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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV58 UHF linear push-pull power transistor
Product specification September 1991
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
FEATURES * High power gain * Double stage internal input matching for high input impedance * Diffused emitter-ballasting resistors enhances ruggedness * Gold metallization for high reliability. DESCRIPTION The BLV58 is a common emitter epitaxial npn silicon planar transistor designed for high linearity class-A operation in UHF (bands 4 and 5) TV transmitters and transposers. The device is incorporated in a push-pull SOT289 flange envelope with a ceramic cap, which is utilized with the emitters connected to the flange. PINNING - SOT289 PIN 1 2 3 4 5 DESCRIPTION collector 1 collector 2 base 1 base 2 emitter WARNING Product and environmental safety - toxic materials Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION c.w. class-A Note fvision (MHz) 860 VCE (V) 25 ICQ (A) 2 x 1.6 Po sync (W) 25 Gp (dB) >10
BLV58
dim (dB) (note 1) < -45
1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB); zero dB corresponds to peak sync level. PIN CONFIGURATION
c1
k, halfpage
1
2
handbook, halfpage
b1 5 3 Top view 4
MBC043 MBA970
e b2
c2
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
September 1991
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
LIMITING VALUES (per transistor section unless otherwise specified) In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC, IC(AV) ICM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current total power dissipation CONDITIONS open emitter open base open collector DC or average value peak value; f > 1 MHz DC operation; Tmb = 70 C (note 1) - - - - - - MIN.
BLV58
MAX. 50 27 3.5 4 8 87
UNIT V V V A A W
Tstg Tj Note
storage temperature range junction operating temperature
-65 -
150 200
C C
1. Total device, both sections equally loaded.
MRA354
MRA355
handbook,10 halfpage
200 handbook, halfpage Th = 25 o C Tmb = 70 C 120 I 80 II
o
IC (A)
P tot (W) 160
40
1 1 10 VCE (V) 50
0 0
20
40
60
80
100
120
o Th ( C)
Total device, both sections equally loaded.
(I) Continuous DC operation. (II) Short time operation during mismatch. Total device, both sections equally loaded.
Fig.2 DC SOAR.
Fig.3 Power derating curve.
September 1991
3
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
THERMAL RESISTANCE SYMBOL Rth j-mb(DC) PARAMETER from junction to mounting base CONDITIONS Pdis = 87 W; Tmb = 70 C (note 1) note 1 MAX. 1.5
BLV58
UNIT K/W
Rth mb-h Note
from mounting base to heatsink
0.2
K/W
1. Total device, both sections equally loaded. CHARACTERISTICS Values apply to either transistor section; Tj = 25 C. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain collector capacitance CONDITIONS open emitter; IC = 20 mA open base; IC = 50 mA open collector; IE = 10 mA VBE = 0; VCE = 27 V VCE = 25 V; IC = 1.6 A VCB = 25 V; IE = Ie = 0; f = 1 MHz MIN. 50 27 3.5 - 30 - TYP. - - - - - 36 MAX. UNIT - - - 10 - 45 pF V V V mA
September 1991
4
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
MRA350
MRA346
120 handbook, halfpage h FE
handbook, halfpage
Cc (pF)
120
80 80
40 40
0
0 0 1 2 3 IC (A) 0 10 20 30 VCB (V) 40
VCE = 25 V.
IE = ie = 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector current, typical values.
Fig.5
Collector capacitance as a function of collector-base voltage, typical values.
September 1991
5
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter push-pull test circuit; Rth mb-h = 0.2 K/W. MODE OF OPERATION c.w. class-A Notes fvision (MHz) 860 VCE (V) 25 ICQ (A) 2 x 1.6 Po sync (W) 25 GP (dB) > 10 typ. 11.5 dim (dB) (note 1) < -45 typ. -47
BLV58
dcm (%) (note 2) < 20
1. Three-tone test method: vision carrier -8 dB (860 MHz), sound carrier -7 dB (865.5 MHz), sideband signal -16 dB (861 MHz); zero dB corresponds to peak sync level. 2. Two-tone test method: vision carrier 0 dB (860 MHz), sound carrier -7 dB (865.5 MHz); zero dB corresponds to peak sync level. Cross-modulation distortion (dcm) is the voltage variation (%) of the sound carrier when the vision carrier is switched from 0 dB to -20 dB.
MRA351
-40 handbook, halfpage d im (dB) -50 Th = 70 C
o
MRA349
-40 handbook, halfpage d im (dB) -42
-44 T = 25 C h -46
o
Th = 70 o C
-60 -48
Th = 25o C
-50 -70 0 10 20 30 P sync (W) o
1.6
2.4
3.2
IC (A)
4
Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test (-8 dB, -16 dB, -7 dB); ICQ = 2 x 1.6 A.
Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test (-8 dB, -16 dB, -7 dB); Po sync = 25 W.
Fig.6
Intermodulation distortion as a function of output power.
Fig.7
Intermodulation distortion as a function of collector current.
Ruggedness in Class-A operation The BLV58 is capable of withstanding a full load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions:
VCE = 25 V, f = 860 MHz, Th = 25 C, Rth mb-h = 0.2 K/W, ICQ = 2 x 1.6 A, and rated output power.
September 1991
6
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
MRA356
MRA348
handbook, halfpage
P sync o
handbook, halfpage
13
(W) 30 Th = 25o C
GP (dB) 11
Th = 25 C
o
o
Tmb = 70 C
20
Th = 70 C
o
9 10
0 0 1 2 Pi sync (W) 3
7 0 10 20 30 P sync (W) o
Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test (-8 dB, -16 dB, -7 dB); ICQ = 2 x 1.6 A.
