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| PROCESS CPS110 Silicon Controlled Rectifier 12 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization Glass Passivated Mesa 110 x 110 MILS 8.7 MILS 80 x 40 MILS 31 x 31 MILS Al - 45,000A Al/Mo/Ni/Ag - 32,000A GEOMETRY GROSS DIER PER 4 INCH WAFER 876 PRINCIPAL DEVICE TYPES CS220-12M Series CSDD-12M Series 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (4- January 2006) |
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