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FLL21E135IX
L,S-band High Power GaAs FET
FEATURES
High Voltage Operation (VDS=28V) GaAs FET High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) Broad Frequency Range : 2110 to 2170MHz High Reliability
DESCRIPTION
The FLL21E135IX is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is target for high voltage, low current operation in digitally modulated base station amplifiers. This product is ideally suited for W-CDMA and Multi-carrier PCS base station amplifiers while offering high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATING Item
Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature
Symbol
VDS VGS PT T stg T ch
Condition TC=25 C
(Case Tem perature)
o
Rating 32 -3 175 65 to +175 200
o
Unit
V V W o C o C
-
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 C) Item
DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature
Symbol
VDS IGF IGR T ch
Condition
RG=2 RG=2
Limit <28 <529 >-48 155
Unit
V mA mA o C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C) Item
Pinch-Off Voltage Gate-Source Breakdown Boltage 3rd Order Intermodulation Distortion Power Gain Drain Efficiency Adjacent Channel Leakage Power Ratio Themal Resistance
Note 1 : IM3, ACLR and Gain test conditions as follows
IM3 & Gain : f 0=2.1325GHz, f 1=2.1475GHz W-CDMA(3GPP3.4 12-0) BS-1 64ch non clipping modulation measured over 3.84MHz at f 0-15MHz and f 1+15MHz. ACLR : f 0=2.1325GHz W-CDMA (3GPP3.4 12-00) BS-1 64ch non clipping modulation, measured over 3.84MHz at f 0+/-5MHz
o
Symbol
VP VGSO IM 3 GP D ACLR Rth
Condition
VDS=5V, IDS=226mA IGS=-2.26mA VDS=28V IDS(DC)=1000mA Pout=44.8dBm(Avg.)
Note 1
Limit
Min. -0.1 -5 14.5 Typ. -0.2 -33 15.5 26 -35 0.8 Max. -0.5 -30 1.0
Unit
V V dBc dB %
o
Channel to Case
dBc C/W
ESD
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k )
CLASS III
2000V ~
CASE STYLE : IX
Edition 1.1 June 2004
1
FLL21E135IX
L,S-band High Power GaAs FET
Output Power vs. Frequency VDS=28V, IDS=1000mA
54 52 50 48 46 44 42 40 38 36 34 32 2.08
Output Power & Drain Efficiency vs. Input Power VDS=28V, IDS=1000mA, f=2.14GHz
54 52 50 100 90
Output Power[dBm]
Output Power[dBm]
48 46 44 42 40 38 36 34 24 26 28
70 60 50
d
40 30 20 10 0
2.1
2.12
2.14
2.16
2.18
2.2
Frequency [GHz] Pin=24dBm Pin=36dBm Pin=28dBm Pin=40dBm Pin=32dBm
30
32
34
36
38
40
42
Input Pow er [dBm ]
Two-Carrier IMD(ACLR) vs. Output Power VDS=28V, IDS=1000mA, fo=2.1325, f1=2.1475GHz W-CDMA 3-GPP BS-1 64ch Modulation
Single-Carrier ACLR vs. Output Power VDS=28V, IDS=1000mA, fo=2.1325GHz W-CDMA 3GPP BS-1 64ch Modulation
-25 -30 -35
IMD(dBc)
35
Drain Efficiency(%)
-25 -30
ACLR[dBc]
35 25 20 15 10 5 0 26 28 30 32 34 36 38 40 42 44 46 48 Output Power[dBm]
Drain Efficiency[%]
30 25 20 15 10 5 0 24 26 28 30 32 34 36 38 40 42 44 46 48 Output power(dBm) IM3 IM5 Drain Efficiency
30
-35 -40 -45 -50 -55 -60
-40 -45 -50 -55 -60
+/-5MHz
+/-10MHz
Drain Efficiency
2
Drain Efficiency [%]
P out
80
FLL21E135IX
L,S-band High Power GaAs FET
CWIMD vs. Tone Spacing @VDS=28V, IDS=1000mA, fc=2.14GHz Pout=44.8dBm
-20 -25 -30
IMD[dBc]
-35 -40 -45 -50 -55 -60 0.1 1 10 100 Tw o-Tone Spacing [MHz]
IM3
IM5
3
FLL21E135IX
L,S-band High Power GaAs FET
Board Layout
VGS
C16 C15 C14
C13
C12
C17
C19 C18
R2 C20
VDS
R1 C6
C1
C3
C4C5
C10 L1 C7 C8 C9
C2
C11x5
Circuit Diagram of the Board
C16 C15C14 C13 C12
r=3.5 t=0.8mm C17C18 C20 C19 R2
