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| AP9972GI Pb Free Plating Product Advanced Power Electronics Corp. Low Gate Charge Single Drive Requirement Lower On-resistance G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 18m 35A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is universally preferred for all commercial-industrial through hole applications. GD S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 60 25 35 22 120 31.3 0.25 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 4 62 Units /W /W Data and specifications subject to change without notice 200105051 AP9972GI Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. 60 1 - Typ. 0.06 40 35 9.5 20 12 37 47 59 280 230 1.6 Max. Units 18 22 3 10 25 100 56 2.4 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS=10V, ID=23A VGS=4.5V, ID=12A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=250uA VDS=10V, ID=23A VDS=60V, VGS=0V VDS=48V ,VGS=0V VGS=25V ID=23A VDS=48V VGS=4.5V VDS=30V ID=35A RG=3.3,VGS=10V RD=0.86 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 3160 5060 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=23A, VGS=0V IS=23A, VGS=0V, dI/dt=100A/s Min. - Typ. 36 45 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25 , IAS=30A. AP9972GI 120 120 10V 7.0V T C = 150 C ID , Drain Current (A) ID , Drain Current (A) 90 10V 7.0V o 90 T C =25 C o 5.0V 60 5.0V 60 4.5V 4.5V 30 30 V G =3.0V V G =3.0V 0 0 0 2 4 6 8 0 2 4 6 8 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 20 1.6 I D = 12 A T C =25 o C 18 1.4 I D =23A V G =10V Normalized RDS(ON) 2 4 6 8 10 RDS(ON) (m ) 1.2 1.0 16 0.8 14 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.7 20 15 Normalized VGS(th) (V) T j =150 o C IS(A) 10 T j =25 o C 1.2 0.7 5 0 0 0.2 0.4 0.6 0.8 1 1.2 0.2 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP9972GI 12 f=1.0MHz 10000 I D = 23 A VGS , Gate to Source Voltage (V) 10 8 V DS =48V V DS =38V V DS =30V C (pF) 1000 C iss 6 4 2 C oss C rss 0 0 20 40 60 80 100 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (R thjc) Duty factor=0.5 100 0.2 ID (A) 100us 10 0.1 0.1 0.05 1 T C =25 C Single Pulse o 1ms 10ms 100ms DC PDM 0.02 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + TC 0.1 0.1 1 10 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 100 V DS =5V 80 VG QG 4.5V T j =25 o C ID , Drain Current (A) 60 T j =150 o C QGS 40 QGD 20 Charge 0 Q 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform |
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