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| SI4408DY New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0045 @ VGS = 10 V 0.0068 @ VGS = 4.5 V ID (A) 21 17 D D D D D TrenchFETr Power MOSFET PWM Optimized for Fast Switching Low Switching Losses Low Gate Drive Losses 100% RG Tested APPLICATIONS D Self-Driven Synchronous Rectification D SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S N-Channel MOSFET G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 20 "20 21 Steady State Unit V 14 11 60 A 1.3 1.6 1 -55 to 150 W _C ID IDM IS PD TJ, Tstg 17 2.9 3.5 2.2 THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 70687 S-03662--Rev. B, 14-Apr-03 www.vishay.com t v 10 sec Steady State Steady State RthJA RthJF Symbol Typical 29 67 13 Maximum 35 80 16 Unit _C/W 1 SI4408DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 21 A VGS = 4.5 V, ID = 17 A VDS = 6 V, ID = 21 A IS = 2.9 A, VGS = 0 V 30 0.0035 0.0054 60 0.75 1.1 0.0045 0.0068 S V 1.0 "100 1 5 V nA mA A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd RG td(on) tr td(off) tf trr IF = 2.9 A, di/dt = 100 A/ms VDD = 10 V, RL = 10 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W 0.5 VDS = 10 V, VGS = 4.5 V, ID = 21 A 21 8.9 6.4 1.40 42 42 60 26 55 2.4 65 65 90 40 80 ns ns W 32 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 4 V 40 I D - Drain Current (A) I D - Drain Current (A) 50 60 Transfer Characteristics 40 30 30 20 3V 10 20 TC = 125_C 25_C -55_C 10 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 70687 S-03662--Rev. B, 14-Apr-03 SI4408DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.010 4500 Vishay Siliconix Capacitance r DS(on) - On-Resistance ( W ) 0.008 VGS = 4.5 V 0.006 C - Capacitance (pF) 3600 Ciss 2700 0.004 VGS = 10 V 1800 Coss 900 Crss 0.002 0.000 0 10 20 30 40 50 60 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 21 A 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 21 A 4 r DS(on) - On-Resistance ( W) (Normalized) 12 18 24 30 5 1.6 1.4 3 1.2 2 1.0 1 0.8 0 0 6 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.020 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 TJ = 25_C r DS(on) - On-Resistance ( W ) 0.016 I S - Source Current (A) 0.012 ID = 21 A 0.008 0.004 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.000 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Document Number: 70687 S-03662--Rev. B, 14-Apr-03 www.vishay.com 3 SI4408DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 60 50 ID = 250 mA V GS(th) Variance (V) 0.0 Power (W) 40 Single Pulse Power 0.3 -0.3 30 -0.6 20 -0.9 10 -1.2 -50 -25 0 25 50 75 100 125 150 0 10 - 2 10 - 1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 67_C/W Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 70687 S-03662--Rev. B, 14-Apr-03 |
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