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Product Description Sirenza Microdevices' SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, W-CDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. SXA-389 400-2500 MHz 1/4 W Medium Power GaAs HBT Amplifier with Active Bias Product Features * On-chip Active Bias Control, Single 5V Supply * High Output 3rd Order Intercept: +42 to +44 dBm typ. * High P1dB : +25 dBm typ. * High Gain: +19 dB at 850 MHz * High Efficiency: consumes only 600 mW * Patented High Reliability GaAs HBT Technology * Surface-Mountable Power Plastic Package Typical IP3, P1dB, Gain 50 45 40 35 30 OIP3 P1dB Gain dBm 25 20 15 10 5 0 850 MHz 1960 MHz 2140 MHz 2450 MHz Applications * W-CDMA, PCS, Cellular Systems * High Linearity IF Amplifiers * Multi-Carrier Applications Units f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz f = 850 MHz f = 1960 MHz f = 2140 MHz f = 2450 MHz V cc = 5 V Min. Typ. 25 25 25 25 19 14 13.5 13 1.3:1 1.4:1 1.3:1 1.1:1 43 44 42 42 4.7 5.5 6.0 6.0 90 115 575 100 122 610 Max. Symbol Parameters: Test Conditions: Z0 = 50 Ohms, Ta = 25C Output Power at 1dB Compression P 1dB dB m 24 S 21 Small signal gain dB 12.5 15 S11 Input VSWR - OIP3 Output Third Order Intercept Point (Pout/Tone = +11 dBm, Tone spacing = 1 MHz) dB m 39 NF Noise Figure dB ID PDISS Rth, j-l Device Current Operating Dissipated Power Thermal Resistance (junction - lead) mA mW C/W The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2002 Sirenza Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102231 Rev C 1 SXA-389 Note: Tuned for Output IP3 1/4 W GaAs HBT Amplifier 850 MHz Application Circuit Data, VCC= 5V, ID= 120mA P1dB vs. Frequency 30 28 26 24 22 20 0 .8 0 .8 5 GHz dB Gain vs. Frequency 25 -40C 25C 85C 23 21 19 25C 85C -4 0 C 0 .9 0 .9 5 dBm 17 15 0 .8 0 .8 5 GHz 0 .9 0 .9 5 Input/Output Return Loss, Isolation vs. Frequency, T=25C 0 -5 -1 0 dB 50 47 dBm Third Order Intercept vs. Frequency (POUT per tone = 11dBm) -40C 25C 85C 44 41 38 35 -1 5 -2 0 -2 5 -3 0 0 .8 0 .8 5 GHz S 11 S 12 S 22 0 .9 0 .9 5 0 .8 0 .8 5 GHz 0 .9 0 .9 5 50 47 44 dBm Third Order Intercept vs. Tone Power Frequency = 850 MHz Adjacent Channel Power (dBc) -40C 25C 85C -40 -45 -50 -55 -60 -65 -70 -75 10 880 MHz Adjacent Channel Power vs. Channel Output Power 41 38 35 0 3 6 9 12 15 25C 85C -40C 12 14 16 18 20 POUT per tone (dBm) Channel Output Power (dBm) IS-95, 9 Channels Forward 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102231 Rev C 2 SXA-389 Note: Tuned for Output IP3 1/4 W GaAs HBT Amplifier 1960 MHz Application Circuit Data, VCC= 5V, ID= 120mA P1dB vs. Frequency 30 28 26 24 22 20 1.93 25C 85C -40C 1.94 1.95 1.96 GHz dB Gain vs. Frequency 20 25C 18 16 14 12 10 1.93 85C -40C dBm 1.97 1.98 1.99 1.94 1.95 1.96 GHz 1.97 1.98 1.99 Input/Output Return Loss, Isolation vs. Frequency, T=25C 0 S 11 -5 -1 0 dB 50 S 12 S 22 dBm Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 47 44 41 -40C 38 35 1.93 25C 85C -1 5 -2 0 -2 5 -3 0 1 .9 3 1 .9 4 1 .9 5 1 .9 6 GHz 1 .9 7 1 .9 8 1 .9 9 1.94 1.95 1.96 GHz 1.97 1.98 1.99 Third Order Intercept vs. Tone Power Frequency = 1.96 GHz 50 Adjacent Channel Power (dBc) 1960 MHz Adjacent Channel Power vs. Channel Output Power -40 -45 -50 -55 -60 -65 -70 -75 25C 85C -40C 10 12 14 16 18 20 47 44 41 -40C 38 35 0 3 6 9 12 15 25C 85C dBm POUT per tone (dBm) Channel Output Power (dBm) IS-95, 9 Channels Forward 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102231 Rev C 3 SXA-389 Note: Tuned for Output IP3 1/4 W GaAs HBT Amplifier 2140 MHz Application Circuit Data, VCC= 5V, ID= 120mA Gain vs. Frequency 20 25C 18 16 dB P1dB vs. Frequency 30 28 26 24 25C 22 20 2.11 85C -40C 2.12 2.13 2.14 GHz 85C -40C dBm 14 12 10 2.11 2.15 2.16 2.17 2.12 2.13 2.14 GHz 2.15 2.16 2.17 Input/Output Return Loss, Isolation vs. Frequency, T=25C 