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| QRD1113/1114 REFLECTIVE OBJECT SENSOR PACKAGE DIMENSIONS 0.083 (2.11) OPTICAL CENTERLINE 0.240 (6.10) 0.120 (3.05) PIN 1 INDICATOR FEATURES * Phototransistor Output * No contact surface sensing * Unfocused for sensing diffused surfaces * Compact Package * Daylight filter on sensor 0.173 (4.39) 0.183 (4.65) NOTES 0.500 (12.7) MIN (Applies to Max Ratings and Characteristics Tables.) 0.020 (0.51) SQ. (4X) 2 3 0.100 (2.54) 1 4 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) from housing. 5. As long as leads are not under any spring tension. 6. D is the distance from the sensor face to the reflective surface. 7. Cross talk (ICX) is the collector current measured with the indicator current on the input diode and with no reflective surface. 8. Measured using an Eastman Kodak neutral white test card with 90% diffused reflecting as a reflective surface. 0.083 (2.11) PIN 1 COLLECTOR PIN 2 EMITTER PIN 3 ANODE PIN 4 CATHODE SCHEMATIC 2 3 NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. 3. Pins 2 and 4 typically .050" shorter than pins 1 and 3. 4. Dimensions controlled at housing surface. 1 4 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Lead Temperature (Solder Iron)(2,3) Lead Temperature (Solder Flow)(2,3) EMITTER Continuous Forward Current Reverse Voltage Power Dissipation(1) SENSOR Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD VCEO VECO PD 100 Rating -40 to +85 -40 to +85 240 for 5 sec 260 for 10 sec 50 5 100 30 Units C C C C mA V mW V V mW 1 of 3 100030A QRD1113/1114 REFLECTIVE OBJECT SENSOR ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA = 25C) SYMBOL MIN TYP MAX UNITS EMITTER Forward Voltage Reverse Current Peak Emission Wavelength SENSOR Collector-Emitter Breakdown Emitter-Collector Breakdown Dark Current COUPLED QRD1113 Collector Current QRD1114 Collector Current Collector Emitter Saturation Voltage Cross Talk Rise Time Fall Time IF = 20 mA VR = 5 V IF = 20 mA IC = 1 mA IE = 0.1 mA VCE = 10 V, IF = 0 mA IF = 20 mA, VCE = 5 V D = .050" (6,8) VF IR !PE BVCEO BVECO ID IC(ON) -- -- -- 30 5 -- 0.300 -- -- 940 -- -- -- -- 1.7 100 -- -- -- 100 -- V A nm V V nA mA IF = 20 mA, VCE = 5 V D = .050" (6,8) IC(ON) VCE (SAT) (7) 1 -- -- -- -- -- -- .200 10 50 -- 0.4 10 -- -- mA V A s s IF = 40 mA, IC = 100 A D = .050" (6,8) IF = 20 mA, VCE = 5 V, EE = 0 VCE = 5 V, RL = 100 " IC(ON) = 5 mA ICX tr tf 2 of 3 100030A QRD1113/1114 REFLECTIVE OBJECT SENSOR TYPICAL PERFORMANCE CURVES Fig. 1 Forward Voltage vs. Forward Current 1.60 1.40 Fig. 2 Normalized Collector Current vs. Forward Current 10.0 Fig. 3 Normalized Collector Current vs. Temperature 1.0 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA) VF - FORWARD VOLTAGE (mA) 1.20 1.00 0.20 0.60 1.00 0.8 0.6 0.10 0.4 0.01 VCE = 5 V D = .05" .001 0.2 0.40 0.20 0.1 1.0 10 100 IF = 10 mA VCE = 5 V 0 0 10 20 30 40 50 -50 -25 0 25 50 75 IF - FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA) TA - AMBIENT TEMPERATURE (C) Fig. 4 Normalized Collector Dark Current vs. Temperature 102 VCE = 10 V Fig. 5 Normalized Collector Current vs. Distance NORMALIZED - COLLECTOR CURRENT (mA) ID - COLLECTOR DARK CURRENT 101 1.0 .9 .8 .7 .6 .5 .4 .3 .2 .1 0 0 50 100 150 200 250 300 350 400 450 500 IF = 20 mA VCE = 5 V 10 1.0 10-1 10-2 10-3 -50 -25 0 25 50 75 100 TA - AMBIENT TEMPERATURE (C) REFLECTIVE SURFACE DISTANCE (mils) 3 of 3 100030A |
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