Class-A operation; VCE = 25 V; f = 860 MHz; 3-tone test (-8 dB, -16 dB, -7 dB); ICQ = 2 x 1.6 A.
Fig.8 Output power as a function of input power.
Fig.9
Gain as a function of output power, typical values.
September 1991
7
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
V CC C15 C16
V C7
L12 BB
R1
C8 C9 C10 C20 L6 L1 50 input L2 C3 L3 C2 L5 L7 C22 C11 C13 C12 C14 VBB L15 C24 L9 T.U.T. L11 C4 C5 C6 C29 C1 L4 L8 BLV58 L13 L10 C18
C17
C19
C21 L16 L18 C34 L20 L21 C32 C33 L22 L17 C23 L19 C35
C31 C30
50 output
C25
C26
R2
handbook, full pagewidth
C28 C27 VCC
MBC048
Fig.10 Class-A test circuit at f = 860 MHz.
September 1991
8
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
List of components (see test circuit) COMPONENT C1, C2, C34, C35 C3 C4, C6 C5 C7, C12, C17, C26 C8, C14, C19, C25 C9, C11, C16, C20, C22, C28 C10, C13, C15, C21, C23, C27 C18, C24 C29 C30 C31, C33 C32 L1, L3, L20, L22 L2, L21 L4, L5 L6, L7 L8, L9 L10, L11 L12, L15 L13, L14 L16, L17 L18, L19 R1, R2 Notes 1. American Technical Ceramics type 100B or capacitor of the same quality. DESCRIPTION multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor multilayer ceramic chip capacitor 63 V electrolytic capacitor multilayer ceramic chip capacitor (note 1) 63 V electrolytic capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) film dielectric trimmer stripline (note 2) semi-rigid cable (note 3) stripline (note 2) RF choke stripline (note 2) stripline (note 2) grade 3B RF choke 1 turn 1.5 mm copper wire stripline (note 2) stripline (note 2) 1 W metal film resistor 14 nH 38 38 10 int. dia 7 mm; leads 2 x 6 mm 7 mm x 3.5 mm 18 mm x 3.5 mm VALUE 15 pF 3.9 pF 5.5 pF 7.5 pF 10 nF 100 nF 10 F 330 pF 1 F 12 pF 5.6 pF 3.5 pF 35 50 38 470 nH 38 38 7.5 mm x 3.5 mm 4.5 mm x 3.5 mm 39 mm x 4 mm ext. dia. 3.6 mm; length 39 mm 19 mm x 3.5 mm DIMENSIONS
BLV58
CATALOGUE NO.
2222 809 09005
2222 852 47103 2222 852 47104
2222 809 05001
multilayer ceramic chip capacitor (note 1) 2.7 pF
4312 020 36642
2. The striplines are on a double copper-clad printed circuit board, with PTFE microfibre-glass dielectric (r = 2.2), thickness 132 inch, thickness of copper sheet 2 x 35 m. 3. Cables L2 and L21 are soldered to striplines L1 and L20, respectively.
September 1991
9
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
handbook, full pagewidth
170 mm
rivet (2x)
80 mm
copper strap (6x)
MBC046
handbook, full pagewidth
C9
C7 C8 C10 C17 C19 C21
C18
C20 C16 L12 R1 L13 C30 L16 C31 C15
L1
C1 L6 L4 C3 C5 C4 C6 L5 L7 C26 C25 C23 C11 C14 C13 C12 C22 L8 L10 C29 L9 L11
L20
C34 L18 C32 C33 C35
L19 L17 L14 R2 L15
C2
L2
3 +L
L2 L221 +
C27 C28
C24
MBC047
The components are mounted on one side of a copper clad PTFE microfibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by hollow rivets and copper straps.
Fig.11 Component layout for 860 MHz class-A test circuit.
September 1991
10
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV58
handbook, halfpage
6
MRA352
handbook, halfpage
6
MRA353
Zi () 4 xi
r
ZL () i 4 RL
2 2 XL
0 0 400 -1 400
500
600
700
800 900 f (MHz)
500
600
700
800 900 f (MHz)
Class-A operation; VCE = 25 V; ICQ = 1.6 A (per section); PL = 25 W (total device); Th = 25 C.
Class-A operation; VCE = 25 V; ICQ = 1.6 A (per section); PL = 25 W (total device); Th = 25 C.
Fig.12 Input impedance per section (series components) as a function of frequency, typical values.
Fig.13 Load impedance per section (series components) as a function of frequency, typical values.
MRA347
handbook, 16 halfpage
GP (dB)
14
handbook, halfpage
12
Zi ZL
MBA451
10 400
500
600
700
800 900 f (MHz)
Class-A operation; VCE = 25 V; ICQ = 1.6 A (per section); PL = 25 W (total device); Th = 25 C.
Fig.14 Definition of transistor impedance.
Fig.15 Power gain as a function of frequency, typical values.
September 1991
11
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLV58
SOT289A
D
A F
5
U1 q H1 w2 M C C
B
c
1
2
H
U2
p
E
w1 M A B
A
3
b e
4
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.65 3.92 0.183 0.154 b 3.33 3.07 c 0.10 0.05 D 13.10 12.90 0.516 0.508 E 11.53 11.33 e 4.60 F 1.65 1.40 H 19.81 19.05 H1 4.85 4.34 p 3.43 3.17 Q 2.31 2.06 q 21.44 U1 28.07 27.81 1.105 1.095 U2 11.81 11.56 0.465 0.455 w1 0.51 0.02 w2 1.02 0.04 w3 0.25 0.01
0.131 0.004 0.121 0.002
0.454 0.181 0.446
0.065 0.780 0.055 0.750
0.191 0.135 0.171 0.125
0.091 0.844 0.081
OUTLINE VERSION SOT289A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1991
12
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV58
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1991
13

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