Z Ta = 25 * Z Sy m . VCC Min. Ty p . Max . Min. Max . tPLH 2.0 50 65 3.3 4 10 tPHL 0 5. 9 11 tZL 2.0 - 115 145 3.3 10 23 tZH 0 5. 20 -25 tLZ 2.0 - 115 145 4.5 14 23 29 tHZ 6.0 20 -25 2.0 20 fIN 4.5 30 6.0 30 CIN 5 10 -
( tr=tf=6ns ) Units 13 Cond i tions ns CL=50pF RL=10k CL=50pF RL=1k CL=50pF RL=1k RL=1k CL=1pF 5 VOUT=VCC/2
Param e ter Propagation Delay-time
Output Enable-Time
29
ns
Output Disable-Time Maximum Control Input Frequency Control Iutput Capacity
ns 10
MHz pF pF pF
SW-Input/Output CIN/OUT 6 Capacity Feed-Through Capacity CIN-OUT 0.5 Equivalent Inner Capacity CPD 13 -
-
-
Refer to test cicuit pF
* CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current umption at non-load is calculated as onsc following formula; ICC (opr) = CPD *E VCC *E fIN + ICC
41
CMOS LOGIC IC ELM7S66,ELM7S66B Analog Switch
*
*oe
TEST CIRCUIT
RON : ON Resister
42
CMOS LOGIC IC ELM7S66,ELM7S66B Analog Switch
*oe
tZH, tZL/tHZ, tLZ : Output enable, Output disable time
43
ELM7S14,ELM7S14B
* DESCRIPTION
SCHMITT Inverter
ELM7S14,ELM7S14B are CMOS schmitt inverter ICs. They realizes a high speed operation similar to LSTTL with a lower power consumption by CMOS features. An inner circuit structure of 3-stages logic gates obtains a wider noise immunity and a constant output.
*
F E ATURES
*EPackage : SOT-25 package *E Same electrical characteristics as 74HC Series *E Power voltage range : 2.0 * 6.0V *E Operation temp. range : - 40 * *E| IOH | = IOL = 2mA (min) +85*Z
*
PIN CONFIGURATION
TOP VIEW 5 4
1
2
3
Pin No. 1 2 3 4 5
Pin Nam e NC INY GND OUTX VCC
Input INA Low High
Output OUTX High Low
*
MARKING
SOT-25
@AB
No. @ A B
Ma rk E A A*M ex c epted I) (
Contents ELM7Sx x, ELM7Sx x B series ELM7S14, ELM7S14B Lot No.
* MAXIMUM ABSOLUTE RATINGS
Param e ter Power Voltage Input Voltage Output Voltage Input Protection Diode Current Output Parasitic Diode Current Output Current VCC/GND Current Power Dissipation Storage Temp. Sy m b ol Value VCC -0.5*+70 . VIN -0.5*VCC+05. VOUT -0.5*VCC+05. IIK *}20 IOK }20 * IOUT *}25 ICC, IGND *}25 Pd 200 Tstg -65+150 * *Z Units V V V mA mA mA mA mW
44
CMOS LOGIC IC ELM7S14,ELM7S14B SCHMITT Inverter
* SUGGESTED OPERATING CONDITION
Param e ter Power Voltage Input Voltage Output Voltage Operating Temp. High-input down-time Sy m b ol VCC VIN VOUT Top tr,tf Value 2.0*60 . 0*VCC 0*VCC -40*+85 0*1000 VCC=20V) ( . 0*00 VCC=45V) 5 ( . 0*400 VCC=60V) ( . Units V V V *Z ns
* DC ELECTRICAL CHARACTERISTICS
Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Ma x . Min. Ma x . Units Cond i tions 2.0 1.5 1.5 Vt+ 4.5 3.15 3.15 V 6.0 4.2 4.2 Threshold Voltage 2.0 0.3 0.3 Vt4.5 0.9 0.9 V 6.0 1.2 1.2 2.0 0.2 1.2 0.2 1.2 Hysteresis Voltage Vh 4.5 0.4 2.25 0.4 2.25 V 6.0 0.6 3.0 0.6 3.0 2.0 1.9 2.0 1.9 VIN= 4.5 4.4 4.5 4.4 VIH IOH = -20EA VOH 6.0 95. 6.0 95. V or 4.5 4.18 4.31 4.13 VIL IOH = -2mA 6.0 68 80 5. 5. 63 5. IOH = -2.6mA Output Voltage 2.0 0.0 0.1 0.1 VIN= 4.5 0.0 0.1 0.1 VIH IOL = 20A E VOL 6.0 0.0 0.1 0.1 V 4.5 0.17 0.26 0.33 IOL = 2mA 6.0 0.18 0.26 0.33 IOL = 2.6mA Input Current IIN 6.0 -0.1 0.1 -1.0 1.0 EA VIN = VCC or GND Static Current ICC 6.0 1.0 10.0 EA VIN = VCC or GND
45
CMOS LOGIC IC ELM7S14,ELM7S14B SCHMITT Inverter
* AC ELECTRICAL CHARACTERISTICS
( CL=15pF, tr=tf=6ns,VCC=5V ) Top = 25 * Z Param e ter Sy m . Min. Ty p . Ma x . Units 5 10 High Output tTLH Down-time tTHL 5 10 7 15 Propagation tPLH Delay-time tPHL 7 15 Cond i tions ns ns Refer to following test circuit Refer to following test circuit
( CL=0pF, tr=tf=6ns ) 5 Top = 25 * Z Top = -40* + 8 5 * Z Param e ter Sy m . VCC Min. Ty p . Max . Min. Max . Units Cond i tions 2.0 50 125 155 tTLH 4.5 14 25 31 ns 6.0 12 21 26 High-Output Refer to Down-time test circuit 2.0 50 125 155 tTHL 4.5 14 25 31 ns 6.0 12 21 26 2.0 48 100 125 tPLH 4.5 12 20 25 ns 6.0 9 17 21 Propagation Refer to Delay-time test circuit 2.0 48 100 125 tPHL 4.5 12 20 25 ns 6.0 9 17 21 Input Capacity CIN 5 10 10 pF Equivalent Inner Capacity CPD 10 pF
* CPD is IC's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to following test circuit. Averaged operating current umption at non-load is calculated as onsc following formula; ICC (opr) = CPD *E VCC *E fIN + ICC
46
CMOS LOGIC IC ELM7S14,ELM7S14B SCHMITT Inverter
* TEST CIRCUIT
VCC
Pulse Oscillator
50
INPUT
OUTPUT
CL
* Output hould be opened when easuring current consuption. s m m
*
MEASURED WAVE PATTERN
6 ns 6 ns
VCC
90% 50% INPUT 10%
90% 50% 10%
GND
tTHL
OUTPUT 90% 50% 10% 10%
tTLH
90% 50% VOL VOH
tPHL
tPLH
47

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