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| Infrared Emitting Diodes(GaAlAs) K DNH OESI CL-209 DIMENSIONS The CL-209 is a high-power GaAlAs IRED mounted in a TO-46 metal stem with clear epoxy encapsulation, providing wide beam angle. (Unit : mm) FEATURES UHigh output power UWide beam angle 5deg. 8 ae UTO-46 epoxy potting type APPLICATIONS UOptical switches UTransportation sensors MAXIMUM RATINGS Item Reverse voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp. (Ta=2...) 5 Symbol VR F I PD F IP Topr. Tstg. Tsol. Rating 5 80 130 0.8 0 80 2 0 80 2 240 Unit V mA mW A ... ... ... *1. pulse width tw Z100 *I sec.period 10msec. T= *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current *3 Peak emission wavelength Spectral bandwidth Radiant intensity Half angle (Ta=2...) 5 Symbol VF R I *Ip **I PO **E Conditions F= I 20mA VR=5V F= I 50mA F= I 50mA F= I 20mA Min. Typ. 1.3 880 70 30 ae 5 8 Max. 1.6 10 Unit. V *I A nm nm mV deg. *3. Measured by tester of KODENSHI CORP. - 1- Infrared Emitting Diodes(GaAlAs) CL-209 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current Vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- |
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