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  Datasheet File OCR Text:
 MRF646
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF646 is designed for 12.5 UHF large signal applications up to 512 MHz.
PACKAGE STYLE .500 6L FLG
C A
3
D
1
2x O N FU LL R
FEATURES:
* Internal Input Matching Network * PG = 4.8 dB at 45 W/470 MHz * OmnigoldTM Metalization System * Common Emitter, 12.5 V operation
D IM
2
B G .725/18,42 F E
4
K H M IN IM U M
inches / m m
M L
J
I
M AX IM U M
inches / m m
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG JC 9.0 A 36 V 16 V 4.0 V 117 W @ TC = 25C -65 C to +200 C -65 C to +150 C 1.5 C/W
A B C D E F G H I J K L M N
.150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05
.160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18
.980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .135 / 3.43
1 = COLLECTOR
2 = BASE
3&4 = EMITTER
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICES hFE Cob PG C IC = 20 mA IC = 20 mA IE = 5.0 mA VCE = 15 V
TC = 25 C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
16 36 4.0 10
UNITS
V V V mA --pF dB %
VCE = 5.0 V VCB = 12.5 V VCE = 12.5 V
IC = 4.0 A f = 1.0 MHz POUT = 45 W f = 470 MHz
20 90 4.8 55 5.4 60
150 125
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1


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