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| Datasheet File OCR Text: |
| PROCESS Power Transistor CP211 Central TM NPN - Amp/Switch Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 1,450 PRINCIPAL DEVICE TYPES 2N3054A CJD41C TIP41C EPITAXIAL BASE 80 x 99 MILS 12.5 MILS 12 x 32 MILS 13 x 48 MILS Al - 30,000A Cr/Ni/Ag 16,000A BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (21-September 2003) Central TM PROCESS CP211 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (21-September 2003) |
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