0 -5 -10 -15 -20 -25 -30 2.11 S 11 S 12 S 22 dBm dB Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 50 47 44 41 38 35 2.11 -40C 25C 85C 2.12 2.13 2.14 GHz 2.15 2.16 2.17 2.12 2.13 2.14 GHz 2.15 2.16 2.17 Third Order Intercept vs. Tone Power Frequency = 2.14 GHz 50 -40C 47 44 41 38 35 0 3 6 9 12 15 POUT per tone (dBm) Adjacent Channel Power (dBc) 2140 MHz Adjacent Channel Power vs. Channel Output Power -40 -45 -50 -55 -60 -65 -70 10 11 12 13 14 15 16 17 Channel Output Power (dBm) W-CDMA, 64 DPCH + Overhead 25C 85C dBm 25C 85C -40C 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102231 Rev C 4 SXA-389 Note: Tuned for Output IP3 1/4 W GaAs HBT Amplifier 2450 MHz Application Circuit Data, VCC= 5V, ID= 120mA Gain vs. Frequency 20 18 16 dB P1dB vs. Frequency 30 28 26 24 25C 22 20 2.4 2.42 2.44 GHz 25C 85C -40C dBm 14 85C -40C 2.46 2.48 2.5 12 10 2.4 2.42 2.44 GHz 2.46 2.48 2.5 Input/Output Return Loss, Isolation vs. Frequency, T=25C 0 -5 -10 -15 dB dBm Third Order Intercept vs. Frequency (POUT per tone = 11dBm) 50 47 -40C 25C 85C -20 -25 -30 -35 -40 2.4 2.42 2.44 GHz S 11 S 12 S 22 44 41 38 35 2.46 2.48 2.5 2.4 2.42 2.44 GHz 2.46 2.48 2.5 Third Order Intercept vs. Tone Power Frequency = 2.45 GHz 50 47 44 41 38 35 0 3 6 9 12 15 POUT per tone (dBm) -40C 25C 85C dBm 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102231 Rev C 5 SXA-389 Application Schematic V cc 1/4 W GaAs HBT Amplifier C1 C2 C3 L1 C4 C7 Z = 50 , E L 1 Z = 5 0 , E L2 Z = 50 , E L 3 R F in RFout L2 C5 C6 Ref. Des. Vendor Series Matsuo 267M3502104K Rohm MCH18 Rohm MCH18 Rohm MCH18 Rohm MCH18 Rohm MCH18 850 MHz 0.1uF 10% 1000pF 5% 47pF 5% 47pF 5% 3.9pF 0.25pF 3.9pF 0.25pF 1960 MHz 0.1uF 10% 1000pF 5% 22pF 5% 22pF 5% 0.5pF 0.25pF 2140 MHz 0.1uF 10% 1000pF 5% 22pF 5% 22pF 5% 0.5pF 0.25pF 2450 MHz 0.1uF 10% 1000pF 5% 22pF 5% 1.2pF 0.25pF 0.5pF 0.25pF Ref. Des. Vendor Series 850 MHz 2 1960 MHz 1 18nH 5% thru 28.7 2140 MHz 1 18nH 5% thru 31.4 2450 MHz 1 15nH 5% thru 35.9 C1 C2 C 3, C 7 C4 C5 C6 C6 Position L1 L2 E L1 E L2 E L3 Toko LL1608-FS Toko LL1608-FS 33nH 5% 1.2nH 0.3nH 9.7 5.6 13.2 Evaluation Board Layout RFin C1 C2 C3 L1 + RFout C4 L2 C7 C5 12 C6 SIRENZA MICRODEVICES SOT-89 Eval Board ECB-101499 Rev B 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102231 Rev C 6 Absolute Maximum Ratings Parameter Max. Supply Current (ID) Max. Device Voltage (VCC) Max. Power Dissipation Max. RF Input Power Max. Junction Temp. (TJ) Operating Lead Temp. (TL) Max. Storage Temp. Absolute Limit 240 mA 6.0 V 1500 mW 100 mW +165 C -40 to +85 C +150 C Pin # 1 2 3 4 SXA-389 1/4 W GaAs HBT Amplifier Part Number Ordering Information Part Number Devices Per Reel Reel Siz e SXA-389 1000 7" Part Symbolization The part will be symbolized with a "XA3" designator on the top surface of the package. Pin Description Function B a se GND & Emitter Collector B a se P i n Connection to ground. Use via holes to reduce lead inductance. Place vias as close to ground leads as possible. Collector Pin Description Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: IDVCC (max) < (TJ - TL)/Rth,j-l ESD: Class 1B (Passes 500V ESD Pulse) Appropriate precautions in handling, packaging and testing devices must be observed. GND & Emitter Same as Pin 2 Package Dimensions .059 (See SMDI MPO-100136 for tolerances) .161 .096 .041 .008 3 .016REF 2 .118 .059 1 .029 .019 .059 Ref .118REF .045 Min .177 4 XA3 .009 .065 Min .016 .085 Min MARKING AREA DOT DENOTES PIN 1 .041REF .161 REF TOP VIEW 5 .015TYP(4X) PCB Pad Layout Recommended Mounting Configuration for Optimum RF and Thermal Performance Ground Plane Plated Thru Holes (0.020" DIA) SXA-389 Machine Screws (Optional) DIMENSIONS ARE IN INCHES [MM] 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com EDS-102231 Rev C 7 |
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