Z7 Z8 Z1 C1 Z1, Z13 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10,Z11 Z12 Z2 Z3 C3 Z4 R1 C4 C5 Z5 C6 C11x5 Z6 C10
Z9
Z10 Z11
Z12 C2
Z13
L1 C7
C8
C9
9.00mm x 1.78mm Transmission Line 15.3mm x 1.78mm Transmission Line 14.5mm x 1.78mm Transmission Line 4.00mm x 6.00mm Transmission Line 2.00mm x 19.0mm Transmission Line 4.00mm x 25.0mm Transmission Line 23.0mm x 0.5mm Transmission Line 6.00mm x 13.0mm Transmission Line 23.0mm x 1.5mm Transmission Line 3.00mm x 1.78mm Transmission Line 26.8mm x 1.78mm Transmission Line
C1,C2 10pF C3,C5,C6,C9 1.0pF C4,C7 2.0pF C8 0.5pF C10 1.5pF C11 0.1uF C12,C17 20pF C13,C18 100nF C14,C19 1000pF C15,C16 10uF
C20 L1 R1 R2
22uF 3.3nF 2.0ohm 51ohm
Board input size r=3.5 t=0.8mm 50mm x 50mm output size r=3.5 t=0.8mm 50mm x 50mm
4
FLL21E135IX
L,S-band High Power GaAs FET
S-Parameters @VDS=28V, IDS=1000mA, f=1.0 to 3.0 GHz
+50j +25j +10j 2.0GHz 0 50 +100j
S11 S22
+250j
Freq. [GHz]
S11 MAG
ANG
S21 MAG
ANG
S12 MAG
ANG
S22 MAG
ANG
2.0GHz 2.1 - 10j 2.2 2.2 2.1
- 250j
- 25j - 50j
- 100j
+90
S21 S12
2.2
2.1 0.08 0.1
180
5.0 4.0 Scale for S21
Scale for S12
0
2.0 GHz
1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00
0.9744 0.9752 0.9708 0.972 0.971 0.9704 0.9645 0.9551 0.9453 0.9072 0.768 0.8443 0.8433 0.8573 0.8653 0.8734 0.8798 0.8892 0.889 0.8948 0.9036 0.9047 0.9392 0.9523 0.9558 0.9623 0.9609 0.9642 0.9716 0.9716
- 172.9 - 172.1 - 171.1 - 170.6 - 169.9 - 169.3 - 169 - 168.3 - 168.4 - 168.8 - 168.1 - 154.3 - 154.4 - 154.4 - 153.9 - 154.2 - 154 - 154.3 - 154.4 - 154.1 - 154.4 - 153.9 - 154.1 - 153.7 - 153.3 - 152.9 - 152.3 - 151 - 150.9 - 150
0.1231 0.1202 0.1285 0.1399 0.1663 0.2107 0.2931 0.4614 0.7228 1.5261 4.1355 2.5913 2.3576 2.1471 1.9666 1.8015 1.6495 1.5161 1.3868 1.2676 1.1656 1.0698 0.519 0.3389 0.2188 0.1707 0.1227 0.1082 0.0977 0.0769
19.18 19.694 21.086 19.632 20.479 17.23 15.203 2.7031 - 11.03 - 33.93 - 98.92 154.54 148.65 143.12 137.99 133.25 128.59 124.1 120.14 116.57 113.03 109.89 93.307 81.392 73.554 67.904 60.783 63.903 50.797 51.905
0.0009 0.0009 0.0011 0.0007 0.0014 0.0012 0.0014 0.002 0.0019 0.0023 0.0044 0.0079 0.0072 0.0069 0.0068 0.0062 0.006 0.0061 0.0057 0.0055 0.0049 0.0046 0.0026 0.0016 0.0003 0.0007 0.002 0.0026 0.0032 0.0044
118.28 106.99 111.32 110.55 112.61 120.57 132.46 130.35 129.76 90.866 - 121.8 124.86 120.82 110.87 107.11 103.85 100.67 97.466 93.934 85.692 85.248 86.496 64.547 60.732 99.556 - 174.6 - 170.4 - 168.3 - 179.6 - 177
0.9739 0.9682 0.9685 0.964 0.9622 0.9597 0.9495 0.9362 0.9077 0.8355 0.4363 0.6937 0.717 0.7382 0.7538 0.7726 0.7845 0.7953 0.8075 0.8167 0.8283 0.8358 0.8916 0.9169 0.9269 0.9309 0.936 0.9324 0.9288 0.9252
- 173.7 - 173.7 - 173.3 - 173.3 - 173 - 173.1 - 173.9 - 175.2 - 178 176.25 164.03 - 141.3 - 142.2 - 143.1 - 143.9 - 144.6 - 145.3 - 145.9 - 146.3 - 146.9 - 147.1 - 147.6 - 150.6 - 152.6 - 154 - 155 - 156.3 - 157.5 - 158.7 - 160.3
- 90
5
FLL21E135IX
L,S-band High Power GaAs FET
IX Package Outline
9.98
R0.508
5.080
3.302
13.716
5.080 12.7 29.50 34.036
Unit : mm
0.152 1.575
6
FLL21E135IX
L,S-band High Power GaAs FET
For further information please contact :
CAUTION
Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461
Sales Division 1, Kanai-cho, Sakae-ku Yokohama,244-0845,Japan
Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others.
(c) 2004 Eudyna Devices USA Inc. Printed in U.S.A.
TEL +81-45-853-8156 FAX +81-45-853-8170
7

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