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Photomicrosensor (Transmissive) EE-SX198 Dimensions Note: All units are in millimeters unless otherwise indicated. 12.20.3 Features * General-purpose model with a 3-mm-wide slot. * PCB mounting type. * High resolution with a 0.5-mm-wide aperture. Absolute Maximum Ratings (Ta = 25C) 50.1 0.50.1 Four, C0.3 Two, C10.3 Optical axis 6.5+0.1 Item Emitter Forward current Pulse forward current Reverse voltage 6.20.5 Symbol IF IFP VR VCEO VECO IC PC Topr Tstg Tsol Rated value 50 mA (see note 1) 1A (see note 2) 4V 30 V --20 mA 100 mW (see note 1) -25C to 85C -30C to 100C 260C (see note 3) 8.50.1 100.2 Detector Four, 0.250.1 Four, 0.50.1 2.50.1 9.20.3 Cross section AA Collector-Emitter voltage Emitter-Collector voltage Collector current Collector dissipation Cross section BB Internal Circuit K C Ambient temperature Operating Storage Soldering temperature A E Terminal No. A K C E Name Anode Cathode Collector Emitter Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25C. 2. The pulse width is 10 ms maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Unless otherwise specified, the tolerances are 0.2 mm. Electrical and Optical Characteristics (Ta = 25C) Item Emitter Forward voltage Reverse current Peak emission wavelength Detector Light current Dark current Leakage current Collector-Emitter saturated voltage Peak spectral sensitivity wavelength Rising time Falling time VF IR Symbol Value 1.2 V typ., 1.4 V max. 0.01 mA typ., 10 mA max. 940 nm typ. 0.5 mA min., 14 mA max. 2 nA typ., 200 nA max. --0.1 V typ., 0.4 V max. 850 nm typ. 4 ms typ. 4 ms typ. IF = 30 mA VR = 4 V IF = 20 mA IF = 20 mA, VCE = 5 V VCE = 20 V, 0 lx --IF = 40 mA, IL = 0.5 mA VCE = 10 V VCC = 5 V, RL = 100 W, IL = 5 mA VCC = 5 V, RL = 100 W, IL = 5 mA Condition lP IL ID ILEAK VCE (sat) lP tr tf 128 EE-SX198 Photomicrosensor (Transmissive) Engineering Data Forward Current vs. Collector Dissipation Temperature Rating Collector dissipation PC (mW) Forward current IF (mA) IF PC Forward Current vs. Forward Voltage Characteristics (Typical) Forward current IF (mA) Light Current vs. Forward Current Characteristics (Typical) Ta = 25C VCE = 10 V Ta = -30C Ta = 25C Ta = 70C Light current IL (mA) Ambient temperature Ta (C) Forward voltage VF (V) Forward current IF (mA) Light Current vs. Collector-Emitter Voltage Characteristics (Typical) Ta = 25C IF = 50 mA IF = 40 mA Relative Light Current vs. Ambient Temperature Characteristics (Typical) Relative light current IL (%) IF = 20 mA VCE = 5 V Dark Current vs. Ambient Temperature Characteristics (Typical) VCE = 10 V 0 lx Light current IL (mA) IF = 30 mA IF = 20 mA IF = 10 mA Collector-Emitter voltage VCE (V) Ambient temperature Ta (C) Dark current ID (nA) Ambient temperature Ta (C) Response Time vs. Load Resistance Characteristics (Typical) Sensing Position Characteristics (Typical) Response Time Measurement Circuit Relative light current IL (%) VCC = 5 V Ta = 25C Response time tr, tf (s) IF = 20 mA VCE = 10 V Ta = 25C (Center of optical axis) Input Output 90 % 10 % Input Output Load resistance RL (k) Distance d (mm) EE-SX198 Photomicrosensor (Transmissive) 129 |
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